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Publications

  1. 72Babichev A.V., Dudelev V.V., Gladyshev A.G., Mikhailov D.A., Kurochkin A.S., Kolodeznyi E.S., Bougrov V.E., Nevedomskiy V.N., Karachinsky L.Y., Novikov I.I., Denisov D.V., Ionov A.S., Slipchenko S.O., Lutetskiy A.V., Pikhtin N.A., Sokolovskii G.S., Egorov A.Y. High-Power Quantum-Cascade Lasers Emitting in the 8-mu m Wavelength Range // Technical Physics Letters - 2019, Vol. 45, No. 7, pp. 735-738 [IF: 0.771, SJR: 0.338]
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  2. 71Babichev A.V., Gladyshev A.G., Denisov D.V., Karachinsky L.Y., Novikov I.I., Boulley L., Bousseksou A., Pikhtin N.A., Egorov A.Y. Lasing of a Quantum-Cascade Laser with a Thin Upper Cladding // Optics and spectroscopy - 2019, Vol. 127, No. 2, pp. 279-284 [IF: 0.716]
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  3. 70Babichev A.V., Gladyshev A.G., Kurochkin A.S., Dudelev V.V., Kolodeznyi E.S., Sokolovskii G.S., Bougrov V.E., Karachinsky L.Y., Novikov I.I., Denisov D.V., Ionov A.S., Slipchenko S.O., Lyutetskii A.V., Pikhtin N.A., Egorov A.Y. Room Temperature Lasing of Single-Mode Arched-Cavity Quantum-Cascade Lasers // Technical Physics Letters - 2019, Vol. 45, No. 4, pp. 398-400 [IF: 0.771]
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  4. 69Babichev A.V., Gladyshev A.G., Kurochkin A.S., Kolodeznyi E.S., Nevedomskii V.N., Karachinsky L.Y., Novikov I.I., Sofronov A.N., Egorov A.Y. Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser // Semiconductors - 2019, Vol. 53, No. 3, pp. 345-349 [IF: 0.602, SJR: 0.287]
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  5. 68Babichev A.V., Pashnev D.A., Gladyshev A.G., Kurochkin A.S., Kolodeznyi E.S., Karachinsky L.Y., Novikov I.I., Denisov D.V., Boulley L., Firsov D.A., Vorobjev L.E., Pikhtin N., Bousseksou A., Egorov A.Y. Spectral shift of quantum-cascade laser emission under the action of control voltage // Technical Physics Letters - 2019, Vol. 45, No. 11, pp. 1136-1139 [IF: 0.771, SJR: 0.338]
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  6. 67Blokhin S.A., Bobrov M.A., Blokhin A.A., Kuzmenkov A.G., Maleev N.A., Ustinov V.M., Kolodeznyi E.S., Rochas S.S., Babichev A.V., Novikov I.I., Gladyshev A.G., Karachinskii L.Y., Denisov D.V., Voropaev K.O., Ionov A.S., Egorov A.Y. Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique // Optics and spectroscopy - 2019, Vol. 127, No. 1, pp. 140-144 [IF: 0.716]
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  7. 66Blokhin S.A., Bobrov M.A., Blokhin A.A., Kuz’Menkov A.G., Maleev N.A., Ustinov V.M., Kolodeznyi E.S., Rochas S.S., Babichev A.V., Novikov I.I., Gladyshev A.G., Karachinsky L.Y., Denisov D.V., Voropaev K.O., Ionov A.S., Egorov A.Y. Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-mu m Wafer-Fused Vertical-Cavity Surface-Emitting Lasers // Semiconductors - 2019, Vol. 53, No. 8, pp. 1104-1109 [IF: 0.602, SJR: 0.287]
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  8. 65Dudelev V.V., Babichev A.V., Mikhailov D.A., Gladyshev A.G., Losev S.N., Kognovitskaya E.A., Novikov I.I., Lyuretskiy A.V., Slipchenko S.O., Pikhtin N.A., Karachinsky L.Y., Egorov A.Y., Sokolovskii G.S. Quantum-cascade lasers with U-shaped resonator: single frequency generation at room temperature // Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 - 2019, pp. 8872297
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  9. 64Dudelev V.V., Mikhailov D.A., Andreev A.D., Kognovitskaya E.A., Lyutetskiy A.V., Slipchenko S.O., Pikhtin N.A., Gladyshev A.G., Denisov D.G., Voropaev K.O., Ionov A.S., Babichev A.V., Novikov I.I., Karachinskii L.Y., Egorov A.Y., Sokolovskii G.S. Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 mu m // Quantum Electronics - 2019, Vol. 49, No. 12, pp. 1158-1162 [IF: 1.119, SJR: 0.418]
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  10. 63Dudelev V.V., Mikhailov D.A., Babichev A.V., Andreev A.D., Kognovitskaya E.A., Bobretsova Y.K., Slipchenko S.O., Pikhtin N.A., Gladyshev A.G., Denisov D.V., Novikov I.I., Karachinskii L.Y., Kuchinskii V.I., Egorov A.Y., Sokolovskii G.S. High-power Lambda = 8 Mu m quantum-cascade lasers at room temperature // Journal of Physics: Conference Series - 2019, Vol. 1400, No. 6, pp. 066048 [SJR: 0.21]
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  11. 62Dudelev V.V., Mikhailov D.A., Babichev A.V., Losev S.N., Chistyakov D.V., Kognovitskaya E.A., Avrov D.D., Slipchenko S.O., Lyutetskii A.V., Pikhtin N.A., Gladyshev A.G., Karachinsky L.Y., Novikov I.I., Kuchinskii V.I., Egorov A.Y., Sokolovskii G.S. Generation of Frequency Combs by Quantum Cascade Lasers Emitting in the 8-mu m Wavelength Range // Technical Physics Letters - 2019, Vol. 45, No. 10, pp. 1027-1030 [IF: 0.771, SJR: 0.338]
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  12. 61Dudelev V.V., Mikhailov D.A., Chistyakov D.V., Kognovitskaya E.A., Lyutetskiy A.V., Slipchenko S.O., Pikhtin N.A., Gladyshev A.G., Denisov D.V., Voropaev K.O., Ionov A.S., Babichev A.V., Novikov I.I., Karachinskii L.Y., Kuchinskii V.I., Egorov A.Y., Sokolovskii G.S. High-coupling distributed feedback lasers for the 1.55 mu m spectral region // Quantum Electronics - 2019, Vol. 49, No. 9, pp. 801-803 [IF: 1.119, SJR: 0.418]
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  13. 60Maksimov M.V., Shernyakov Y.M., Zubov F.I., Novikov I.I., Gladyshev A.G., Karachinskii L.Y., Denisov D.V., Rochas S.S., Kolodeznyi E.S., Egorov A.Y., Zhukov A.E. Temperature Dependence of the Parameters of 1.55-um Semiconductor Lasers with Thin Quantum Wells Based on Phosphorus-Free Heterostructures // Technical Physics Letters - 2019, Vol. 45, No. 6, pp. 549–552 [IF: 0.771, SJR: 0.338]
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  14. 59Pozina G., Girshova E.I., Morozov K.M., Ivanov K.A., Egorov A.Y., Kaliteevski M.A. Purcell Effect and Nonlinear Behavior of the Emission in a Periodic Structure Composed of InAs Monolayers Embedded in a GaAs Matrix // Annalen der Physik (Berlin) - 2019, Vol. 531, No. 6, pp. 1800388 [IF: 3.039]
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  15. 58Pozina G., Ivanov K.A., Morozov K.M., Girshova E.I., Egorov A.Y., Clark S.J., Kaliteevski M.A. Enhancement of light emission in Bragg monolayer-thick quantum well structures // Scientific Reports - 2019, Vol. 9, pp. 10162 [IF: 4.259, SJR: 1.24]
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  16. 57Rochas S.S., Kolodeznyi E.S., Kozyreva O.A., Voropaev K.O., Sudas D.P., Novikov I.I., Egorov A.Y. A heterostructure for resonant-cavity GaAs p-i-n photodiode with 840-860 nm wavelength // Journal of Physics: Conference Series - 2019, Vol. 1236, No. 1, pp. 012071 [SJR: 0.21]
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  17. 56Rochas S.S., Novikov I.I., Gladyshev A.G., Kolodeznyi E.S., Maximov M.V., Zubov F.I., Shernyakov Y.M., Karachinsky L.Y., Zhukov A.E., Denisov D.V., Egorov A.Y. Temperature performance of InGaAs/InGaAlAsTemperature performance of InGaAs/InGaAlAs laser diodes with delta-doping active region // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012104 [SJR: 0.21]
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  18. 55Shchukin V.A., Ledentsov N.N., Egorov A.Y. Wavelength–stabilized near–field laser // Optics express - 2019, Vol. 27, No. 22, pp. 32019-32036 [IF: 3.307, SJR: 1.394]
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  19. 54Babichev A.V., Gladyshev A.G., Kolodeznyi E.S., Kurochkin A.S., Sokolovskii G.S., Bougrov V.E., Karachinsky L.Y., Novikov I.I., Dudelev V.V., Nevedomsky V.N., Slipchenko S.O., Lutetskiy A.V., Sofronov A.N., Firsov D.A., Vorobjev L.E., Pikhtin N.A., Bousseksou A., Egorov A.Y. Quantum-cascade lasers of mid-IR spectral range: Epitaxy, diagnostics and device characteristics // EPJ Web of Conferences - 2018, Vol. 195, pp. 04001
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  20. 53Babichev A.V., Gladyshev A.G., Kurochkin A.S., Kolodeznyi E.S., Sokolovskii G.S., Bougrov V.E., Karachinsky L.Y., Novikov I.I., Bousseksou A., Egorov A.Y. Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 mu m Wavelength // Semiconductors - 2018, Vol. 52, No. 8, pp. 1082-1085 [IF: 0.602, SJR: 0.287]
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  21. 52Babichev A.V., Gladyshev A.Y., Kolodeznyi E.S., Kurochkin A.S., Sokolovskii G.S., Bougrov V.E., Karachinsky L.Y., Novikov I.I., Dudelev V.V., Nevedomsky V.N., Slipchenko S.O., Lutetskiy A.V., Sofronov A.N., Firsov D.A., Vorobjev L.E., Pikhtin N.A., Egorov A.Y. Growth and optical characterization of 7.5 ?m quantum-cascade laser heterostructures grown by MBE // Journal of Physics: Conference Series - 2018, Vol. 1124, No. 4, pp. 041029 [SJR: 0.21]
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  22. 51Babichev A.V., Gusev G.A., Sofronov A.N., Firsov D.A., Vorob’Ev L.E., Usikova A.A., Zadiranov Y.M., Il’Inskaya N.D., Nevedomskii V.N., Dudelev V.V., Sokolovskii G.S., Gladyshev A.G., Karachinsky L.Y., Novikov I.I., Egorov A.Y. Lasing in 9.6-mu m Quantum Cascade Lasers // Technical Physics - 2018, Vol. 63, No. 10, pp. 1511-1515 [IF: 0.632]
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  23. 50Babichev A.V., Karachinskii L.Y., Novikov I.I., Gladyshev A.G., Sirbu A., Mikhailov S., Iakovlev V., Blokhin S.A., Stepniak G., Chorchos L., Turkiewicz J.P., Voropaev K.O., Ionov A.S., Agustin M., Ledentsov N.N., Egorov A.Y. Vertical-Cavity Surface-Emitting 1.55-mu m Lasers Fabricated by Fusion // Technical Physics Letters - 2018, Vol. 44, No. 1, pp. 24-27 [IF: 0.771, SJR: 0.338]
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  24. 49Babichev A.V., Kurochkin A.S., Kolodeznyi E.C., Filimonov A.V., Usikova A.A., Nevedomsky V.N., Gladyshev A.G., Karachinsky L.Y., Novikov I.I., Egorov A.Y. Heterostructures of single-wavelength and dual-wavelength quantum-cascade lasers // Semiconductors - 2018, Vol. 52, No. 6, pp. 745-749 [IF: 0.602, SJR: 0.287]
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  25. 48Babichev A.V., Sokolovskii G.S., Ustinov V.M., Gladyshev A.G., Karachinsky L.Y., Novikov I.I., Egorov A.Y. Quantum-cascade lasers of 8-9 mu m spectral range // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 173
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  26. 47Baranov A.I., Gudovskikh A., Kudryashov D.A., Lazarenko A.A., Morozov I.A., Mozharov A.M., Nikitina E.V., Pirogov E.V., Sobolev M.S., Zelentsov K.S., Egorov A.Y., Darga A., Le Gall S., Kleider J.P. Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy // Journal of Applied Physics - 2018, Vol. 123, No. 16, pp. 161418 [IF: 2.068, SJR: 0.699]
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  27. 46Buyalo M.S., Gadzhiyev I.M., Il'Inskaya N.D., Usikova A.A., Novikov I.I., Karachinsky L.Y., Kolodeznyi E.S., Bougrov V.E., Egorov A.Y., Portnoi E.L. Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 mu m Spectral Range // Technical Physics Letters - 2018, Vol. 44, No. 2, pp. 174-177 [IF: 0.771, SJR: 0.338]
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  28. 45Dudelev V.V., Losev S.N., Mylnikov V.Y., Babichev A.V., Kognovitskaya E.A., Slipchenko S.O., Lutetskii A.V., Pikhtin N.A., Gladyshev A.G., Karachinskii L.Y., Novikov I.I., Egorov A.Y., Kuchinskii V.I., Sokolovskii G.S. Dual-Frequency Generation in Quantum Cascade Lasers of the 8-mu m Spectral Range // Optics and spectroscopy - 2018, Vol. 125, No. 3, pp. 402-404 [IF: 0.716, SJR: 0.283]
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  29. 44Dudelev V.V., Losev S.N., Mylnikov V.Y., Babichev A.V., Kognovitskaya E.A., Slipchenko S.O., Lyutetskiy A.V., Pikhtin N.A., Gladyshev A.G., Karachinsky L.Y., Novikov I.I., Egorov A.Y., Kuchinskii V.I., Sokolovskii G.S. High Temperature Laser Generation of Quantum-Cascade Lasers in the Spectral Region of 8 um // Physics of the Solid State - 2018, Vol. 60, No. 11, pp. 2291-2294 [IF: 0.86]
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  30. 43Dudelev V.V., Losev S.N., Myl’Nikov V.Y., Babichev A.V., Kognovitskaya E.A., Slipchenko S.O., Lyutetskii A.V., Pikhtin N.A., Gladyshev A.G., Karachinsky L.Y., Novikov I.I., Egorov A.Y., Kuchinskii V.I., Sokolovskii G.S. Turn-on Dynamics of Quantum Cascade Lasers with a Wavelength of 8100 nm at Room Temperature // Technical Physics - 2018, Vol. 63, No. 11, pp. 1656-1658 [IF: 0.632, SJR: 0.297]
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  31. 42Kolodeznyi E.S., Kurochkin A.S., Rochas S.S., Babichev A.V., Novikov I.I., Gladyshev A.G., Karachinsky L.Y., Savelyev A.V., Egorov A.Y., Denisov D.V. On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures // Semiconductors - 2018, Vol. 52, No. 9, pp. 1156-1159 [IF: 0.602, SJR: 0.287]
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  32. 41Kolodeznyi E.S., Rochas S.S., Novikov I.I., Kurochkin A.S., Babichev A.V., Gladyshev A.G., Karachinsky L.Y., Egorov A.Y. Effect of barrier doping on photoluminescence of 1550 nm range multi quantum well heterostructures // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 170
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  33. 40Kurochkin A.S., Babichev A.V., Denisov D.V., Karachinsky L.Y., Novikov I.I., Sofronov A.N., Firsov D.A., Vorobjev L.E., Bousseksou A., Egorov A.Y. Quantum-cascade lasers in the 7-8 um spectral range with full top metallization // Journal of Physics: Conference Series - 2018, Vol. 993, No. 1, pp. 012031 [SJR: 0.21]
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  34. 39Pozina G., Kaliteevski M.A., Nikitina E.V., Gubaydullin A.R., Ivanov K.A., Egorov A.Y. Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells // Semiconductors - 2018, Vol. 52, No. 7, pp. 877-880 [IF: 0.602, SJR: 0.287]
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  35. 38Pozina G.R., Kaliteevski M.A., Nikitina E.V., Gubaydullin A.R., Morozov K.M., Girshova E.I., Ivanov K.A., Egorov A.Y. Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix // Semiconductors - 2018, Vol. 52, No. 14, pp. 1822-1826 [IF: 0.602, SJR: 0.287]
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  36. 37Shchukin V.A., Ledentsov N.N., Kalosha V.P., Ledentsov N.J., Agustin M., Kropp J.R., Maximov M.V., Zubov F.I., Shernyakov Y.M., Payusov A.S., Gordeev N.Y., Kulagina M.M., Zhukov A.E., Egorov A.Y. Virtual cavity in distributed Bragg reflectors // Optics express - 2018, Vol. 26, No. 19, pp. 25280-25292 [IF: 3.307, SJR: 1.394]
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  37. 36Babichev A.V., Denisov D.V., Filimonov A.V., Nevedomsky V.N., Kurochkin A.S., Gladyshev A.G., Karachinsky L.Y., Sokolovskii G.S., Novikov I.I., Bousseksou A., Egorov A.Y. Molecular-beam epitaxy of 7-8 um range quantum-cascade laser heterostructures // Journal of Physics: Conference Series - 2017, Vol. 929, No. 1, pp. 012081 [SJR: 0.21]
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  38. 35Babichev A.V., Gladyshev A.G., Filimonov A.V., Nevedomskii V.M., Kurochkin A.S., Kolodeznyi E.S., Sokolovskii G.S., Bugrov V.E., Karachinsky L.Y., Novikov I.I., Bousseksou A., Egorov A.Y. Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 mum // Technical Physics Letters - 2017, Vol. 43, No. 7, pp. 666-669 [IF: 0.771, SJR: 0.338]
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  39. 34Babichev A.V., Karachinsky L.Y., Novikov I.I., Gladyshev A.G., Blokhin S.A., Mikhailov S., Iakovlev V., Sirbu A., Stepniak G., Chorchos L., Turkiewicz J.P., Voropaev K.O., Ionov A.S., Agustin M., Ledentsov N.N., Egorov A.Y. 6-mW Single-Mode High-Speed 1550-nm Wafer-Fused VCSELs for DWDM Application // IEEE Journal of Quantum Electronics - 2017, Vol. 53, No. 6, pp. 2400808 [IF: 1.852, SJR: 0.661]
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  40. 33Babichev A.V., Karachinsky L.Y., Novikov I.I., Gladyshev A.G., Mikhailov S., Iakovlev V., Sirbu A., Stepniak G., Chorchos L., Turkiewicz J.P., Agustin M., Ledentsov N.N., Voropaev K.O., Ionov A.S., Egorov A.Y. Continuous wave and modulation performance of 1550 nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs // Proceedings of SPIE - 2017, Vol. 10122, pp. 1012208 [SJR: 0.192]
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  41. 32Karachinsky L.Y., Babichev A.V., Gladyshev A.G., Denisov D.V., Filimonov A.V., Novikov I.I., Egorov A.Y. Semiconductor light sources for near- and mid-infrared spectral ranges // Journal of Physics: Conference Series - 2017, Vol. 917, No. 2, pp. 022003 [SJR: 0.21]
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  42. 31Kolodeznyi E.S., Novikov I.I., Babichev A.V., Kurochkin A.S., Gladyshev A.G., Karachinsky L.Y., Gadzhiev I.M., Buyalo M.S., Usikova A.A., Egorov A.Y., Bougrov V.E. 1550 nm mode-locked semiconductor lasers for all-optical analog-to-digital conversion // AIP Conference Proceedings - 2017, Vol. 1874, pp. 040019 [SJR: 0.177]
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  43. 30Kolodeznyi E.S., Novikov I.I., Gladyshev A.G., Rochas S.S., Sharipo K.D., Karachinsky L.Y., Egorov A.Y., Bougrov V.E. Study of antireflection coatings for high-speed 1.3 -1.55 um InGaAs/InP PIN photodetector // Физика и механика материалов = Materials Physics and Mechanics - 2017, Vol. 32, No. 2, pp. 194-197 [SJR: 0.285]
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  44. 29Kozyreva O.A., Solov'Ev V.V., Polukhin I.S., Mikhailov A.K., Mikhailovskiy G.A., Odnoblyudov M.A., Gareev E.Z., Kolodeznyi E.S., Novikov I.I., Karachinsky L.Y., Egorov A.Y., Bougrov V.E. High-speed 1.3 -1.55 um InGaAs/InP PIN photodetector for microwave photonics // Journal of Physics: Conference Series - 2017, Vol. 917, No. 5, pp. 052029 [SJR: 0.21]
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  45. 28Kryzhanovskaya N.V., Moiseev E.I., Gladyshev A.G., Karachinsky L.Y., Novikov I.I., Babichev A.V., Blokhin S.A., Bobrov M.A., Zadiranov Y.M., Troshkov S.I., Egorov A.Y. Lasing of metamorphic hybrid 1300nm spectral band VCSEL under optical pumping up to 120 °C // Proceedings of SPIE - 2017, Vol. 10098, pp. 1009811 [SJR: 0.192]
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  46. 27Kryzhanovskaya N.V., Polubavkina Y.S., Nevedomskiy V.N., Nikitina E.V., Lazarenko A.A., Egorov A.Y., Maximov M.V., Moiseev E.I., Zhukov A.E. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates // Semiconductors - 2017, Vol. 51, No. 2, pp. 267-271 [IF: 0.602, SJR: 0.287]
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  47. 26Novikov I.I., Babichev A.V., Bugrov V.E., Gladyshev A.G., Karachinsky L.Y., Kolodeznyi E.S., Kurochkin A.S., Savelyev A.V., Sokolovskii G.S., Egorov A.Y. The concept for realization of quantum-cascade lasers emitting at 7.5 Mum wavelength // Journal of Physics: Conference Series - 2017, Vol. 929, No. 1, pp. 012082 [SJR: 0.21]
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  48. 25Pozina G., Kaliteevski M.A., Nikitina E.V., Denisov D.V., Polyakov N.K., Pirogov E.V., Goray L., Gubaydullin A.R., Ivanov K.A., Kaliteevskaya N.A., Egorov A.Y. Nonlinear behavior of the emission in the periodic structure of InAs monolayers embedded in a GaAs matrix // Physica status solidi (b) - 2017, Vol. 254, No. 4, pp. 1600402 [IF: 1.674, SJR: 0.51]
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  49. 24Babichev A.V., Bousseksou A., Pikhtin N.A., Tarasov I.S., Nikitina E.V., Sofronov A.N., Firsov D.A., Vorobjev L.E., Novikov I.I., Karachinsky L.Y., Egorov A.Y. Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 mu m // Semiconductors - 2016, Vol. 50, No. 10, pp. 1299–1303 [IF: 0.602, SJR: 0.287]
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  50. 23Babichev A.V., Zhang H., Guan N., Egorov A.Y., Julien F.H., Messanvi A., Durand C., Eymery J., Tchernycheva M. Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact // Semiconductors - 2016, Vol. 50, No. 8, pp. 1097-1101 [IF: 0.602, SJR: 0.287]
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  51. 22Baranov A.I., Kleider J.P., Gudovskikh A.S., Darga A., Nikitina E.V., Egorov A.Y. Deep-level study of Ga(In)P(NAs) alloys grown on Si substrates // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012077 [SJR: 0.21]
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  52. 21Buyalo M.S., Gadzhiyev I.M., Il'Inskaya N.D., Usikova A.A., Nevedomskiy V.N., Egorov A.Y., Portnoi E.L. Mode-locking and Q-switching in 1.06 mu m two-sectional QW lasers due to stark effect // International Conference Laser Optics, LO 2016 - 2016, pp. R37
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  53. 20Egorov A.Y., Karachinsky L.Y., Novikov I.I., Babichev A.V., Nevedomskiy V.N., Bugrov V.E. Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250-1400-nm spectral range // Semiconductors - 2016, Vol. 50, No. 5, pp. 612-615 [IF: 0.602, SJR: 0.287]
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  54. 19Gadzhiyev I.M., Buyalo M.S., Gubenko A.E., Egorov A.Y., Usikova A.A., Il'Inskaya N.D., Lyutetskiy A.V., Zadiranov Y.M., Portnoi E.L. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect // Semiconductors - 2016, Vol. 50, No. 6, pp. 828-831 [IF: 0.602, SJR: 0.287]
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  55. 18Gladyshev A.G., Novikov I.I., Karachinsky L.Y., Denisov D.V., Blokhin S.A., Blokhin A.A., Nadtochiy A.M., Kurochkin A.S., Egorov A.Y. Optical properties of InGaAs/InGaAlAs quantum wells for the 1520-1580 nm spectral range // Semiconductors - 2016, Vol. 50, No. 9, pp. 1186-1190 [IF: 0.602, SJR: 0.287]
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  56. 17Goray L., Egorov A.Y. Breaking the efficiency limit for high-frequency blazed multilayer soft x-ray gratings: Conical vs classical diffraction // Applied Physics Letters - 2016, Vol. 109, No. 10, pp. 103502 [IF: 3.411, SJR: 1.182]
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  57. 16Lazarenko A.A., Nikitina E.V., Pirogov E.V., Sobolev M.S., Egorov A.Y. The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor // Technical Physics Letters - 2016, Vol. 42, No. 3, pp. 284-286 [IF: 0.771, SJR: 0.338]
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  58. 15Nikitina E.V., Gudovskikh A.S., Lazarenko A.A., Pirogov E.V., Sobolev M.S., Zelentsov K.S., Morozov I.A., Egorov A.Y. GaAs/InGaAsN heterostructures for multi-junction solar cells // Semiconductors - 2016, Vol. 50, No. 5, pp. 652-655 [IF: 0.602, SJR: 0.287]
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  59. 14Novikov I.I., Babichev A.V., Kolodeznyi E.S., Kurochkin A.S., Gladyshev A.G., Karachinsky L.Y., Nevedomsky V.N., Blokhin S.A., Blokhin A.A., Nadtochiy A.M., Egorov A.Y. The structural properties of elastically strained InGaAlAs/InGaAs/InP heterostructures grown by molecular beam epitaxy // Физика и механика материалов = Materials Physics and Mechanics - 2016, Vol. 29, No. 1, pp. 76-81 [SJR: 0.285]
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  60. 13Novikov I.I., Karachinsky L.Y., Kolodeznyi E.S., Bougrov V.E., Kurochkin A.S., Gladyshev A.G., Babichev A.V., Gadzhiev I.M., Buyalo M.S., Zadiranov Y.M., Usikova A.A., Shernyakov Y.M., Savelyev A.V., Nyapshaev I.A., Egorov A.Y. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm // Semiconductors - 2016, Vol. 50, No. 10, pp. 1412–1415 [IF: 0.602, SJR: 0.287]
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  61. 12Rasulova G.K., Pentin I.V., Brunkov P.N., Egorov A.Y. Electric-field domain boundary instability in weakly coupled semiconductor superlattices // Journal of Applied Physics - 2016, Vol. 119, No. 20, pp. 204303 [IF: 2.068, SJR: 0.699]
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  62. 11Babichev A.V., Kurochkin A.S., Kolodeznyi E.S., Gladyshev A.G., Novikov I.I., Karachinsky L.Y., Egorov A.Y. Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm // Физика и механика материалов = Materials Physics and Mechanics - 2015, Vol. 24, No. 3, pp. 284-288 [SJR: 0.285]
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  63. 10Buyalo M.S., Gadzhiyev I.M., Usikova A.A., Zadiranov Y.M., Il’Inskaya N.D., Gubenko A.E., Egorov A.Y., Portnoi E.L. Power increase in Q-switched two-sectional quantum well lasers due to Stark effect // Technical Physics Letters - 2015, Vol. 41, No. 10, pp. 984-986 [IF: 0.771, SJR: 0.338]
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  64. 9Egorov A.Y., Babichev A.V., Karachinsky L.Y., Novikov I.I., Nikitina E.V., Tchernycheva M., Sofronov A.N., Firsov D.A., Vorobjev L.E., Pikhtin N.A., Tarasov I.S. Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-µm under current pumping // Semiconductors - 2015, Vol. 49, No. 11, pp. 1527-1530 [IF: 0.602, SJR: 0.287]
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  65. 8Egorov A.Y., Karachinsky L.Y., Novikov I.I., Babichev A.V., Nevedomsky V.M., Bugrov V.E. Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range // Semiconductors - 2015, Vol. 49, No. 11, pp. 1522-1526 [IF: 0.602, SJR: 0.287]
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  66. 7Pozina G.R., Kaliteevski M.A., Nikitina E.V., Denisov D.V., Polyakov N.K., Pirogov E.V., Goray L.I., Gubaydullin A.R., Ivanov K.A., Kaliteevskaya N.A., Egorov A.Y., Clark S.J. Super-radiant mode in InAs-monolayer-based Bragg structures // Scientific Reports - 2015, Vol. 5, pp. 14911 [IF: 4.259, SJR: 1.24]
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  67. 6Shchukin V.A., Ledentsov N.N., Karachinsky L.Y., Blokhin S.A., Novikov I.I., Egorov A.Y., Maximov M.V., Gordeev N.Y., Kulagina M.M., Ustinov V.M. Evidence of negative electrorefraction in type-II GaAs/GaAlAs short-period superlattice // Semiconductor Science and Technology - 2015, Vol. 30, No. 11, pp. 115013 [IF: 2.305, SJR: 0.712]
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  68. 5Zaitsev D.A., Il'Ynskaya N.D., Koudinov A.V., Poletaev N.K., Nikitina E.V., Egorov A.Y., Kavokin A.V., Seisyan R.P. Diffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs // Scientific Reports - 2015, Vol. 5, pp. 11474 [IF: 4.259, SJR: 1.24]
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  69. 4Babichev A.V., Gasumyants V.E., Egorov A.Y., Vitusevich S., Tchernycheva M. Contact properties to CVD-graphene on GaAs substrates for optoelectronic applications // Nanotechnology - 2014, Vol. 25, No. 33, pp. 335707 [IF: 3.44, SJR: 0.926]
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  70. 3Babichev A.V., Zhang H., Lavenus P., Julien F.H., Egorov A.Y., Lin Y.T., Tu L.W., Tchernycheva M. GaN nanowire ultraviolet photodetector with a graphene transparent contact // Applied Physics Letters - 2013, Vol. 103, No. 20, pp. 201103 [IF: 3.411, SJR: 1.182]
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  71. 2Dagnelund D., Stehr J., Egorov A.Y., Chen W.M., Buyanova I.A. Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy // Applied Physics Letters - 2013, Vol. 102, No. 2, pp. 021910 [IF: 3.411, SJR: 1.182]
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  72. 1Zhang H., Babichev A.V., Jacopin G..., Lavenus P., Julien F.H., Egorov A.Y., Zhang J..., Pauporte T..., Tchernycheva M... Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact // Journal of Applied Physics - 2013, Vol. 114, No. 23, pp. 234505 [IF: 2.068, SJR: 0.699]
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