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- 9Pozina G., Hemmingsson C., Belonovskii A.V., Levitskii I.V., Mitrofanov M.I., Girshova E.I., Ivanov K.A., Rodin S.N., Morozov K.M., Evtikhiev V.P., Kaliteevski M.A. Emission Properties of GaN Planar Hexagonal Microcavities // Physica Status Solidi (A) Applications and Materials Science - 2020, Vol. 217, No. 14, pp. 1900894 [IF: 1.775, SJR: 0.532]
подробнее >> - 8Lundin W.V., Tsatsul’Nikov A.F., Rodin S.N., Sakharov A.V., Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Evtikhiev V.P. Selective Epitaxy of Submicron GaN Structures // Semiconductors - 2019, Vol. 53, No. 16, pp. 2118-2120 [IF: 0.602, SJR: 0.287]
подробнее >> - 7Sakharov A.V., Usov S.O., Rodin S.N., Lundin W.V., Tsatsulnikov A.F., Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Kaliteevskii M.A., Evtikhiev V.P. Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam // Semiconductors - 2019, Vol. 53, No. 16, pp. 2121-2124 [IF: 0.602, SJR: 0.287]
подробнее >> - 6Levitskii I.V., Mitrofanov M.I., Voznyuk G.V., Nikolaev D.N., Mizerov M.N., Evtikhiev V.P. Effect of annealing FIB-induced defects in GaAs/AlGaAs heterostructure // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 163
подробнее >> - 5Levitskii I.V., Mitrofanov M.I., Voznyuk G.V., Nikolaev D.N., Mizerov M.N., Evtikhiev V.P. Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure // Semiconductors - 2018, Vol. 52, No. 14, pp. 1898-1900 [IF: 0.602, SJR: 0.287]
подробнее >> - 4Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Tatarinov E.E., Rodin S.N., Kaliteevski M.A., Evtikhiev V.P. Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching // Semiconductors - 2018, Vol. 52, No. 7, pp. 954–956 [IF: 0.602, SJR: 0.287]
подробнее >> - 3Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Mizerov M.N., Nikolaev D.N., Evtikhiev V.P. The study of photoluminescence properties of AlGaAs/GaAs heterostructure after Ga+ focused ion beam etching // Journal of Physics: Conference Series - 2018, Vol. 1124, No. 5, pp. 051016 [SJR: 0.21]
подробнее >> - 2Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Nikolaev D.N., Evtikhiev V.P. Effect of Ga+ focused ion beam etching on photoluminescence of AlGaAs/GaAs heterostructure // Journal of Physics: Conference Series - 2018, Vol. 1038, No. 1, pp. 012080
подробнее >> - 1Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Nikolaev D.N., Evtikhiev V.P. Photoluminescence study of AlGaAs/GaAs heterostructure subsequent to Ga+ focused ion beam etching // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 167
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