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  1. 14Khrebtov A.I., Reznik R.R., Ubyivovk E., Litvin A.P., Skurlov I.D., Parfenov P.S., Kulagina A.S., Danilov V.V., Cirlin G.E. Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality // Semiconductors - 2019, Vol. 53, No. 9, pp. 1258-1261 [IF: 0.602, SJR: 0.287]
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  2. 13Reznik R.R., Kotlyar K.P., Khrebtov A.I., Kryzhanovskaya N.V., Cirlin G.E. InGaN nanostructures of a branched morphology on silicon substrate: MBE synthesis and properties // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012052 [SJR: 0.21]
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  3. 12Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Lysak V.V., Cirlin G.E., Reznik R.R., Khrebtov A.I., Soshnikov I.P., Lahderanta E. Piezoelectric current generation in wurtzite GaAs nanowires // Physica Status Solidi (RRL)- Rapid Research Letters - 2018, Vol. 12, No. 1, pp. 1700358 [IF: 2.578, SJR: 0.786]
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  4. 11Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Samsonenko Y.B., Kukushkin S.A., Kasama T., Akopian N., Leonardo L. Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources // Semiconductors - 2018, Vol. 52, No. 4, pp. 462-464 [IF: 0.602, SJR: 0.287]
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  5. 10Reznik R.R., Cirlin G.E., Shtrom I.V., Khrebtov A.I., Soshnikov I.P., Kryzhanovskaya N.V., Moiseev E.I., Zhukov A.E. Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy // Technical Physics Letters - 2018, Vol. 44, No. 2, pp. 112-114 [IF: 0.771, SJR: 0.338]
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  6. 9Reznik R.R., Kotlyar K.P., Il’Kiv I.V., Khrebtov A.I., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. MBE Growth and Optical Properties of GaN, InN, and A(3)B(5) Nanowires on SiC/Si(111) Hybrid Substrate // Advances in Condensed Matter Physics - 2018, pp. 1040689 [IF: 1.044, SJR: 0.314]
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  7. 8Reznik R.R., Kryzhanovskaya N.V., Zhukov A.E., Khrebtov A.I., Samsonenko Y.B., Morozov S.V., Cirlin G.E. Structural properties of multilayer heterostructure for quantum-cascade lasers grown by MBE growth // Journal of Physics: Conference Series - 2018, Vol. 1124, No. 2, pp. 022005 [SJR: 0.21]
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  8. 7Shtrom I.V., Sibirev N.V., Ubiivovk E.V., Samsonenko Y.B., Khrebtov A.I., Reznik R.R., Bouravleuv A.D., Cirlin G.E. GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases // Semiconductors - 2018, Vol. 52, No. 1, pp. 1-5 [IF: 0.602, SJR: 0.287]
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  9. 6Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Soshnikov I.P., Kukushkin S.A., Leandro L., Kasama T., Akopian N. AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates // Journal of Physics D: Applied Physics - 2017, Vol. 50, No. 48, pp. 484003 [IF: 2.588, SJR: 0.857]
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  10. 5Reznik R.R., Shtrom I.V., Samsonenko Y.B., Khrebtov A.I., Soshnikov I.P., Cirlin G.E. The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate // Journal of Physics: Conference Series - 2017, Vol. 929, No. 1, pp. 012047 [SJR: 0.21]
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  11. 4Bouravleuv A.D., Cirlin G.E., Reznik R.R., Khrebtov A.I., Samsonenko Y.B., Werner P.E., Soshnikov I.P., Savin A.M., Lipsanen H.K. Growth and properties of self-catalyzed (In,Mn)As nanowires // Physica Status Solidi (RRL)- Rapid Research Letters - 2016, Vol. 10, No. 7, pp. 554-557 [IF: 2.578, SJR: 0.786]
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  12. 3Zhukov A.E., Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kaliteevski M.A., Ivanov K.A., Kryzhanovskaya N.V., Maximov M.V., Alferov Z.I. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range // Semiconductors - 2016, Vol. 50, No. 5, pp. 662-666 [IF: 0.602, SJR: 0.287]
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  13. 2Reznik R.R., Kotlyar K., Khrebtov A.I., Samsonenko Y.B., Soshnikov I.P., Dyakonov V., Zadiranov U., Tankelevskaya E., Kudryashov D.A., Shevchuk D.S., Cirlin G.E. Development of methods for orderly growth of nanowires // Journal of Physics: Conference Series - 2015, Vol. 661, No. 1, pp. 012053 [SJR: 0.21]
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  14. 1Bourauleuv A.D., Sibirev N.V., Gilstein E.P., Brunkov P.N., Mukhin I.S., Tchernycheva M., Khrebtov A.I., Samsonenko Y.B., Cirlin G.E. Study of the electrical properties of individual (Ga, Mn)As nanowires // Semiconductors - 2014, Vol. 48, No. 3, pp. 344-349 [IF: 0.602, SJR: 0.287]
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