Research Center for Advanced Functional Materials and Laser Communication Systems

Publications

1. 10Breev I.D., Anisimov A.N., Wolfson A.A., Kazarova O.P., Mokhov E.N. Raman scattering in AlN crystals grown by sublimation on SiC and AlN seeds // Semiconductors - 2019, Vol. 53, No. 11, pp. 1558-1561 [IF: 0.602, SJR: 0.287]
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2. 9Soltamov V.A., Kasper C., Poshakinskiy A.V., Anisimov A.N., Mokhov E.N., Sperlich A., Tarasenko S.A., Baranov P.G., Astakhov G.V., Dyakonov V.V. Excitation and coherent control of spin qudit modes in silicon carbide at room temperature // Nature Communications - 2019, Vol. 10, No. 1, pp. 1678 [IF: 12.124, SJR: 5.559]
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3. 8Soltamov V.A., Rabchinskii M.K., Yavkin B.V., Kazarova O.P., Nagalyuk S.S., Davydov V.Y., Smirnov A.N., Lebedev V.F., Mokhov E.N., Orlinskii S.B., Baranov P.G. Properties of AlN single crystals doped with Beryllium via high temperature diffusion // Applied Physics Letters - 2018, Vol. 113, No. 8, pp. 082104 [IF: 3.411, SJR: 1.182]
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4. 7Argunova T.S., Gutkin M.Y., Je J., Kalmykov A.E., Kazarova O., Mokhov E.N., Mikaelyan K.N., Myasoedov A.V., Sorokin L.M., Shcherbachev K.D. Distribution of dislocations near the interface in AIN crystals grown on evaporated SiC substrates // Crystals - 2017, Vol. 7, No. 6, pp. 163 [IF: 1.566, SJR: 0.538]
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5. 6Argunova T.S., Gutkin M.Y., Shcherbachev K.D., Je J.H., Lim J.H., Kazarova O.P., Mokhov E.N. Microstructure and strength of AlN–SiC interface studied by synchrotron X-rays // Journal of Materials Science - 2017, Vol. 52, No. 8, pp. 4244-4252 [IF: 2.599, SJR: 0.813]
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6. 5Mokhov E.N., Argunova T.S., Je J.H., Kazarova O., Shcherbachev K. Freestanding single crystal AlN layers grown using the SiC substrate evaporation method // CrystEngComm - 2017, Vol. 19, No. 23, pp. 3192-3197 [IF: 3.474, SJR: 0.813]
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7. 4Savchenko D., Kalabukhova E., Shanina B., Cichon S., Honolka J., Kiselov V., Mokhov E. Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance // Journal of Applied Physics - 2016, Vol. 119, No. 4, pp. 045701 [IF: 2.068, SJR: 0.699]
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8. 3Savchenko D., Shanina B., Kalabukhova E., Poeppl A., Lancok J., Mokhov E. The spin relaxation of nitrogen donors in 6H SiC crystals as studied by the electron spin echo method // Journal of Applied Physics - 2016, Vol. 119, No. 13, pp. 135706 [IF: 2.068, SJR: 0.699]
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9. 2Simin D., Soltamov V.A., Poshakinskiy A.V., Anisimov A.N., Babunts R.A., Tolmachev D.O., Mokhov E.N., Trupke M., Tarasenko S.A., Sperlich A., Baranov P.G., Dyakonov V., Astakhov G.V. All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide // Physical Review X - 2016, Vol. 6, No. 3, pp. 031014 [IF: 12.789, SJR: 7.94]
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10. 1Argunova T.S., Gutkin M.Y., Mokhov E.N., Kazarova O.P., Lim J.H., Shcheglov M.P. Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates // Physics of the Solid State - 2015, Vol. 57, No. 12, pp. 2473–2478 [IF: 0.86, SJR: 0.346]
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