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Publications
- 11Berdnikov Y., Sibirev N. V. ., Reznik R.R., Redkov A.V. The model for in-plane and out-of-plane growth regimes of semiconductor nanowires // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012049 [SJR: 0.21]
more >> - 10Kukushkin S.A., Sharofidinov S.S., Osipov A.V., Redkov A.V., Kidalov V.V., Grashchenko A.S., Soshnikov I.P., Dyadenchuk A.F. Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of atoms on porous Si substrates (ECS Journal of Solid State Science and Technology (2018) 7 (P480) DOI: 10.1149/2.0191809jss) // ECS Journal of Solid State Science and Technology - 2019, Vol. 8, No. 4, pp. X1 [IF: 1.787, SJR: 0.488]
more >> - 9Sergeeva M.M., Bogdanov S.P., Redkov A.V. Polycrystalline films of phosphors Cd(1-x-y-z) (CuyAgz) ZnxS on the silicon substrate with the silicon carbide buffer layer: structure and properties // Физика и механика материалов = Materials Physics and Mechanics - 2019, Vol. 42, No. 4, pp. 396-406 [SJR: 0.285]
more >> - 8Sharofidinov S.S., Kukushkin S.A., Red’Kov A.V., Grashchenko A.S., Osipov A.V. Growing III–V Semiconductor Heterostructures on SiC/Si Substrates // Technical Physics Letters - 2019, Vol. 45, No. 7, pp. 711-713 [IF: 0.771, SJR: 0.338]
more >> - 7Kidalov V.V., Kukushkin S.A., Osipov A.V., Redkov A.V., Grashchenko A.S., Soshnikov I.P., Boiko M.E., Sharkov M.D., Dyadenchuk A.F. Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates // Физика и механика материалов = Materials Physics and Mechanics - 2018, Vol. 36, No. 1, pp. 39-52 [SJR: 0.285]
more >> - 6Kidalov V.V., Kukushkin S.A., Osipov A.V., Redkov A.V., Grashchenko A.S., Soshnikov I.P., Boiko M.E., Sharkov M.D., Dyadenchuk A.F. Properties of SiC Films Obtained by the Method of Substitution of Atoms on Porous Silicon // ECS Journal of Solid State Science and Technology - 2018, Vol. 7, No. 4, pp. P158-P160 [IF: 1.787, SJR: 0.488]
more >> - 5Koryakin A.A. ., Kukushkin S.A., Redkov A.V. Nucleation of CdSe thin films: the kinetic model // Journal of Physics: Conference Series - 2018, Vol. 1124, No. 2, pp. 022044 [SJR: 0.21]
more >> - 4Kukushkin S.A., Osipov A.V., Redkov A.V., Grashchenko A.S., Feoktistov N.A., Fedotov S.D., Statsenko V., Sokolov E.M., Timoshenkov S.P. A new method for synthesis of epitaxial films of silicon carbide on sapphire substrates (alpha-Al2O3) // Reviews on Advanced Materials Science - 2018, Vol. 57, No. 1, pp. 82-96 [IF: 2.5, SJR: 0.361]
more >> - 3Kukushkin S.A., Sharofidinov S.S., Osipov A.V., Redkov A.V., Kidalov V.V., Grashchenko A.S., Soshnikov I.P., Dydenchuk A.F. The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates // ECS Journal of Solid State Science and Technology - 2018, Vol. 7, No. 9, pp. P480-P486 [IF: 1.787, SJR: 0.488]
more >> - 2Redkov A.V., Kukushkin S.A., Osipov A.V. Spiral growth of a crystal due to chemical reaction // Journal of Physics: Conference Series - 2018, Vol. 1124, No. 2, pp. 022006
more >> - 1Кідалов В.В., Кукушкiн С.А., Осіпов А.В., Редьков А.В., Гращенко А.С., Сошніков I.П., Бойко М.Е., Шарков М.Д., Дяденчук А.Ф. Гетероепітаксійний ріст SiC на підкладках поруватого Si
методом заміщення атомів [Heteroepitaxy growth of SiC on the substrates of Porous Si method of substitution of atoms] // Журнал нано- и электронной физики [Journal of Nano- and Electronic Physics] - 2018. - Т. 10. - № 3. - С. 03026 [SJR: 0.225]
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