Person Profile
Publications
- 21Lebedev S.P., Amel’Chuk D.G., Eliseev I.A., Barash I.S., Dementev P.A., Zubov A.V., Lebedev A.A. Surface morphology control of the SiC (0001) substrate during the graphene growth // Fullerenes Nanotubes and Carbon Nanostructures - 2020, Vol. 28, No. 4, pp. 281-285 [IF: 1.35]
more >> - 20Borodin B.R., Benimetskiy F.A., Dunaevskiy M., Sharov V.A., Smirnov A.N., Davydov V.Y., Lahderanta E., Lebedev S.P., Lebedev A.A., Alekseev P.A. MoSe2/graphene/6H-SiC heterojunctions: energy band diagram and photodegradation // Semiconductor Science and Technology - 2019, Vol. 34, No. 12, pp. 105794.R1 [IF: 2.305, SJR: 0.712]
more >> - 19Davydov S.Y., Zubov A.V., Lebedev A.A. A Model of a Surface Dimer in the Problem of Adsorption // Technical Physics Letters - 2019, Vol. 45, No. 5, pp. 461-463 [IF: 0.771, SJR: 0.338]
more >> - 18Davydov S.Y., Zubov A.V., Lebedev A.A. Coulomb Electron Interaction between an Adsorbate and Substrate: a Model of a Surface Dimer // Technical Physics Letters - 2019, Vol. 45, No. 9, pp. 924-926 [IF: 0.771, SJR: 0.338]
more >> - 17Eliseyev I.A., Davydov V.Y., Smirnov A.N., Nestoklon M.O., Dementev P.A., Lebedev S.P., Lebedev A.A., Zubov A.V., Mathew S., Pezoldt J., Bokai K., Usachov D.Y. Optical estimation of the carrier concentration and the value of strain in monolayer graphene grown on 4H-SiC // Semiconductors - 2019, Vol. 53, No. 14, pp. 1904-1909 [IF: 0.602, SJR: 0.287]
more >> - 16Kotousova I.S., Lebedev S.P., Lebedev A.A., Bulat P.V. Electron diffraction study of epitaxial graphene structure grown upon SiC (0001) thermal destruction in Ar atmosphere and in high vacuum // Physics of the Solid State - 2019, Vol. 61, No. 10, pp. 1940-1946 [IF: 0.86, SJR: 0.346]
more >> - 15Lebedev A.A., Kirillov A.V., Romanov L.P., Zubov A.V., Strelchuk A.M. 4H-SiC P-i-N diodes: development of technology and research of microwave switches based on it // International Journal of Science and Research - 2019, Vol. 8, No. 10, pp. 981-986
more >> - 14Lebedev A.A., Kozlovski V.V., Ivanov P.A., Levinshtein M.E., Zubov A.V. Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes // Semiconductors - 2019, Vol. 53, No. 10, pp. 1409-1413 [IF: 0.602, SJR: 0.287]
more >> - 13Lebedev A.A., Kozlovski V.V., Levinshtein M.E., Ivanov P.A., Strel’Chuk A.M., Zubov A.V., Fursin L. Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs // Semiconductor Science and Technology - 2019, Vol. 34, No. 4, pp. 045004 [IF: 2.305, SJR: 0.712]
more >> - 12Lebedev S.P., Barash I.S., Eliseyev I.A., Dementev P.A., Lebedev A.A., Bulat P.V. Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films // Technical Physics - 2019, Vol. 64, No. 12, pp. 1843-1849 [IF: 0.632, SJR: 0.297]
more >> - 11Usikov A.S., Borodkin K.V., Novikov S., Roenkov A.D., Goriachkin A.A., Puzyk M.V., Barash I.S., Lebedev S.P., Zubov A.V., Makarov Y., Lebedev A.A. Graphene/SiC dies for electrochemical blood-type sensing // Proceedings of the Estonian Academy of Sciences - 2019, Vol. 68, No. 2, pp. 207-213 [IF: 0.737, SJR: 0.266]
more >> - 10Usikov A.S., Puzyk M.V., Novikov S., Barash I.S., Medvedev O., Roenkov A.D., Goryachkin A., Lebedev S.P., Zubov A.V., Makarov Y.N., Lebedev A.A. Electrochemical Treatment of Graphene // Key Engineering Materials - 2019, Vol. 799, pp. 197-202 [SJR: 0.175]
more >> - 9Gomoyunova M.V., Grebenyuk G.S., Davydov V.Y., Ermakov I.A., Eliseyev I.A., Lebedev A.A., Lebedev S.P., Lobanova E.Y., Smirnov A.N., Smirnov D.A., Pronin I.I. Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide // Physics of the Solid State - 2018, Vol. 60, No. 7, pp. 1439-1446 [IF: 0.86, SJR: 0.346]
more >> - 8Kotousova I.S., Lebedev S.P., Lebedev A.A., Bulat P.V. Electron-Diffraction Study of the Structure of Epitaxial Graphene Grown by the Method of Thermal Destruction of 6H- and 4H-SiC (0001) in Vacuum // Physics of the Solid State - 2018, Vol. 60, No. 7, pp. 1419-1424 [IF: 0.86, SJR: 0.346]
more >> - 7Butko A.V., Butko V.Y., Lebedev S.P., Lebedev A.A., Kumzerov Y.A. Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide // Physics of the Solid State - 2017, Vol. 59, No. 10, pp. 2089-2091 [IF: 0.86, SJR: 0.346]
more >> - 6Kozlovski V.V., Lebedev A.A., Emtsev V.V., Oganesyan G.A. Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms - 2016, Vol. 384, pp. 100-105 [IF: 1.109, SJR: 0.429]
more >> - 5Lebedev A.A., Belov S.V., Mynbaeva M.G., Strel’Chuk A.M., Bogdanova E.V., Makarov Y.N., Usikov A.S., Kurin S.Y., Barash I.S., Roenkov A.D., Kozlovski V.V. 15 eV protons irradiation of the GaN Schottky Diodes // Materials Science Forum - 2016, Vol. 858, pp. 1186-1189 [SJR: 0.192]
more >> - 4Novikov S., Lebedeva N., Satrapinski A., Walden J., Davydov V., Lebedev A.A. Graphene based sensor for environmental monitoring of NO2 // Sensors and Actuators B: Chemical - 2016, Vol. 236, pp. 1054-1060 [IF: 5.401]
more >> - 3Novikov S.V., Makarov Y.N., Helava H., Lebedev S.P., Lebedev A.A., Davydov V.Y. Highly sensitive NO2 graphene sensor made on SiC grown in Ta crucible // Materials Science Forum - 2016, Vol. 858, pp. 1149-1152 [SJR: 0.192]
more >> - 2Lebedev A.A., Ber B.Y., Seredova N.V., Kazantsev D.Y., Kozlovski V.V. Radiation-Stimulated Photoluminescence in Electron Irradiated 4H-SiC // Journal of Physics D: Applied Physics - 2015, Vol. 48, No. 48, pp. 485106 [IF: 2.588, SJR: 0.857]
more >> - 1Strel’Chuk A.M., Yakimov E.B., Lavrent’Ev A.A., Kalinina E.V., Lebedev A.A. Characterization of 4H-SiC pn structures with unstable excess current // Materials Science Forum - 2015, Vol. 821-823, pp. 648-651 [SJR: 0.192]
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