Person Profile
Publications
- 67Gridchin V.O., Kotlyar K.P., Reznik R.R., Dvoretskaya E.A., Parfen’Eva A.V., Mukhin I.S., Cirlin G.E. Selective-Area Growth of GaN Nanowires on patterned SiOx/Si Substrates by Molecular Beam Epitaxy // Technical Physics Letters - 2020, Vol. 46, No. 11, pp. 1080-1083 [IF: 0.771, SJR: 0.338]
more >> - 66Koval O.Y., Fedorov V.V., Bolshakov A.D., Fedina S., Kochetkov F.M., Neplokh V., Sapunov G.A., Dvoretskaya L.N., Kirilenko D.A., Shtrom I.V., Islamova R.M., Cirlin G.E., Tchernycheva M., Serov A.Y., Mukhin I.S. Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane // Nanomaterials - 2020, Vol. 10, No. 11, pp. 2110 [IF: 3.553, SJR: 0.919]
more >> - 65Leandro L., Reznik R.R., Clement J., Repan J., Reynolds M., Ubyivovk E.V., Shtrom I.V., Cirlin G.E., Akopian N. Wurtzite AlGaAs Nanowires // Scientific Reports - 2020, Vol. 10, No. 1, pp. 735 [IF: 4.259, SJR: 1.24]
more >> - 64Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Kirilenko D.A., Ilkiv I.V., Reznik R.R., Cirlin G.E., Berkovits V.L. Control of Conductivity of In(x)G(a1-x)As Nanowires by Applied Tension and Surface States // Nano Letters - 2019, Vol. 19, No. 7, pp. 4463-4469 [IF: 12.712, SJR: 4.853]
more >> - 63Bai M., Huang H., Liu Z., Zhan T., Xia S., Li X., Sibirev N. V. ., Bouravleuv A., Dubrovskii V.G., Cirlin G. InAs/InP core/shell nanowire gas sensor: Effects of InP shell on sensitivity and long-term stability // Applied Surface Science - 2019, Vol. 498, pp. 143756 [IF: 3.387, SJR: 1.295]
more >> - 62Bolshakov A.D., Fedorov V.V., Shugurov K.Y., Mozharov A.M., Sapunov G.A., Shtrom I.V., Mukhin M.S., Uvarov A.V., Cirlin G.E., Mukhin I.S. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si // Nanotechnology - 2019, Vol. 30, No. 39, pp. 395602 [IF: 3.44, SJR: 0.926]
more >> - 61Bolshakov A.D., Fedorov V.V., Sibirev N.V., Fetisova M.V., Moiseev E.I., Kryzhanovskaya N.V., Koval O.Y., Ubyivovk E.V., Mozharov A.M., Cirlin G.E., Mukhin I.S. Growth and Characterization of GaP/GaPAs Nanowire Heterostructures with Controllable Composition // Physica Status Solidi (RRL)- Rapid Research Letters - 2019, Vol. 13, No. 11, pp. 1900350 [IF: 2.578, SJR: 0.786]
more >> - 60Gridchin V., Kotlyar K.P., Vershinin A.V., Kryzhanovskaya N.V., Pirogov E.V., Semenov A.A., Belyavskiy P.Y., Nashchekin A.V., Cirlin G.E., Soshnikov I.P. ZnO thin films synthesis by RF magnetron sputtering deposition // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012054 [SJR: 0.21]
more >> - 59Grigorieva N.R., Shtrom I.V., Grigoriev R.V., Soshnikov I.P., Reznik R.R., Samsonenko Y.B., Sibirev N. V. ., Cirlin G.E. The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires // Technical Physics Letters - 2019, Vol. 45, No. 8, pp. 835-838 [IF: 0.771, SJR: 0.338]
more >> - 58Khrebtov A.I., Reznik R.R., Ubyivovk E., Litvin A.P., Skurlov I.D., Parfenov P.S., Kulagina A.S., Danilov V.V., Cirlin G.E. Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality // Semiconductors - 2019, Vol. 53, No. 9, pp. 1258-1261 [IF: 0.602, SJR: 0.287]
more >> - 57Koryakin A.A. ., Kukushkin S.A., Kotlyar K.P., Ubyivovk E., Reznik R.R., Cirlin G.E. A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires // CrystEngComm - 2019, Vol. 21, No. 32, pp. 4707-4717 [IF: 3.474, SJR: 0.813]
more >> - 56Kotlyar K.P., Vershinin A.V., Reznik R.R., Pavlov S.I., Kudryashov D.A., Zelentsov K.S., Mozharov A.M., Karaborchev A.A., Mukhin I.S., Soshnikov I.P., Cirlin G.E. Photovoltaic properties of InP NWs/p-Si heterostructure // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012060 [SJR: 0.21]
more >> - 55Reznik R.R., Kotlyar K.P., Khrebtov A.I., Kryzhanovskaya N.V., Cirlin G.E. InGaN nanostructures of a branched morphology on silicon substrate: MBE synthesis and properties // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012052 [SJR: 0.21]
more >> - 54Reznik R.R., Kotlyar K.P., Kryzhanovskaya N.V., Morozov S.V., Cirlin G.E. Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate // Technical Physics Letters - 2019, Vol. 45, No. 11, pp. 1111-1113 [IF: 0.771, SJR: 0.338]
more >> - 53Reznik R.R., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Talalaev V.G., Cirlin G.E. The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers // AIP Conference Proceedings - 2019, Vol. 2064, pp. 040004 [SJR: 0.177]
more >> - 52Sharov V.A., Alekseev P.A., Borodin B.R., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. InP/Si Heterostructure for High-Current Hybrid Triboelectric/Photovoltaic Generation // ACS Applied Energy Materials - 2019, Vol. 2, No. 6, pp. 4395-4401 [SJR: 1.833]
more >> - 51Sharov V.A., Alekseev P.A., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. Triboelectric current generation in InP // Journal of Physics: Conference Series - 2019, Vol. 1400, No. 6, pp. 066055 [SJR: 0.21]
more >> - 50 Fedorov V.V., Bolshakov A.D., Kirilenko D.A., Mozharov A.M., Sitnikova A.A., Sapunov G.A., Dvoreckaia L.N., Shtrom I.V., Cirlin G.E., Mukhin I.S. Droplet epitaxy mediated growth of GaN nanostructures on Si (111): via plasma-assisted molecular beam epitaxy // CrystEngComm - 2018, Vol. 20, No. 24, pp. 3370-3380 [IF: 3.474, SJR: 0.813]
more >> - 49Alekseev P.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Smirnov A.N., Kirilenko D.A., Davydov V.Y., Berkovits V.L. Unified mechanism of the surface Fermi level pinning in III-As nanowires // Nanotechnology - 2018, Vol. 29, No. 31, pp. 314003 [IF: 3.44, SJR: 0.926]
more >> - 48Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Berkovits V.L. Electromechanical Switch Based on InxGa1-xAs Nanowires // Semiconductors - 2018, Vol. 52, No. 14, pp. 1833-1835 [IF: 0.602, SJR: 0.287]
more >> - 47Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Lysak V.V., Cirlin G.E., Reznik R.R., Khrebtov A.I., Soshnikov I.P., Lahderanta E. Piezoelectric current generation in wurtzite GaAs nanowires // Physica Status Solidi (RRL)- Rapid Research Letters - 2018, Vol. 12, No. 1, pp. 1700358 [IF: 2.578, SJR: 0.786]
more >> - 46Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Soshnikov I.P., Reznik R.R., Lisak V., Lahderanta E., Cirlin G.E. GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells // Semiconductors - 2018, Vol. 52, No. 5, pp. 609-611 [IF: 0.602, SJR: 0.287]
more >> - 45Bolshakov A.D., Fedorov V.V., Sapunov G.A., Mozharov A.M., Dvoretckaia L.N., Shugurov K.U., Shkoldin V.A., Shtrom I.V., Mukhin M.S., Cirlin G.E., Mukhin I.S. GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties // Journal of Physics: Conference Series - 2018, Vol. 1092, No. 1, pp. 012013 [SJR: 0.21]
more >> - 44Bolshakov A.D., Mozharov A.M., Sapunov G.A., Shtrom I.V., Sibirev N.V., Fedorov V.V., Ubyivovk E.V., Tchernycheva M., Cirlin G.E., Mukhin I.S. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy // Beilstein Journal of Nanotechnology - 2018, Vol. 9, pp. 146-154 [IF: 3.127, SJR: 0.721]
more >> - 43Bourauleuv A.D., Ilkiv I., Reznik R.R., Kotlyar K.P., Soshnikov I., Cirlin G.E., Brunkov P.N., Kirilenko D.A., Bondarenko L.V., Nepomniaschiy A., Gruznev D.V., Zotov A.V., Saranin A.A., Dhaka V., Lipsanen H. New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles // Nanotechnology - 2018, Vol. 29, No. 4, pp. 045602 [IF: 3.44, SJR: 0.926]
more >> - 42Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Samsonenko Y.B., Kukushkin S.A., Kasama T., Akopian N., Leonardo L. Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources // Semiconductors - 2018, Vol. 52, No. 4, pp. 462-464 [IF: 0.602, SJR: 0.287]
more >> - 41Petrov P.V., Kokurin I.A., Ivanov Y.L., Cirlin G.E., Sedov V.E., Averkiev N.S. Fine Structure of Levels and Piezospectroscopy of A+ Centers in GaAs/AlGaAs Quantum Wells // Physics of the Solid State - 2018, Vol. 60, No. 2, pp. 339-346 [IF: 0.86, SJR: 0.346]
more >> - 40Reznik R.R., Cirlin G.E., Shtrom I.V., Khrebtov A.I., Soshnikov I.P., Kryzhanovskaya N.V., Moiseev E.I., Zhukov A.E. Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy // Technical Physics Letters - 2018, Vol. 44, No. 2, pp. 112-114 [IF: 0.771, SJR: 0.338]
more >> - 39Reznik R.R., Kotlyar K.P., Il’Kiv I.V., Khrebtov A.I., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. MBE Growth and Optical Properties of GaN, InN, and A(3)B(5) Nanowires on SiC/Si(111) Hybrid Substrate // Advances in Condensed Matter Physics - 2018, pp. 1040689 [IF: 1.044, SJR: 0.314]
more >> - 38Reznik R.R., Kotlyar K.P., Kukushkin S.A., Osipov A.V., Soshnikov I.P., Nikitina E.V., Cirlin G.E. MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 382
more >> - 37Reznik R.R., Kotlyar K.P., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E. MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates // Semiconductors - 2018, Vol. 52, No. 5, pp. 651-653 [IF: 0.602, SJR: 0.287]
more >> - 36Reznik R.R., Kryzhanovskaya N.V., Zhukov A.E., Khrebtov A.I., Samsonenko Y.B., Morozov S.V., Cirlin G.E. Structural properties of multilayer heterostructure for quantum-cascade lasers grown by MBE growth // Journal of Physics: Conference Series - 2018, Vol. 1124, No. 2, pp. 022005 [SJR: 0.21]
more >> - 35Reznik R.R., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Zeze D., Cirlin G.E. MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate // Journal of Physics: Conference Series - 2018, Vol. 1038, No. 1, pp. 012063 [SJR: 0.21]
more >> - 34Shtrom I.V., Filosofov N.G., Agekian V.F., Smirnov M.B., Serov A.Y., Reznik R.R., Kudryavtsev K.E., Cirlin G.E. Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate // Semiconductors - 2018, Vol. 52, No. 5, pp. 602-604 [IF: 0.602, SJR: 0.287]
more >> - 33Shtrom I.V., Sibirev N.V., Ubiivovk E.V., Samsonenko Y.B., Khrebtov A.I., Reznik R.R., Bouravleuv A.D., Cirlin G.E. GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases // Semiconductors - 2018, Vol. 52, No. 1, pp. 1-5 [IF: 0.602, SJR: 0.287]
more >> - 32Soshnikov I.P., Kotlyar K.P., Bert N.A., Kirilenko D.A., Bouravleuv A.D., Cirlin G.E. The Features of GaAs Nanowire SEM Images // Semiconductors - 2018, Vol. 52, No. 5, pp. 605-608 [IF: 0.602, SJR: 0.287]
more >> - 31Timofeeva M., Lang L., Timpu F., Renaut C., Bouravleuv A., Shtrom I., Cirlin G.E., Grange R. Anapoles in Free-Standing III-V Nanodisks Enhancing Second-Harmonic Generation // Nano Letters - 2018, Vol. 18, No. 6, pp. 3695-3702 [IF: 12.712, SJR: 4.853]
more >> - 30Trukhin V.N., Bouravleuv A.D., Mustafin I.A., Cirlin G.E., Kakko J.P., Lipsanen H. Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires // Semiconductors - 2018, Vol. 52, No. 1, pp. 19-23 [IF: 0.602, SJR: 0.287]
more >> - 29Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Soshnikov I.P., Kukushkin S.A., Leandro L., Kasama T., Akopian N. AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates // Journal of Physics D: Applied Physics - 2017, Vol. 50, No. 48, pp. 484003 [IF: 2.588, SJR: 0.857]
more >> - 28Ilkiv I., Kotlyar K., Amel'Chuk D., Lebedev S.P., Cirlin G.E., Bouravleuv A.D. Thermal penetration of gold nanoparticles into silicon dioxide // Acta Physica Polonica A - 2017, Vol. 132, No. 2, pp. 366-368 [IF: 0.469, SJR: 0.217]
more >> - 27Mozharov A.M., Komissarenko F.E., Bolshakov A.D., Fedorov V.V., Sapunov G.A., Cirlin G.E., Mukhin I.S. Modeling the semiconductor devices with negative differential resistance based on nitride nanowires // Journal of Physics: Conference Series - 2017, Vol. 917, No. 8, pp. 082017 [SJR: 0.21]
more >> - 26Reznik R.R., Kotlyar K.P., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E. MBE Growth of Ultrathin III–V Nanowires on a Highly Mismatched SiC/Si(111) Substrate // Semiconductors - 2017, Vol. 51, No. 11, pp. 1472–1476 [IF: 0.602, SJR: 0.287]
more >> - 25Reznik R.R., Kotlyar K.P., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate // Journal of Physics: Conference Series - 2017, Vol. 917, No. 3, pp. 032014 [SJR: 0.21]
more >> - 24Reznik R.R., Kryzhanovskaya N.V., Zubov F.I., Zhukov A.E., Khabibullin R.A., Morozov S.V., Cirlin G.E. MBE growth, structural and optical properties of multilayer heterostructures for quantum-cascade lasers // Journal of Physics: Conference Series - 2017, Vol. 917, No. 5, pp. 052012 [SJR: 0.21]
more >> - 23Reznik R.R., Shtrom I.V., Samsonenko Y.B., Khrebtov A.I., Soshnikov I.P., Cirlin G.E. The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate // Journal of Physics: Conference Series - 2017, Vol. 929, No. 1, pp. 012047 [SJR: 0.21]
more >> - 22Vasiliev A.A., Mozharov A.M., Komissarenko F.E., Cirlin G.E., Bouravlev D.A., Mukhin I.S. Researching the electrical properties of single A3B5 nanowires // Journal of Physics: Conference Series - 2017, Vol. 917, No. 3, pp. 032042 [SJR: 0.21]
more >> - 21Bolshakov A.D., Sapunov G.A., Mozharov A.M., Cirlin G.E., Shtrom I.V., Mukhin I.S. Synthesis of GaN nanowires on Si (111) substrates by molecular beam epitaxy // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012044 [SJR: 0.21]
more >> - 20Bouravleuv A.D., Cirlin G.E., Reznik R.R., Khrebtov A.I., Samsonenko Y.B., Werner P.E., Soshnikov I.P., Savin A.M., Lipsanen H.K. Growth and properties of self-catalyzed (In,Mn)As nanowires // Physica Status Solidi (RRL)- Rapid Research Letters - 2016, Vol. 10, No. 7, pp. 554-557 [IF: 2.578, SJR: 0.786]
more >> - 19Cirlin G.E., Buyskhih A.S., Bouravlev A.D., Samsonenko Y.B., Kaliteevski M.A., Gallant A.J., Zeze D.A. . Investigation of non-equilibrium electron-hole plasma in nanowires by THz spectroscopy // Оптика и спектроскопия - 2016, Vol. 120, No. 5, pp. 796-801 [IF: 0.484]
more >> - 18Cirlin G.E., Buyskikh A.S., Bouravleuv A.D., Samsonenko Y.B., Kaliteevski M.A., Gallant A.J., Zeze D.A. Investigation of non-equilibrium electron-hole plasma in nanowires by THz spectroscopy // Optics and spectroscopy - 2016, Vol. 120, No. 5, pp. 751-755 [IF: 0.716, SJR: 0.283]
more >> - 17Gonzalez-Diaz B., Guerrero-Lemus R., Del Canizo C., Garcia-Tabares E., Rey-Stolle I., Granek F., Korte L., Tucci M., Rath J., Singh U.P., Todorov T., Gunawan O., Plaza J.L., Rubio S., Dieguez E., Cirlin G.E., Hoffmann B., Christiansen S., Ramanujam J., Verma A. Inorganic Photovoltaics - Planar and Nanostructured Devices // Progress in Materials Science - 2016, No. 82, pp. 294-404 [IF: 31.14, SJR: 9.172]
more >> - 16Lysak V., Soshnikov I.P., Lahderanta E.E., Cirlin G.E. Piezoelectric effect in GaAs nanowires: experiment and theory // Physica Status Solidi (RRL)- Rapid Research Letters - 2016, Vol. 10, No. 2, pp. 172-175 [IF: 2.578, SJR: 0.786]
more >> - 15Lysak V.V., Soshnikov I.P., Lahderanta E.E., Cirlin G.E. Piezoelectric effect in wurtzite GaAs nanowires: Growth, characterization, and electromechanical 3D modeling // Physica Status Solidi (A) Applications and Materials Science - 2016, Vol. 213, No. 11, pp. 3014-3019 [IF: 1.775, SJR: 0.532]
more >> - 14Mozharov A.M., Bolshakov A.D., Cirlin G.E., Kudryashov D.A., Gudovskikh A., Mukhin I.S., Alferov Z.I. Simulation of photovoltaic efficiency of a tandem solar cell on Si with GaN nanowires as an emitter layer // Journal of Physics: Conference Series - 2016, Vol. 690, No. 1, pp. 012041 [SJR: 0.21]
more >> - 13Mozharov A.M., Komissarenko F.E., Vasiliev A.A., Bolshakov A.D., Moiseev E.I., Mukhin M.S., Cirlin G.E., Mukhin I.S. Study of electrical properties of single GaN nanowires grown by molecular beam epitaxy // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012002 [SJR: 0.21]
more >> - 12Neplokh V., Ali A., Julien F.H., Foldyna M.F., Mukhin I.S., Cirlin G.E., Harmand J.C., Gogneau N., Tchernycheva M. Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates // Materials Science in Semiconductor Processing - 2016, Vol. 55, pp. 72-78 [IF: 2.359, SJR: 0.695]
more >> - 11Reznik R.R., Kotlyar K., Ilkiv I., Soshnikov I., Kukushkin S.A., Osipov A.V., Nikitina E., Cirlin G. MBE Growth and Optical Properties of GaN Nanowires on SiC/Si(111) Hybrid Substrate // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040003 [SJR: 0.177]
more >> - 10Reznik R.R., Kotlyar K.P., Ilkiv I.V., Kukushkin S.A., Osipov A.V., Soshnikov I.P., Nikitina E.V., Cirlin G.E. MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate // International Conference Laser Optics, LO 2016 - 2016, pp. R92
more >> - 9Reznik R.R., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012027 [SJR: 0.21]
more >> - 8Zhukov A.E., Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kaliteevski M.A., Ivanov K.A., Kryzhanovskaya N.V., Maximov M.V., Alferov Z.I. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range // Semiconductors - 2016, Vol. 50, No. 5, pp. 662-666 [IF: 0.602, SJR: 0.287]
more >> - 7Reznik R.R., Kotlyar K., Khrebtov A.I., Samsonenko Y.B., Soshnikov I.P., Dyakonov V., Zadiranov U., Tankelevskaya E., Kudryashov D.A., Shevchuk D.S., Cirlin G.E. Development of methods for orderly growth of nanowires // Journal of Physics: Conference Series - 2015, Vol. 661, No. 1, pp. 012053 [SJR: 0.21]
more >> - 6Bourauleuv A.D., Sibirev N.V., Gilstein E.P., Brunkov P.N., Mukhin I.S., Tchernycheva M., Khrebtov A.I., Samsonenko Y.B., Cirlin G.E. Study of the electrical properties of individual (Ga, Mn)As nanowires // Semiconductors - 2014, Vol. 48, No. 3, pp. 344-349 [IF: 0.602, SJR: 0.287]
more >> - 5Trukhin V.N., Bourauleuv A.D., Dhaka V.D., Cirlin G.E., Mustafin I., Kaliteevski M.A., Lipsanen H.K., Samsonenko Y.B. Ultrafast carrier dynamics in GaAs Nanowires // Lithuanian Journal of Physics - 2014, Vol. 54, No. 1, pp. 41-45 [IF: 0.537, SJR: 0.269]
more >> - 4Blokhin S.A., Nadtochiy A.M., Krasivichev A.A., Karachinsky L.Y., Vasil'Ev A.P., Nevedomskiy V.N., Maximov M.V., Cirlin G.E., Buravlev A.D., Maleev N.A., Ledentsov N.N., Ustinov V.M., Zhukov A.E. Optical anisotropy of InGaAs quantum dots // Semiconductors - 2013, Vol. 47, No. 1, pp. 85-89 [IF: 0.602, SJR: 0.287]
more >> - 3Bouravleuv A.D., Cirlin G.E., Sapega V.F., Werner P.E., Savin A., Lipsanen H.K. Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy // Journal of Applied Physics - 2013, Vol. 113, No. 14, pp. 144303 [IF: 2.068, SJR: 0.699]
more >> - 2Soshnikov I.P., Petrov V.A., Cirlin G.E., Samsonenko Y.B., Bourauleuv A.D., Zadiranov Y.M., Il'Inskaya N.D., Troshkov S.I. Growth specifics of GaAs nanowires in mesa // Physics of the Solid State - 2013, Vol. 55, No. 4, pp. 702-706 [IF: 0.86, SJR: 0.346]
more >> - 1Trukhin V.N., Buyskikh A.S., Kaliteevskaya N.A., Buravlev A.D., Samoylov L.L., Samsonenko Y.B., Cirlin G.E., Kaliteevski M.A., Gallant A.J. Terahertz generation by GaAs nanowires // Applied Physics Letters - 2013, Vol. 103, No. 7, pp. 072108 [IF: 3.411, SJR: 1.182]
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