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Publications

  1. 7Nikolaev V.I., Malygin G.A., Averkin A.I., Stepanov S.I., Zograf G.P. Anomalous stress-strain behaviour in Ni49Fe18Ga27Co6 crystals compressed along [110] // Materials Today: Proceedings - 2017, Vol. 4, No. 3, pp. 4807-4813 [SJR: 0.341]
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  2. 6Nikolaev V.I., Maslov V.N., Stepanov S.I., Pechnikov A.I., Krymov V.M., Nikitina I.P., Guzilova L.I., Bougrov V.E., Romanov A.E. Growth and characterization of beta-Ga2O3 crystals // Journal of Crystal Growth - 2017, Vol. 457, pp. 132–136 [IF: 1.751, SJR: 0.513]
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  3. 5Priadko A.I., Nikolaev V.I., Pulnev S.A., Stepanov S.I., Rogov A.V., Chikiryaka A.V., Shmakov O.A. Shape memory Cu-Al-Ni single crystals for application in rotary actuators // Физика и механика материалов = Materials Physics and Mechanics - 2017, Vol. 32, No. 1, pp. 83-87 [SJR: 0.285]
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  4. 4Nikolaev V.I., Pechnikov A.I., Stepanov S.I., Nikitina I.P., Smirnov A.N., Chikiryaka A.V., Sharofidinov S.S., Bougrov V.E., Romanov A.E. Epitaxial growth of (2-01) Beta-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy // Materials Science in Semiconductor Processing - 2016, Vol. 47, pp. 16-19 [IF: 2.359, SJR: 0.695]
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  5. 3Nikolaev V.I., Pechnikov A.I., Stepanov S.I., Sharofidinov S.S., Golovatenko A.A., Nikitina I.P., Smirnov A.N., Bugrov V.E., Romanov A.E., Brunkov P.N., Kirilenko D.A. Chloride epitaxy of beta-Ga2O3 layers grown on c-sapphire substrates // Semiconductors - 2016, Vol. 50, No. 7, pp. 980-983 [IF: 0.602, SJR: 0.287]
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  6. 2Stepanov S.I., Nikolaev V.I., Bougrov V.E., Romanov A.E. Gallium Oxide: Properties and Applications - a Review // Reviews on Advanced Materials Science - 2016, Vol. 44, No. 1, pp. 63-86 [IF: 2.5, SJR: 0.361]
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  7. 1Nikolaev V.I., Pechnikov A.I., Maslov V.N., Golovatenko A.A., Krymov V.M., Stepanov S.I., Zhumashev N.K., Bougrov V.E., Romanov A.E. GaN growth on beta-Ga2O3 substrates by HVPE // Физика и механика материалов = Materials Physics and Mechanics - 2015, Vol. 22, No. 1, pp. 59-63 [SJR: 0.285]
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