Research Center for Advanced Functional Materials and Laser Communication Systems

Publications

1. 10Berdnikov Y.S., Sibirev N. V. ., Khayrudinov V., Alaferdov A., Moshkalev S., Ubyivovk E., Lipsanen H., Bouravleuv A. Growth of GaAs Nanowire–Graphite Nanoplatelet Hybrid Structures // CrystEngComm - 2019, Vol. 21, No. 41, pp. 6165-6172 [IF: 3.474, SJR: 0.813]
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2. 9Borodin B.R., Alekseev P.A., Dunaevskiy M.S., Khayrudinov V., Lipsanen H. Analysis of doping distribution in horizontal GaAs nanowires with axial p-n junction by the conductive atomic force microscopy // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012228 [SJR: 0.21]
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3. 8Seppanen H., Kim I., Etula J., Ubyivovk E.V., Bouravleuv A., Lipsanen H. Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition // Materials - 2019, Vol. 12, No. 3, pp. 406 [IF: 2.654, SJR: 0.682]
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4. 7Mynbaeva M.G., Shirshnev P.S., Kremleva A.V., Smirnov A.N., Ivanova E.V., Zamoryanskaya M.V., Nikitina I.P., Lavrent'Ev A.A., Mynbaev K.D., Odnoblyudov M.A., Bauman D.A., Lipsanen H., Nikolaev V.I., Bougrov V.E., Romanov A.E. Optical properties of bulk gallium oxide grown from the melt // Reviews on Advanced Materials Science - 2018, Vol. 57, No. 1, pp. 97-103 [IF: 2.5, SJR: 0.361]
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5. 6Mynbaev K.D., Bazhenov N.L., Semakova A.A., Chernyaev A.V., Kizhaev S.S., Stoyanov N.D., Bougrov V.E., Lipsanen H.K., Salikhov K. Spontaneous and stimulated emission in InAsSb-based LED heterostructures // Infrared Physics and Technology - 2017, Vol. 85, pp. 246-250 [IF: 1.713, SJR: 0.542]
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6. 5Mynbaev K.D., Bazhenov N.L., Semakova A.A., Mikhailova M.P., Stoyanov N.D., Kizhaev S.S., Molchanov S.S., Astakhova A.P., Chernyaev A.V., Lipsanen H., Bougrov V.E. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K // Semiconductors - 2017, Vol. 51, No. 2, pp. 239-244 [IF: 0.602, SJR: 0.287]
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7. 4Mynbaeva M.G., Kremleva A.V., Kirilenko D.A., Sitnikova A.A., Pechnikov A.I., Mynbaev K.D., Nikolaev V.I., Bugrov V.E., Lipsanen H., Romanov A.E. TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern // Journal of Crystal Growth - 2016, Vol. 445, pp. 30-36 [IF: 1.751, SJR: 0.513]
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8. 3Polukhin I.S., Mikhailovskiy G.A., Rybalko D.A., Solov'Ev Y.V., Petukhov E.P., Odnoblyudov M.A., Kolodeznyi E.S., Bougrov V.E., Mikhailov A.K., Lipsanen H.K. Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures // Физика и механика материалов = Materials Physics and Mechanics - 2016, Vol. 29, No. 1, pp. 71-75 [SJR: 0.285]
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9. 2Rudinsky M.E., Karpov S.I., Lipsanen H., Romanov A.E. Critical thickness and bow of pseudomorphic InxGa1-xAs-based laser heterostructures grown on (001)GaAs and (001)InP substrates // Физика и механика материалов = Materials Physics and Mechanics - 2015, Vol. 24, No. 3, pp. 278-283 [SJR: 0.285]
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10. 1Bouravleuv A.D., Cirlin G.E., Sapega V.F., Werner P.E., Savin A., Lipsanen H.K. Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy // Journal of Applied Physics - 2013, Vol. 113, No. 14, pp. 144303 [IF: 2.068, SJR: 0.699]
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