Person Profile
Publications
- 50Bonchyk O.Y., Savytskyy H.V., Swiatek Z., Morgiel Y., Izhnin I.I., Voitsekhovskii A.V., Korotaev A.G., Mynbaev K.D., Fitsych O.I., Varavin V.S., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V. TEM studies of structural defects in HgTe/HgCdTe quantum wells // Applied Nanoscience - 2020, Vol. 10, No. 8, pp. 2867-2871 [IF: 3.325, SJR: 0.583]
more >> - 49Mikhailov N., Shvets V., Ikusov D., Uzhakov I., Dvoretsky S., Mynbaev K.D., Dluzewski P., Morgiel J., Swiatek Z., Bonchyk O., Izhnin I. Interface Studies in HgTe/HgCdTe Quantum Wells // Physica status solidi (b) - 2020, Vol. 257, No. 5, pp. 1900598 [IF: 1.674, SJR: 0.51]
more >> - 48Andryushchenko D.A., Trapeznikova I.N., Bazhenov N.L., Yagovkina M.A., Mynbaev K.D., Remesnik V.G., Varavin V.S. Strong Disorder in HgCdTe Studied with Optical Methods and X-Ray Diffraction // Journal of Physics: Conference Series - 2019, Vol. 1400, No. 6, pp. 066038 [SJR: 0.21]
more >> - 47Bazhenov N.L., Mynbaev K.D., Semakova A.A., Zegrya G.G. Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies // Semiconductors - 2019, Vol. 53, No. 4, pp. 428-433 [IF: 0.602, SJR: 0.287]
more >> - 46Bonchyk O.Y., Savytskyy H., Swiatek Z., Morgiel Y., Izhnin I.I., Voitsekhovskii A.V., Korotaev A.G., Mynbaev K.D., Fitsych O.I., Varavin V.S., Dvoretsky S.A., Marin D.V., Yakushev M.V. Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study // Applied Nanoscience - 2019, Vol. 9, No. 5, pp. 725-730 [IF: 3.325, SJR: 0.583]
more >> - 45Fedorov I.V., Levin R.V., Nevedomsky V.N., Usikova A.A., Bazhenov N.L., Mynbaev K.D., Pushnyi B.V., Zegrya G.G. IR diode structures based on II-Type InAs/GaSb superlattices grown by MOCVD // Journal of Physics: Conference Series - 2019, Vol. 1199, No. 1, pp. 012016 [SJR: 0.21]
more >> - 44Ivanov-Omskii V.I., Mynbaev K.D., Trapeznikova I.N., Andryushchenko D.A., Bazhenov N.L., Mikhailov N.N., Varavin V.S., Remesnik V.G., Dvoretskii S.A., Yakushev M.V. An Optical Study of Disordering in Cadmium Mercury Telluride Solid Solutions // Technical Physics Letters - 2019, Vol. 45, No. 6, pp. 553-556 [IF: 0.771, SJR: 0.338]
more >> - 43Izhnin I.I., Fitsych O.I., Swiaotek Z., Morgiel Y., Bonchyk O.Y., Savytskyy H.V., Mynbaev K.D., Voitsekhovskii A.V., Korotaev A.G., Yakushev M.V., Marin D.V., Varavin V.S., Dvoretsky S.A. Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride // Opto-electronics Review - 2019, Vol. 27, No. 1, pp. 14-17 [IF: 1.449, SJR: 0.453]
more >> - 42Izhnin I.I., Izhnin A.I., Fitsych O.I., Voitsekhovskii A.V., Gorn D.I., Semakova A.A., Bazhenov N.L., Mynbaev K.D., Zegrya G.G. Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures // Applied Nanoscience - 2019, Vol. 9, No. 5, pp. 617-622 [IF: 3.325, SJR: 0.583]
more >> - 41Izhnin I.I., Mynbaev K.D., Voitsekhovsky A.V., Korotaev A.G., Syvorotka I.I., Fitsych O.I., Varavin V.S., Dvoretsky S.A., Mikhailov N., Remesnik V.G., Yakushev M.V., Swiatek Z., Morgiel J., Bonchyk O.Y., Savytskyy H.V. Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis // Infrared Physics and Technology - 2019, Vol. 98, pp. 230-235 [IF: 1.713, SJR: 0.542]
more >> - 40Izhnin I.I., Syvorotka I.I., Fitsych O.I., Varavin V.S., Dvoretsky S.A., Marin D.V., Mikhailov N.N., Remesnik V.G., Yakushev M.V., Mynbaev K.D., Voitsekhovsky A.V., Korotaev A.G. Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis // Semiconductor Science and Technology - 2019, Vol. 34, No. 3, pp. 035009 [IF: 2.305, SJR: 0.712]
more >> - 39Krasnitckii A.S., Smirnov A.M., Mynbaev K.D., Zhigilei L.V., Gutkin M.Y. Axial misfit stress relaxation in core-shell nanowires with hexagonal core via nucleation of rectangular prismatic dislocation loops // Физика и механика материалов = Materials Physics and Mechanics - 2019, Vol. 42, No. 6, pp. 776-783 [SJR: 0.285]
more >> - 38Semakova A.A., Lipnitskaya S.N., Bazhenov N.L., Kizhaev S.S., Chernyaev A.V., Stoyanov N.D., Mynbaev K.D. Spontaneous and stimulated emission in InAs-based LED heterostructures // Journal of Physics: Conference Series - 2019, Vol. 1400, No. 6, pp. 066044 [SJR: 0.21]
more >> - 37Izhnin I.I., Fitsych E.I., Voitsekhovskii A.V., Korotaev A.G., Mynbaev K.D., Varavin V.S., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V., Bonchyk A.Y., Savytskyy H.V., Swiatek Z. Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films // Russian Physics Journal - 2018, Vol. 60, No. 10, pp. 1752–1757 [IF: 0.644, SJR: 0.317]
more >> - 36Mynbaev K.D., Bazhenov N.L., Dvoretsky S.A., Mikhailov N.N., Varavin V.S., Marin D.V., Yakushev M.V. Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies // Journal of Electronic Materials - 2018, Vol. 47, No. 8, pp. 4731-4736 [IF: 1.579, SJR: 0.422]
more >> - 35Mynbaeva M.G., Shirshnev P.S., Kremleva A.V., Smirnov A.N., Ivanova E.V., Zamoryanskaya M.V., Nikitina I.P., Lavrent'Ev A.A., Mynbaev K.D., Odnoblyudov M.A., Bauman D.A., Lipsanen H., Nikolaev V.I., Bougrov V.E., Romanov A.E. Optical properties of bulk gallium oxide grown from the melt // Reviews on Advanced Materials Science - 2018, Vol. 57, No. 1, pp. 97-103 [IF: 2.5, SJR: 0.361]
more >> - 34Semakova A.A., Bazhenov N.L., Mynbaev K.D. Carrier lifetime in InAs(Ga,Sb,P) heterostructures // Journal of Physics: Conference Series - 2018, Vol. 1038, No. 1, pp. 012097 [SJR: 0.21]
more >> - 33Semakova A.A., Bazhenov N.L., Mynbaev K.D. Luminescence of HgCdTe- and InAsSb-based quantum-well heterostructures // Journal of Physics: Conference Series - 2018, Vol. 1135, No. 1, pp. 012072 [SJR: 0.21]
more >> - 32Voitsekhovskii A.V., Izhnin I.I., Syvorotka I.I., Korotaev A.G., Mynbaev K.D., Varavin V.S., Dvoretsky S.A., Marin D.V., Mikhailov N.N., Remesnik V.G., Yakushev M.V. Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films // Journal of Physics: Conference Series - 2018, Vol. 1115, No. 3, pp. 032063 [SJR: 0.21]
more >> - 31Izhnin I.I., Mynbaev K.D., Voytsekhovskiy A.V., Korotaev A.G., Fitsych O.I., Pociask-Bialy M. Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies // Opto-electronics Review - 2017, Vol. 25, No. 2, pp. 148-170 [IF: 1.449, SJR: 0.453]
more >> - 30Izhnin I.I., Voitsekhovskii A.V., Korotaev A.G., Fitsych O.I., Bonchyk O.Y., Savytskyy H.V., Mynbaev K.D., Varavin V.S., Dvoretsky S.A., Yakushev M.V., Jakiela R., Trzyna M. Properties of arsenic-implanted Hg1-xCdxTe MBE films // EPJ Web of Conferences - 2017, Vol. 133, pp. UNSP 01001 [SJR: 0.184]
more >> - 29Mynbaev K.D., Bazhenov N.L., Semakova A.A., Chernyaev A.V., Kizhaev S.S., Stoyanov N.D., Bougrov V.E., Lipsanen H.K., Salikhov K. Spontaneous and stimulated emission in InAsSb-based LED heterostructures // Infrared Physics and Technology - 2017, Vol. 85, pp. 246-250 [IF: 1.713, SJR: 0.542]
more >> - 28Mynbaev K.D., Bazhenov N.L., Semakova A.A., Mikhailova M.P., Stoyanov N.D., Kizhaev S.S., Molchanov S.S., Astakhova A.P., Chernyaev A.V., Lipsanen H., Bougrov V.E. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K // Semiconductors - 2017, Vol. 51, No. 2, pp. 239-244 [IF: 0.602, SJR: 0.287]
more >> - 27Mynbaev K.D., Shilyaev A.V., Semakova A.A., Bykhanova E.V., Bazhenov N.L. Luminescence of II–VI and III–V nanostructures // Opto-electronics Review - 2017, Vol. 25, No. 3, pp. 209-214 [IF: 1.449, SJR: 0.453]
more >> - 26Semakova A.A., Mynbaev K.D., Bazhenov N.L., Chernyaev A.V., Kizhaev S.S., Stoyanov N.D. Electroluminescence of InAsSb-based mid-infrared LEDs in 4.2–300 K temperature range // Journal of Physics: Conference Series - 2017, Vol. 917, No. 5, pp. 052005 [SJR: 0.21]
more >> - 25Shilyaev A.V., Mynbaev K.D., Bazhenov N.L., Greshnov A.A. Effect of composition fluctuations on radiative recombination in narrow-gap semiconductor solid solutions // Technical Physics - 2017, Vol. 62, No. 3, pp. 441-448 [IF: 0.632, SJR: 0.297]
more >> - 24Timoshkov A.O., Bazhenov N.L., Mynbaev K.D., Varavin V.S., Yakushev M.V., Mikhailov N.N., Dvoretsky S.A. Photoluminescence of Hg0.5Cd0.5Te structures grown with molecular-beam epitaxy // Физика и механика материалов = Materials Physics and Mechanics - 2017, Vol. 32, No. 1, pp. 88-93 [SJR: 0.285]
more >> - 23Mynbaev K.D., Zablotsky S.V., Shilyaev A.V., Bazhenov N.L., Yakushev M.V., Marin D.V., Varavin V.S., Dvoretsky S.A. Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates // Semiconductors - 2016, Vol. 50, No. 2, pp. 208-211 [IF: 0.602, SJR: 0.287]
more >> - 22Mynbaeva M.G., Kremleva A.V., Kirilenko D.A., Sitnikova A.A., Pechnikov A.I., Mynbaev K.D., Nikolaev V.I., Bugrov V.E., Lipsanen H., Romanov A.E. TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern // Journal of Crystal Growth - 2016, Vol. 445, pp. 30-36 [IF: 1.751, SJR: 0.513]
more >> - 21Mynbaeva M.G., Lavrent’Ev A.A., Mynbaev K.D. Formation of graphite/sic structures by the thermal decomposition of silicon carbide // Semiconductors - 2016, Vol. 50, No. 1, pp. 138-142 [IF: 0.602, SJR: 0.287]
more >> - 20Swiatek Z., Yakushev M.V., Izhnin I.I., Ozga P., Mynbaev K.D., Varavin V.S., Marin D.V., Mikhailov N.N., Dvoretsky S.A., Voitsekhovski A.V., Savytskyy H.V., Bonchyk O. Electrical and optical studies of a tellurium-related defect in molecular-beam epitaxy-grown HgCdTe // Physica Status Solidi (c) Current Topics in Solid State Physics - 2016, Vol. 13, No. 7-9, pp. 461–464 [SJR: 0.28]
more >> - 19Yakushev M.V., Mynbaev K.D., Bazhenov N.L., Varavin V.S., Mikhailov N.N., Marin D.V., Dvoretsky S.A., Sidorov Y.G. Acceptor states in HgCdTe films grown by molecular-beam epitaxy on GaAs and Si substrates // Physica Status Solidi (c) Current Topics in Solid State Physics - 2016, Vol. 13, No. 7-9, pp. 469–472 [SJR: 0.28]
more >> - 18Bazhenov N.L., Mynbaev K.D., Zegrya G.G. Temperature dependence of the carrier lifetime in Cd (x) Hg1-x Te narrow-gap solid solutions with consideration for Auger processes // Semiconductors - 2015, Vol. 49, No. 4, pp. 432-436 [IF: 0.602, SJR: 0.287]
more >> - 17Bazhenov N.L., Mynbaev K.D., Zegrya G.G. Temperature dependence of the carrier lifetime in narrow-gap Cd xHg1–xTe solid solutions: Radiative recombination // Semiconductors - 2015, Vol. 49, No. 9, pp. 1170-1175 [IF: 0.602, SJR: 0.287]
more >> - 16Izhnin I., Mynbaev K.D., Voitsekhovsky A.V., Korotaev A.G., Varavin V.S., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V., Bonchyk A.Y., Savytskyy H.V., Fitsych O.I. Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching // Infrared Physics & Technology - 2015, Vol. 73, pp. 158-165 [IF: 1.713, SJR: 0.542]
more >> - 15Izhnin I.I., Mynbaev K.D., Voitsekhovsky A.V., Korotaev A.G., Fitsych O.I., Pociask-Bialy M., Dvoretsky S.A. Background donor concentration in HgCdTe // Opto-electronics Review - 2015, Vol. 23, No. 3, pp. 200-207 [IF: 1.667, SJR: 0.453]
more >> - 14Malyshev A.G., Jumashev N.K., Lukyanov G.N., Mynbaev K.D., Rassadina A.A. Application of a LED–photodiode optocouple for the study of human respiratory function // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012026 [SJR: 0.21]
more >> - 13Mynbaev K.D., Shilyaev A.V., Bazhenov N.L., Izhnin A.I., Izhnin I.I., Mikhailov N.N., Varavin V.S., Dvoretsky S.A. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy // Semiconductors - 2015, Vol. 49, No. 3, pp. 367-372 [IF: 0.602, SJR: 0.287]
more >> - 12Shvaleva M.A., Shulga E., Kink I., Mynbaev K.D., Bougrov V.E., Romanov A.E. Na2SiO3 liquid glass-based phosphor material for white LEDs // Physica Status Solidi (A) Applications and Materials Science - 2015, Vol. 212, No. 12, pp. 2964-2967 [IF: 1.775, SJR: 0.532]
more >> - 11Shvaleva M.A., Tuzova Y.V., Romanov A.E., Aseev V.A., Nikonorov N.V., Mynbaev K.D., Bugrov V.E. Optical and thermal properties of phosphors based on lead-silicate glass for high-power white LEDs // Technical Physics Letters - 2015, Vol. 41, No. 11, pp. 1041-1043 [IF: 0.771, SJR: 0.338]
more >> - 10Zablotsky S.V., Bazhenov N.L., Mynbaev K.D., Yakushev M.V., Marin D.V., Varavin V.S., Dvoretsky S.A. Acceptor states and carrier lifetime in heteroepitaxial HgCdTe-on-Si for mid-infrared photodetectors // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012004 [SJR: 0.21]
more >> - 9Izhnin I.I., Dvoretsky S.A., Mynbaev K.D., Fitsych O.I., Mikhailov N.N., Varavin V.S., Pociask-Bialy M., Voitsekhovskii A.V., Sheregii E. Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic // Journal of Applied Physics - 2014, Vol. 115, No. 16, pp. 163501 [IF: 2.068, SJR: 0.699]
more >> - 8Lipnitskaya S.N., Mynbaev K.D., Nikulina L., Kramnik V., Bougrov V.E., Kovsh A.R., Odnoblyudov M.A., Romanov A.E. Investigation of light extraction from light emitting module chip-on-board // Optical Review - 2014, Vol. 21, No. 5, pp. 655-658 [IF: 0.6, SJR: 0.307]
more >> - 7Mynbaev K.D., Bazhenov N.L., Yakushev M.V., Marin D.V., Varavin V.S., Sidorov Y.G., Dvoretsky S.A. Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p+-n photodiode structure formation // Technical Physics Letters - 2014, Vol. 40, No. 8, pp. 708-711 [IF: 0.771, SJR: 0.338]
more >> - 6Mynbaev K.D., Shilyaev A.V., Bazhenov N.L., Izhnin A.I., Izhnin I.I., Voitsekhovskii A.V., Mikhailov N.N., Varavin V.S., Dvoretsky S.A. Light emission from CdHgTe-based nanostructures // Физика и механика материалов = Materials Physics and Mechanics - 2014, Vol. 21, No. 2, pp. 112-118 [SJR: 0.285]
more >> - 5Mynbaeva M.G., Golovatenko A.A., Pechnikov A.I., Lavrent'Ev A.A., Mynbaev K.D., Nikolaev V.I. Specific Features of the Hydride Vapor-Phase Epitaxy of Nitride Materials on a Silicon Substrate // Semiconductors - 2014, Vol. 48, No. 11, pp. 1535-1538 [IF: 0.602, SJR: 0.287]
more >> - 4Mynbaeva M.G., Lebedev S.P., Lavrent'Ev A.A., Mynbaev K.D., Golovatenko A.A., Lebedev A.A., Nikolaev V.I. On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum // Semiconductors - 2014, Vol. 48, No. 3, pp. 350-353 [IF: 0.602, SJR: 0.287]
more >> - 3Shvaleva M.A., Nikulina L.A., Aseev V.A., Mynbaev K.D., Bougrov V.E., Kovsh A.R., Odnoblyudov M.A., Nikonorov N.V., Romanov A.E. Ce3+: YAG Doped Glass-Ceramics For White Light-Emitting Diode // Optical Review - 2014, Vol. 21, No. 5, pp. 683-686 [IF: 0.6, SJR: 0.307]
more >> - 2Vinogradova K.A., Lipnitskaya S.N., Mynbaev K.D., Bougrov V.E., Kovsh A.R., Odnoblyudov M.A., Nikolaev V.I., Romanov A.E. Оптимизация вывода света из мощных светодиодных сборок "чип на плате", излучающих в ультрафиолетовом диапазоне длин волн [Optimization of light extraction from power led chip-on-board modules emitting in ultraviolet range of spectrum] // Физика и механика материалов = Materials Physics and Mechanics - 2013, Vol. 17, No. 2, pp. 111-120 [SJR: 0.285]
more >> - 1Vinogradova K.A., Nikulina L.A., Braslavskii S.S., Solovieva E.A., Mynbaev K.D., Nikolaev V.I., Romanov A.E., Bugrov V.E. Temperature stability of colored LED elements // Физика и механика материалов = Materials Physics and Mechanics - 2013, Vol. 18, No. 2, pp. 143–147 [SJR: 0.285]