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Publications

  1. 90Morassi M., Guan N., Dubrovskii V.G., Berdnikov Y.S., Barbier C., Mancini L., Largeau L., Babichev A.V., Kumaresan V., Julien F.H., Travers L., Gogneau N., Harmand J.C., Tchernycheva M. Selective Area Growth of GaN Nanowires on Graphene Nanodots // Crystal Growth and Design - 2020, Vol. 20, No. 2, pp. 552-559 [IF: 4.055, SJR: 0.966]
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  2. 89Romanov A.E., Kolesnikova A., Gutkin M.Y., Dubrovskii V.G. Elasticity of Axial Nanowire Heterostructures with Sharp and Diffuse Interfaces // Scripta Materialia - 2020, Vol. 176, pp. 42-46 [IF: 3.747, SJR: 2.027]
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  3. 88Rothman A., Dubrovskii V.G., Joselevich E. Kinetics and mechanism of planar nanowire growth // Proceedings of the National Academy of Sciences of the United States of America - 2020, Vol. 117, No. 1, pp. 152-160 [IF: 9.661, SJR: 5.011]
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  4. 87Bai M., Huang H., Liu Z., Zhan T., Xia S., Li X., Sibirev N. V. ., Bouravleuv A., Dubrovskii V.G., Cirlin G. InAs/InP core/shell nanowire gas sensor: Effects of InP shell on sensitivity and long-term stability // Applied Surface Science - 2019, Vol. 498, pp. 143756 [IF: 3.387, SJR: 1.295]
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  5. 86Bastiman F., Kuepers H., Somaschini C., Dubrovskii V.G., Geelhaar L. Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111) // Physical Review Materials - 2019, Vol. 3, No. 7, pp. 073401 [SJR: 1.439]
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  6. 85 [IF: 2.366, SJR: 0.896]
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  7. 84 [SJR: 0.779]
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  8. 83 [SJR: 0.285]
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  9. 82 [SJR: 0.285]
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  10. 81Dubrovskii V.G., Barcus J., Kim W., Vukajlovic-Plestina J., Fontcuberta I Morral A. Does desorption affect the length distributions of nanowires? // Nanotechnology - 2019, Vol. 30, No. 47, pp. 475604 [IF: 3.44, SJR: 0.926]
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  11. 80Dubrovskii V.G., Sibirev N.V., Halder N.N., Ritter D. Classification of the Morphologies and Related Crystal Phases of III-V Nanowires Based on the Surface Energy Analysis // Journal of Physical Chemistry C - 2019, Vol. 123, No. 30, pp. 18693-18701 [IF: 4.536, SJR: 1.401]
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  12. 79Dubrovskii V.G., Sokolova Z.V., Rylkova M.V., Zhiglinsky A.A. Nucleation of islands with vertical or truncated corner facets in vapor-liquid-solid nanowires // Физика и механика материалов = Materials Physics and Mechanics - 2019, Vol. 42, No. 2, pp. 159-164 [SJR: 0.285]
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  13. 78Dubrovskii V.G., Sokolovskii A.S. Evolution of the droplet shape in the vapor-liquid-solid growth of III-V nanowires under varying material fluxes // Физика и механика материалов = Materials Physics and Mechanics - 2019, Vol. 42, No. 3, pp. 265-271 [SJR: 0.285]
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  14. 77Hakkarainen T., Piton M.R., Fiordaliso E., Leshchenko E.D., Koelling S., Bettini J., Vinicius Avanco Galeti H., Koivusalo E., Gobato Y.G., Rodrigues A.D., Lupo D., Koenraad P.M., Leite E.R., Dubrovskii V.G., Guina M. Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires // Physical Review Materials - 2019, Vol. 3, No. 8, pp. 086001 [SJR: 1.439]
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  15. 76Koivusalo E.S., Hakkarainen T.V., Galeti H.V., Gobato Y.G., Dubrovskii V.G., Guina M.D. Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires // Nano Letters - 2019, Vol. 19, No. 1, pp. 82–89 [IF: 12.712, SJR: 4.853]
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  16. 75Koryakin A.A. ., Leshchenko E.D., Dubrovskii V.G. Effect of elastic stresses on the formation of axial heterojunctions in ternary AIIIBV nanowires // Physics of the Solid State - 2019, Vol. 61, No. 12, pp. 2459-2463 [IF: 0.86, SJR: 0.346]
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  17. 74Koryakin A.A. ., Leshchenko E.D., Dubrovskii V.G. Modeling the formation of InP/GaxIn(1-x)P axial nanowire heterostructures // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012058 [SJR: 0.21]
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  18. 73Leshchenko E.D., Dubrovskii V.G., Johansson J. Nucleation-limited composition of Al1-xInxAs nanowires // Journal of Physics: Conference Series - 2019, Vol. 1199, No. 1, pp. 012022 [SJR: 0.21]
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  19. 72Sokolovskii A.S., Dubrovskii V.G. Contact angle stability of gold droplets on top of GaAs nanowires in the non-stationary case // Journal of Physics: Conference Series - 2019, Vol. 1199, No. 1, pp. 012024 [SJR: 0.21]
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  20. 71Sokolovskii A.S., Robson M.T., Lapierre R.R., Dubrovskii V.G. Modeling selective-area growth of InAsSb nanowires // Nanotechnology - 2019, Vol. 30, No. 28, pp. 285601 [IF: 3.44, SJR: 0.926]
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  21. 70Vilson D., Sokolovskii A.S., Goktas N.I., Dubrovskii V.G., Lapierre R.R. Photovoltaic Light Funnels Grown by GaAs Nanowire Droplet Dynamics // IEEE Journal of Photovoltaics - 2019, Vol. 9, No. 5, pp. 1225-1231 [IF: 3.712, SJR: 1.023]
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  22. 69Vukajlovic-Plestina J., Kim W., Ghisalberti L., Varnavides G., Tutuncuoglu G., Potts H., Friedl M., Guniat L., Carter W.C., Dubrovskii V.G., Fontcuberta I Morral A. Fundamental aspects to localize self-catalyzed III-V nanowires on silicon // Nature Communications - 2019, Vol. 10, pp. 869 [IF: 12.124, SJR: 5.559]
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  23. 68Zeghouane M., Avit G., Andre Y., Bougerol C., Robin Y., Ferret P., Castelluci D., Gil E., Dubrovskii V.G., Amano H. Compositional control of homogeneous InGaN nanowires with the In content up to 90% // Nanotechnology - 2019, Vol. 30, No. 4, pp. 044001 [IF: 3.44, SJR: 0.926]
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  24. 67Berdnikov Y.S., Dubrovskii V.G. Length distributions of vapor-liquid-solid nanowires // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 384
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  25. 66 [IF: 1.751, SJR: 0.513]
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  26. 65
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  27. 64Dubrovskii V.G., Sokolova Z.V., Rylkova M.V., Zhiglinsky A.A. Composition and contact angle of Au-III-V droplets on top of Au-catalyzed III-V nanowires // Физика и механика материалов = Materials Physics and Mechanics - 2018, Vol. 36, No. 1, pp. 1-7 [SJR: 0.285]
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  28. 63Friedl M., Cerveny K., Weigele P., Tutuncuoglu G., Marti-Sanchez S., Huang C., Patlatiuk T., Potts H., Sun Z., Hill M.O., Guniat L., Kim W., Zamani M., Dubrovskii V.G., Arbiol J., Lauhon L.J., Zumbuhl D.M., Fontcuberta Morral A.I. Template-Assisted Scalable Nanowire Networks // Nano Letters - 2018, Vol. 18, No. 4, pp. 2666-2671 [IF: 12.712, SJR: 4.853]
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  29. 62Hijazi H., Dubrovskii V.G., Monier G., Gil E., Leroux C., Avit G., Trassoudaine A., Bougerol C., Castellucci D., Robert-Goumet C., Andre Y. Influence of Silicon on the Nucleation Rate of GaAs Nanowires on Silicon Substrates // Journal of Physical Chemistry C - 2018, Vol. 122, No. 33, pp. 19230-19235 [IF: 4.536, SJR: 1.401]
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  30. 61Jean T., Dubrovskii V.G. Suppression of miscibility gaps in ternary III-V nanowires grown at high supersaturations // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 380
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  31. 60Kim W., Dubrovskii V.G., Vukajlovic-Plestina J., Tutuncuoglu G., Francaviglia L., Guniat L., Potts H., Friedl M., Leran J., Fontcuberta I Morral A. Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires // Nano Letters - 2018, Vol. 18, No. 1, pp. 49-57 [IF: 12.712, SJR: 4.853]
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  32. 59Koryakin A.A. ., Zannier V., Rossi F., Ercolani D., Battiato S., Sorba L., Dubrovskii V.G. Modeling the comosition of ternary III-V nanowires and axial nanowire heterostructures // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 383
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  33. 58Leshchenko E.D., Ghasemi M., Dubrovskii V.G., Johansson J. Nucleation-limited composition of ternary III-V nanowires forming from quaternary gold based liquid alloys // CrystEngComm - 2018, Vol. 20, No. 12, pp. 1649-1655 [IF: 3.474, SJR: 0.813]
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  34. 57Leshchenko E.D., Kuyanov P., Laperr R., Dubrovskii V.G. Tuning the morphology of self-assisted GaP nanowires // Nanotechnology - 2018, Vol. 29, No. 22, pp. 225603 [IF: 3.44, SJR: 0.926]
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  35. 56Leshchenko E.D., Kuyanov P., Lapierre R.R., Dubrovskii V.G. Modeling the morphology of self-assisted GaP nanowires grown by molecular beam epitaxy // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 381
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  36. 55Roche E., Andre Y., Avit G., Bougerol C., Castelluci D., Reveret F., Gil E., Medard F., Leymarie J., Jean T., Dubrovskii V.G., Trassoudaine A. Circumventing the miscibility gap in InGaN nanowires emitting from blue to red // Nanotechnology - 2018, Vol. 29, No. 46, pp. 465602 [IF: 3.44, SJR: 0.926]
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  37. 54Sibirev N.V., Glas F., Dubrovskii V.G. Narrowing the length distributions of self-assisted III-V nanowires by nucleation antibunching // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 414
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  38. 53Sokolovskii A.S., Kim W., Vukajlovic-Plestina J., Tutuncuoglu G., Francaviglia L., Guniat L., Potts H., Friedl M., Leran J., Fontcuberta Morral A.I., Dubrovskii V.G. Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 412
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  39. 52Tauchnitz T., Berdnikov Y., Dubrovskii V.G., Schneider H., Helm M., Dimakis E. A simple route to synchronized nucleation of self-catalyzed GaAs nanowires on silicon for sub-Poissonian length distributions // Nanotechnology - 2018, Vol. 29, No. 50, pp. 504004 [IF: 3.44, SJR: 0.926]
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  40. 51Zamani M., Tutuncuoglu G., Marti-Sanchez S., Francaviglia L., Guniat L., Ghisalberti L., Potts H., Friedl M., Markov E., Kim W., Leran J., Dubrovskii V.G., Arbiol J., Fontcuberta I Morral A. Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality // Nanoscale - 2018, Vol. 10, No. 36, pp. 17080-17091 [IF: 7.367, SJR: 2.038]
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  41. 50Zannier V., Rossi F., Dubrovskii V.G., Ercolani D., Battiato S., Sorba L. Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces // Nano Letters - 2018, Vol. 18, No. 1, pp. 167-174 [IF: 12.712, SJR: 4.853]
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  42. 49Leshchenko E.D., Dubrovskii V.G. Inhomogeneous Dopant Distribution in III-V Nanowires // Semiconductors - 2017, Vol. 51, No. 11, pp. 1427-1430 [IF: 0.602, SJR: 0.287]
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  43. 48Berdnikov Y., Sibirev N. V. ., Schmidtbauer J., Borg M., Johansson J., Dubrovskii V.G. Broadening of Length Distributions of Au-catalyzed InAs Nanowires // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040001 [SJR: 0.177]
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  44. 47Berdnikov Y.S., Sibirev N.V., Dubrovskii V.G. Contribution of droplet volume fluctuation to dispersion of nanowire length // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012040 [SJR: 0.21]
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  45. 46Dong Z., Andre Y., Dubrovskii V.G., Bougerol C., Monier G., Ramdani R.M., Trassoudaine A., Castelluci D., Leroux C.H., Gil E. Self-catalyzed growth of GaAs nanowires on silicon by HVPE // International Conference Laser Optics, LO 2016 - 2016, pp. R91
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  46. 45 [IF: 0.771, SJR: 0.338]
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  47. 44 [IF: 1.751, SJR: 0.513]
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  48. 43 [IF: 3.836, SJR: 1.78]
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  49. 42 [IF: 0.771, SJR: 0.338]
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  50. 41Dubrovskii V.G., Berdnikov Y., Schmidtbauer J., Borg M., Storm K., Deppert K., Johansson J. Length Distributions of Nanowires Growing by Surface Diffusion // Crystal Growth & Design - 2016, Vol. 16, No. 4, pp. 2167-2172 [IF: 4.055, SJR: 0.966]
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  51. 40Dubrovskii V.G., Berdnikov Y., Sibirev N.V. Regimes of radial growth for Ga-catalyzed GaAs nanowires // Applied Physics A: Materials Science and Processing - 2016, Vol. 122, No. 7, pp. 671 [IF: 1.455, SJR: 0.485]
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  52. 39Dubrovskii V.G., Sibirev N. V. . Factors Influencing the Interfacial Abruptness in Axial III-V Nanowire Heterostructures // Crystal Growth & Design - 2016, Vol. 16, No. 4, pp. 2019-2023 [IF: 4.055, SJR: 0.966]
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  53. 38Dubrovskii V.G., Sibirev N.V., Berdnikov Y.S., Gomes U.P., Ercolani D., Zannier V., Sorba L. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires // Nanotechnology - 2016, Vol. 27, No. 37, pp. 375602 [IF: 3.44, SJR: 0.926]
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  54. 37Gao Q., Dubrovskii V.G., Caroff P., Wong-Leung J., Li L., Guo Y., Fu L., Tan H., Jagadish C.H. Simultaneous selective-area and vapor-liquid-solid growth of InP nanowire arrays // Nano Letters - 2016, Vol. 16, No. 7, pp. 4361-4367 [IF: 12.712, SJR: 4.853]
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  55. 36Grecenkov J., Dubrovskii V.G. Chemical potentials and growth rates of gold-catalyzed ternary InGaAs nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012010 [SJR: 0.21]
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  56. 35Grecenkov J., Dubrovskii V.G., Ghasemi M., Johansson J. Quaternary Chemical Potentials for Gold-Catalyzed Growth of Ternary InGaAs Nanowires // Crystal Growth and Design - 2016, Vol. 16, No. 8, pp. 4529-4530 [IF: 4.055, SJR: 0.966]
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  57. 34Koriakin A.A. ., Sibirev N. V. ., Huang H., Ren X., Dubrovskii V.G. As Flux Controlled Formation of (Al,Ga)As Axial Nanowire Heterostructures // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040002 [SJR: 0.177]
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  58. 33Koryakin A.A. ., Repetun L., Sibirev N.V., Dubrovskii V.G. Self-induced GaN nanowire growth: Surface density determination // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012032 [SJR: 0.21]
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  59. 32Leshchenko E.D., Turchina M.A., Dubrovskii V.G. Self-equilibration of the radius distribution in self-catalyzed GaAs nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012033 [SJR: 0.21]
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  60. 31Leshchenko E.D., Turchina M.A., Dubrovskii V.G. The initial stage of autocatalytic growth of GaAs filamentary nanocrystals // Technical Physics Letters - 2016, Vol. 42, No. 8, pp. 818-821 [IF: 0.771, SJR: 0.338]
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  61. 30Timofeeva M.A., Bolshakov A.P., Tovee P.D., Zeze D.A., Dubrovskii V.G., Kolosov O.V. Scanning thermal microscopy with heat conductive nanowire probes // Ultramicroscopy - 2016, Vol. 162, pp. 42-51 [IF: 2.843, SJR: 1.29]
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  62. 29Trassoudaine A., Roche E., Bougerol C., Andre Y., Avit G., Monier G., Ramdani M.R., Gil E., Castelluci D., Dubrovskii V.G. Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy // Journal of Crystal Growth - 2016, Vol. 454, pp. 1-5 [IF: 1.751, SJR: 0.513]
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  63. 28Vukajlovic-Plestina J., Dubrovskii V.G., Tutuncuoglu G., Potts H., Ricca R., Meyer F., Matteini F., Leran J., Morral A. Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III–Vs on Si // Nanotechnology - 2016, Vol. 27, No. 45, pp. 455601 [IF: 3.44, SJR: 0.926]
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  64. 27Ameruddin A.S., Caroff P., Tan H., Jagadish C., Dubrovskii V.G. Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires // Nanoscale - 2015, Vol. 7, No. 39, pp. 16266-16272 [IF: 7.367, SJR: 2.038]
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  65. 26Berdnikov I.S., Sibirev N.V., Dubrovskii V.G., Kang J.H. Self-limiting growth and bimodal size distribution of Au nanoislands on InAs(111)B surface // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012012 [SJR: 0.21]
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  66. 25 [IF: 4.055, SJR: 0.966]
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  67. 24 [IF: 0.771, SJR: 0.338]
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  68. 23 [IF: 2.965, SJR: 1.071]
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  69. 22 [IF: 0.771, SJR: 0.338]
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  70. 21 [IF: 0.771, SJR: 0.338]
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  71. 20Dubrovskii V.G., Berdnikov Y.S. Natural scaling of size distributions in homogeneous and heterogeneous rate equations with size-linear capture rates // Journal of Chemical Physics - 2015, Vol. 142, No. 12, pp. 124110 [IF: 2.965, SJR: 1.071]
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  72. 19Dubrovskii V.G., Berdnikov Y.S., Sokolova Z.V. Scaling size distribution functions of heterogeneous clusters in a linear capture coefficient model // Technical Physics Letters - 2015, Vol. 41, No. 3, pp. 242-245 [IF: 0.771, SJR: 0.338]
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  73. 18Dubrovskii V.G., Grecenkov J. Zeldovich Nucleation Rate, Self-Consistency Renormalization, and Crystal Phase of Au-Catalyzed GaAs Nanowires // Crystal Growth & Design - 2015, Vol. 15, No. 1, pp. 340-347 [IF: 4.055, SJR: 0.966]
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  74. 17Dubrovskii V.G., Sibirev N.V. Analytic scaling function for island-size distributions // Physical Review E - 2015, Vol. 91, No. 4, pp. 042408 [IF: 2.366, SJR: 0.896]
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  75. 16Dubrovskii V.G., Sokolova Z.V. Scale invariance of continuum size distribution upon irreversible growth of surface islands // Technical Physics Letters - 2015, Vol. 41, No. 6, pp. 526-528 [IF: 0.771, SJR: 0.338]
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  76. 15Dubrovskii V.G., Timofeeva M.A., Kelrich A., Ritter D. Growth and morphological modeling of InP nanowires obtained by Au-catalyzed selective area MOMBE // Journal of Crystal Growth - 2015, Vol. 413, pp. 25-30 [IF: 1.751, SJR: 0.513]
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  77. 14Dubrovskii V.G., Xu T., Alvarez A.D., Plissard S.R., Caroff P., Glas F., Grandidier B. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires // Nano Letters - 2015, Vol. 15, No. 8, pp. 5580-5584 [IF: 12.712, SJR: 4.853]
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  78. 13Gomes U.P., Ercolani D., Sibirev N. V. ., Gemmi M., Dubrovskii V.G., Beltram F., Sorba L. Catalyst-free growth of InAs nanowires on Si (111) by CBE // Nanotechnology - 2015, Vol. 26, No. 41, pp. 415604 [IF: 3.44, SJR: 0.926]
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  79. 12Grecenkov J., Dubrovskii V.G. Modelling polytypism in III-V nanowires: role of group V and nucleation patterns during the growth // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012017 [SJR: 0.21]
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  80. 11Kelrich A., Dubrovskii V.G., Calahorra Y., Cohen S., Ritter D. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE // Nanotechnology - 2015, Vol. 26, No. 8, pp. 085303 [IF: 3.44, SJR: 0.926]
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  81. 10Matteini F., Dubrovskii V.G., Ruffer D., Tutuncuoglu G., Fontana Y., Morral A.F. Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon // Nanotechnology - 2015, Vol. 26, No. 10, pp. 105603 [IF: 3.44, SJR: 0.926]
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  82. 9Mukhin I.S., Fadeev I.V., Zhukov M.V., Dubrovskii V.G., Golubok A.O. Framed carbon nanostructures: Synthesis and applications in functional SPM tips // Ultramicroscopy - 2015, Vol. 148, pp. 151-157 [IF: 2.843, SJR: 1.29]
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  83. 8Robson M.T., Dubrovskii V.G., Lapierre R.R. Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates // Nanotechnology - 2015, Vol. 26, No. 46, pp. 465301 [IF: 3.44, SJR: 0.926]
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  84. 7Rozhavskaya M.M., Lundin W.V., Lundina E.Y., Davydov V.Y., Troshkov S.I., Vasilyev A.A., Brunkov P.N., Tsatsulnikov A.F., Dubrovskii V.G. Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film // Journal of Applied Physics - 2015, Vol. 117, No. 2, pp. 024301 [IF: 2.068, SJR: 0.699]
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  85. 6Rozhavskaya M.M., Lundin W.V., Troshkov S.I., Tsatsulnikov A.F., Dubrovskii V.G. Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling // Physica Status Solidi (A) Applications and Materials Science - 2015, Vol. 212, No. 4, pp. 851-854 [IF: 1.775, SJR: 0.532]
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  86. 5Sibirev N.V., Koriakin A.A., Zeze D., Dubrovskii V.G. Modeling of axial heterostructure formation in ternary III-V nanowires // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012007 [SJR: 0.21]
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  87. 4Berdnikov Y., Dubrovskii V.G. Size distributions and scaling relations for heterogeneous nucleation and growth of atomic chains // Journal of Physics: Conference Series - 2014, Vol. 541, No. 1, pp. 012089 [SJR: 0.21]
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  88. 3Dubrovskii V.G., Berdnikov Y.S. Size distributions and scaling in heterogeneous nucleation with size-linear rate constants // Физика и механика материалов = Materials Physics and Mechanics - 2014, Vol. 21, No. 3, pp. 207-221 [SJR: 0.285]
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  89. 2Dubrovskii V.G., Grecenkov J. Recipes for crystal phase design in Au-catalyzed III-V nanowires // Journal of Physics: Conference Series - 2014, Vol. 541, No. 1, pp. 012001 [SJR: 0.21]
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  90. 1Periwal P., Sibirev N.V., Patriarche G., Salem B., Bassani F., Dubrovskii V.G., Baron T. Composition-dependent interfacial abruptness in Au-catalyzed Si1–xGex/Si/Si1–xGex nanowire heterostructures // Nano Letters - 2014, Vol. 14, No. 9, pp. 5140–5147 [IF: 12.712, SJR: 4.853]
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