Сотрудник подразделения
Публикации
- 68Gridchin V.O., Kotlyar K.P., Reznik R.R., Dvoretskaya E.A., Parfen’Eva A.V., Mukhin I.S., Cirlin G.E. Selective-Area Growth of GaN Nanowires on patterned SiOx/Si Substrates by Molecular Beam Epitaxy // Technical Physics Letters - 2020, Vol. 46, No. 11, pp. 1080-1083 [IF: 0.771, SJR: 0.338]
подробнее >> - 67Koval O.Y., Fedorov V.V., Bolshakov A.D., Fedina S., Kochetkov F.M., Neplokh V., Sapunov G.A., Dvoretskaya L.N., Kirilenko D.A., Shtrom I.V., Islamova R.M., Cirlin G.E., Tchernycheva M., Serov A.Y., Mukhin I.S. Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane // Nanomaterials - 2020, Vol. 10, No. 11, pp. 2110 [IF: 3.553, SJR: 0.919]
подробнее >> - 66Leandro L., Reznik R.R., Clement J., Repan J., Reynolds M., Ubyivovk E.V., Shtrom I.V., Cirlin G.E., Akopian N. Wurtzite AlGaAs Nanowires // Scientific Reports - 2020, Vol. 10, No. 1, pp. 735 [IF: 4.259, SJR: 1.24]
подробнее >> - 65Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Kirilenko D.A., Ilkiv I.V., Reznik R.R., Cirlin G.E., Berkovits V.L. Control of Conductivity of In(x)G(a1-x)As Nanowires by Applied Tension and Surface States // Nano Letters - 2019, Vol. 19, No. 7, pp. 4463-4469 [IF: 12.712, SJR: 4.853]
подробнее >> - 64Bai M., Huang H., Liu Z., Zhan T., Xia S., Li X., Sibirev N. V. ., Bouravleuv A., Dubrovskii V.G., Cirlin G. InAs/InP core/shell nanowire gas sensor: Effects of InP shell on sensitivity and long-term stability // Applied Surface Science - 2019, Vol. 498, pp. 143756 [IF: 3.387, SJR: 1.295]
подробнее >> - 63Bolshakov A.D., Fedorov V.V., Shugurov K.Y., Mozharov A.M., Sapunov G.A., Shtrom I.V., Mukhin M.S., Uvarov A.V., Cirlin G.E., Mukhin I.S. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si // Nanotechnology - 2019, Vol. 30, No. 39, pp. 395602 [IF: 3.44, SJR: 0.926]
подробнее >> - 62Bolshakov A.D., Fedorov V.V., Sibirev N.V., Fetisova M.V., Moiseev E.I., Kryzhanovskaya N.V., Koval O.Y., Ubyivovk E.V., Mozharov A.M., Cirlin G.E., Mukhin I.S. Growth and Characterization of GaP/GaPAs Nanowire Heterostructures with Controllable Composition // Physica Status Solidi (RRL)- Rapid Research Letters - 2019, Vol. 13, No. 11, pp. 1900350 [IF: 2.578, SJR: 0.786]
подробнее >> - 61Gridchin V., Kotlyar K.P., Vershinin A.V., Kryzhanovskaya N.V., Pirogov E.V., Semenov A.A., Belyavskiy P.Y., Nashchekin A.V., Cirlin G.E., Soshnikov I.P. ZnO thin films synthesis by RF magnetron sputtering deposition // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012054 [SJR: 0.21]
подробнее >> - 60Grigorieva N.R., Shtrom I.V., Grigoriev R.V., Soshnikov I.P., Reznik R.R., Samsonenko Y.B., Sibirev N. V. ., Cirlin G.E. The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires // Technical Physics Letters - 2019, Vol. 45, No. 8, pp. 835-838 [IF: 0.771, SJR: 0.338]
подробнее >> - 59Khrebtov A.I., Reznik R.R., Ubyivovk E., Litvin A.P., Skurlov I.D., Parfenov P.S., Kulagina A.S., Danilov V.V., Cirlin G.E. Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality // Semiconductors - 2019, Vol. 53, No. 9, pp. 1258-1261 [IF: 0.602, SJR: 0.287]
подробнее >> - 58Koryakin A.A. ., Kukushkin S.A., Kotlyar K.P., Ubyivovk E., Reznik R.R., Cirlin G.E. A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires // CrystEngComm - 2019, Vol. 21, No. 32, pp. 4707-4717 [IF: 3.474, SJR: 0.813]
подробнее >> - 57Kotlyar K.P., Vershinin A.V., Reznik R.R., Pavlov S.I., Kudryashov D.A., Zelentsov K.S., Mozharov A.M., Karaborchev A.A., Mukhin I.S., Soshnikov I.P., Cirlin G.E. Photovoltaic properties of InP NWs/p-Si heterostructure // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012060 [SJR: 0.21]
подробнее >> - 56Reznik R.R., Kotlyar K.P., Khrebtov A.I., Kryzhanovskaya N.V., Cirlin G.E. InGaN nanostructures of a branched morphology on silicon substrate: MBE synthesis and properties // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012052 [SJR: 0.21]
подробнее >> - 55Reznik R.R., Kotlyar K.P., Kryzhanovskaya N.V., Morozov S.V., Cirlin G.E. Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate // Technical Physics Letters - 2019, Vol. 45, No. 11, pp. 1111-1113 [IF: 0.771, SJR: 0.338]
подробнее >> - 54Reznik R.R., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Talalaev V.G., Cirlin G.E. The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers // AIP Conference Proceedings - 2019, Vol. 2064, pp. 040004 [SJR: 0.177]
подробнее >> - 53Sharov V.A., Alekseev P.A., Borodin B.R., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. InP/Si Heterostructure for High-Current Hybrid Triboelectric/Photovoltaic Generation // ACS Applied Energy Materials - 2019, Vol. 2, No. 6, pp. 4395-4401 [SJR: 1.833]
подробнее >> - 52Sharov V.A., Alekseev P.A., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. Triboelectric current generation in InP // Journal of Physics: Conference Series - 2019, Vol. 1400, No. 6, pp. 066055 [SJR: 0.21]
подробнее >> - 51 Fedorov V.V., Bolshakov A.D., Kirilenko D.A., Mozharov A.M., Sitnikova A.A., Sapunov G.A., Dvoreckaia L.N., Shtrom I.V., Cirlin G.E., Mukhin I.S. Droplet epitaxy mediated growth of GaN nanostructures on Si (111): via plasma-assisted molecular beam epitaxy // CrystEngComm - 2018, Vol. 20, No. 24, pp. 3370-3380 [IF: 3.474, SJR: 0.813]
подробнее >> - 50Alekseev P.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Smirnov A.N., Kirilenko D.A., Davydov V.Y., Berkovits V.L. Unified mechanism of the surface Fermi level pinning in III-As nanowires // Nanotechnology - 2018, Vol. 29, No. 31, pp. 314003 [IF: 3.44, SJR: 0.926]
подробнее >> - 49Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Berkovits V.L. Electromechanical Switch Based on InxGa1-xAs Nanowires // Semiconductors - 2018, Vol. 52, No. 14, pp. 1833-1835 [IF: 0.602, SJR: 0.287]
подробнее >> - 48Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Lysak V.V., Cirlin G.E., Reznik R.R., Khrebtov A.I., Soshnikov I.P., Lahderanta E. Piezoelectric current generation in wurtzite GaAs nanowires // Physica Status Solidi (RRL)- Rapid Research Letters - 2018, Vol. 12, No. 1, pp. 1700358 [IF: 2.578, SJR: 0.786]
подробнее >> - 47Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Soshnikov I.P., Reznik R.R., Lisak V., Lahderanta E., Cirlin G.E. GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells // Semiconductors - 2018, Vol. 52, No. 5, pp. 609-611 [IF: 0.602, SJR: 0.287]
подробнее >> - 46Bolshakov A.D., Fedorov V.V., Sapunov G.A., Mozharov A.M., Dvoretckaia L.N., Shugurov K.U., Shkoldin V.A., Shtrom I.V., Mukhin M.S., Cirlin G.E., Mukhin I.S. GaN nanowires on Si (111) substrates via molecular beam epitaxy: growth, electronic and optical properties // Journal of Physics: Conference Series - 2018, Vol. 1092, No. 1, pp. 012013 [SJR: 0.21]
подробнее >> - 45Bolshakov A.D., Mozharov A.M., Sapunov G.A., Shtrom I.V., Sibirev N.V., Fedorov V.V., Ubyivovk E.V., Tchernycheva M., Cirlin G.E., Mukhin I.S. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy // Beilstein Journal of Nanotechnology - 2018, Vol. 9, pp. 146-154 [IF: 3.127, SJR: 0.721]
подробнее >> - 44Bourauleuv A.D., Ilkiv I., Reznik R.R., Kotlyar K.P., Soshnikov I., Cirlin G.E., Brunkov P.N., Kirilenko D.A., Bondarenko L.V., Nepomniaschiy A., Gruznev D.V., Zotov A.V., Saranin A.A., Dhaka V., Lipsanen H. New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles // Nanotechnology - 2018, Vol. 29, No. 4, pp. 045602 [IF: 3.44, SJR: 0.926]
подробнее >> - 43Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Samsonenko Y.B., Kukushkin S.A., Kasama T., Akopian N., Leonardo L. Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources // Semiconductors - 2018, Vol. 52, No. 4, pp. 462-464 [IF: 0.602, SJR: 0.287]
подробнее >> - 42Petrov P.V., Kokurin I.A., Ivanov Y.L., Cirlin G.E., Sedov V.E., Averkiev N.S. Fine Structure of Levels and Piezospectroscopy of A+ Centers in GaAs/AlGaAs Quantum Wells // Physics of the Solid State - 2018, Vol. 60, No. 2, pp. 339-346 [IF: 0.86, SJR: 0.346]
подробнее >> - 41Reznik R.R., Cirlin G.E., Shtrom I.V., Khrebtov A.I., Soshnikov I.P., Kryzhanovskaya N.V., Moiseev E.I., Zhukov A.E. Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy // Technical Physics Letters - 2018, Vol. 44, No. 2, pp. 112-114 [IF: 0.771, SJR: 0.338]
подробнее >> - 40Reznik R.R., Kotlyar K.P., Il’Kiv I.V., Khrebtov A.I., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. MBE Growth and Optical Properties of GaN, InN, and A(3)B(5) Nanowires on SiC/Si(111) Hybrid Substrate // Advances in Condensed Matter Physics - 2018, pp. 1040689 [IF: 1.044, SJR: 0.314]
подробнее >> - 39Reznik R.R., Kotlyar K.P., Kukushkin S.A., Osipov A.V., Soshnikov I.P., Nikitina E.V., Cirlin G.E. MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 382
подробнее >> - 38Reznik R.R., Kotlyar K.P., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E. MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates // Semiconductors - 2018, Vol. 52, No. 5, pp. 651-653 [IF: 0.602, SJR: 0.287]
подробнее >> - 37Reznik R.R., Kryzhanovskaya N.V., Zhukov A.E., Khrebtov A.I., Samsonenko Y.B., Morozov S.V., Cirlin G.E. Structural properties of multilayer heterostructure for quantum-cascade lasers grown by MBE growth // Journal of Physics: Conference Series - 2018, Vol. 1124, No. 2, pp. 022005 [SJR: 0.21]
подробнее >> - 36Reznik R.R., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Zeze D., Cirlin G.E. MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate // Journal of Physics: Conference Series - 2018, Vol. 1038, No. 1, pp. 012063 [SJR: 0.21]
подробнее >> - 35Shtrom I.V., Filosofov N.G., Agekian V.F., Smirnov M.B., Serov A.Y., Reznik R.R., Kudryavtsev K.E., Cirlin G.E. Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate // Semiconductors - 2018, Vol. 52, No. 5, pp. 602-604 [IF: 0.602, SJR: 0.287]
подробнее >> - 34Shtrom I.V., Sibirev N.V., Ubiivovk E.V., Samsonenko Y.B., Khrebtov A.I., Reznik R.R., Bouravleuv A.D., Cirlin G.E. GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases // Semiconductors - 2018, Vol. 52, No. 1, pp. 1-5 [IF: 0.602, SJR: 0.287]
подробнее >> - 33Soshnikov I.P., Kotlyar K.P., Bert N.A., Kirilenko D.A., Bouravleuv A.D., Cirlin G.E. The Features of GaAs Nanowire SEM Images // Semiconductors - 2018, Vol. 52, No. 5, pp. 605-608 [IF: 0.602, SJR: 0.287]
подробнее >> - 32Timofeeva M., Lang L., Timpu F., Renaut C., Bouravleuv A., Shtrom I., Cirlin G.E., Grange R. Anapoles in Free-Standing III-V Nanodisks Enhancing Second-Harmonic Generation // Nano Letters - 2018, Vol. 18, No. 6, pp. 3695-3702 [IF: 12.712, SJR: 4.853]
подробнее >> - 31Trukhin V.N., Bouravleuv A.D., Mustafin I.A., Cirlin G.E., Kakko J.P., Lipsanen H. Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires // Semiconductors - 2018, Vol. 52, No. 1, pp. 19-23 [IF: 0.602, SJR: 0.287]
подробнее >> - 30Штром И.В., Сибирев Н.В., Убыйвовк Е.В., Самсоненко Ю.Б., Хребтов А.И., Резник Р.Р., Буравлев А.Д., Цырлин Г.Э. XXI международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2017 г. Нитевидные нанокристаллы GaP/Si(111), синтезированные методом молекулярно-пучковой эпитаксии с переключением гексагональной и кубической фазy // Физика и техника полупроводников - 2018. - Т. 52. - № 1. - С. 5-9 [IF: 0.745]
подробнее >> - 29Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Soshnikov I.P., Kukushkin S.A., Leandro L., Kasama T., Akopian N. AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates // Journal of Physics D: Applied Physics - 2017, Vol. 50, No. 48, pp. 484003 [IF: 2.588, SJR: 0.857]
подробнее >> - 28Ilkiv I., Kotlyar K., Amel'Chuk D., Lebedev S.P., Cirlin G.E., Bouravleuv A.D. Thermal penetration of gold nanoparticles into silicon dioxide // Acta Physica Polonica A - 2017, Vol. 132, No. 2, pp. 366-368 [IF: 0.469, SJR: 0.217]
подробнее >> - 27Mozharov A.M., Komissarenko F.E., Bolshakov A.D., Fedorov V.V., Sapunov G.A., Cirlin G.E., Mukhin I.S. Modeling the semiconductor devices with negative differential resistance based on nitride nanowires // Journal of Physics: Conference Series - 2017, Vol. 917, No. 8, pp. 082017 [SJR: 0.21]
подробнее >> - 26Reznik R.R., Kotlyar K.P., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E. MBE Growth of Ultrathin III–V Nanowires on a Highly Mismatched SiC/Si(111) Substrate // Semiconductors - 2017, Vol. 51, No. 11, pp. 1472–1476 [IF: 0.602, SJR: 0.287]
подробнее >> - 25Reznik R.R., Kotlyar K.P., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate // Journal of Physics: Conference Series - 2017, Vol. 917, No. 3, pp. 032014 [SJR: 0.21]
подробнее >> - 24Reznik R.R., Kryzhanovskaya N.V., Zubov F.I., Zhukov A.E., Khabibullin R.A., Morozov S.V., Cirlin G.E. MBE growth, structural and optical properties of multilayer heterostructures for quantum-cascade lasers // Journal of Physics: Conference Series - 2017, Vol. 917, No. 5, pp. 052012 [SJR: 0.21]
подробнее >> - 23Reznik R.R., Shtrom I.V., Samsonenko Y.B., Khrebtov A.I., Soshnikov I.P., Cirlin G.E. The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate // Journal of Physics: Conference Series - 2017, Vol. 929, No. 1, pp. 012047 [SJR: 0.21]
подробнее >> - 22Vasiliev A.A., Mozharov A.M., Komissarenko F.E., Cirlin G.E., Bouravlev D.A., Mukhin I.S. Researching the electrical properties of single A3B5 nanowires // Journal of Physics: Conference Series - 2017, Vol. 917, No. 3, pp. 032042 [SJR: 0.21]
подробнее >> - 21Bolshakov A.D., Sapunov G.A., Mozharov A.M., Cirlin G.E., Shtrom I.V., Mukhin I.S. Synthesis of GaN nanowires on Si (111) substrates by molecular beam epitaxy // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012044 [SJR: 0.21]
подробнее >> - 20Bouravleuv A.D., Cirlin G.E., Reznik R.R., Khrebtov A.I., Samsonenko Y.B., Werner P.E., Soshnikov I.P., Savin A.M., Lipsanen H.K. Growth and properties of self-catalyzed (In,Mn)As nanowires // Physica Status Solidi (RRL)- Rapid Research Letters - 2016, Vol. 10, No. 7, pp. 554-557 [IF: 2.578, SJR: 0.786]
подробнее >> - 19Cirlin G.E., Buyskhih A.S., Bouravlev A.D., Samsonenko Y.B., Kaliteevski M.A., Gallant A.J., Zeze D.A. . Investigation of non-equilibrium electron-hole plasma in nanowires by THz spectroscopy // Оптика и спектроскопия - 2016, Vol. 120, No. 5, pp. 796-801 [IF: 0.484]
подробнее >> - 18Cirlin G.E., Buyskikh A.S., Bouravleuv A.D., Samsonenko Y.B., Kaliteevski M.A., Gallant A.J., Zeze D.A. Investigation of non-equilibrium electron-hole plasma in nanowires by THz spectroscopy // Optics and spectroscopy - 2016, Vol. 120, No. 5, pp. 751-755 [IF: 0.716, SJR: 0.283]
подробнее >> - 17Gonzalez-Diaz B., Guerrero-Lemus R., Del Canizo C., Garcia-Tabares E., Rey-Stolle I., Granek F., Korte L., Tucci M., Rath J., Singh U.P., Todorov T., Gunawan O., Plaza J.L., Rubio S., Dieguez E., Cirlin G.E., Hoffmann B., Christiansen S., Ramanujam J., Verma A. Inorganic Photovoltaics - Planar and Nanostructured Devices // Progress in Materials Science - 2016, No. 82, pp. 294-404 [IF: 31.14, SJR: 9.172]
подробнее >> - 16Lysak V., Soshnikov I.P., Lahderanta E.E., Cirlin G.E. Piezoelectric effect in GaAs nanowires: experiment and theory // Physica Status Solidi (RRL)- Rapid Research Letters - 2016, Vol. 10, No. 2, pp. 172-175 [IF: 2.578, SJR: 0.786]
подробнее >> - 15Lysak V.V., Soshnikov I.P., Lahderanta E.E., Cirlin G.E. Piezoelectric effect in wurtzite GaAs nanowires: Growth, characterization, and electromechanical 3D modeling // Physica Status Solidi (A) Applications and Materials Science - 2016, Vol. 213, No. 11, pp. 3014-3019 [IF: 1.775, SJR: 0.532]
подробнее >> - 14Mozharov A.M., Bolshakov A.D., Cirlin G.E., Kudryashov D.A., Gudovskikh A., Mukhin I.S., Alferov Z.I. Simulation of photovoltaic efficiency of a tandem solar cell on Si with GaN nanowires as an emitter layer // Journal of Physics: Conference Series - 2016, Vol. 690, No. 1, pp. 012041 [SJR: 0.21]
подробнее >> - 13Mozharov A.M., Komissarenko F.E., Vasiliev A.A., Bolshakov A.D., Moiseev E.I., Mukhin M.S., Cirlin G.E., Mukhin I.S. Study of electrical properties of single GaN nanowires grown by molecular beam epitaxy // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012002 [SJR: 0.21]
подробнее >> - 12Neplokh V., Ali A., Julien F.H., Foldyna M.F., Mukhin I.S., Cirlin G.E., Harmand J.C., Gogneau N., Tchernycheva M. Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates // Materials Science in Semiconductor Processing - 2016, Vol. 55, pp. 72-78 [IF: 2.359, SJR: 0.695]
подробнее >> - 11Reznik R.R., Kotlyar K., Ilkiv I., Soshnikov I., Kukushkin S.A., Osipov A.V., Nikitina E., Cirlin G. MBE Growth and Optical Properties of GaN Nanowires on SiC/Si(111) Hybrid Substrate // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040003 [SJR: 0.177]
подробнее >> - 10Reznik R.R., Kotlyar K.P., Ilkiv I.V., Kukushkin S.A., Osipov A.V., Soshnikov I.P., Nikitina E.V., Cirlin G.E. MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate // International Conference Laser Optics, LO 2016 - 2016, pp. R92
подробнее >> - 9Reznik R.R., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012027 [SJR: 0.21]
подробнее >> - 8Zhukov A.E., Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kaliteevski M.A., Ivanov K.A., Kryzhanovskaya N.V., Maximov M.V., Alferov Z.I. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range // Semiconductors - 2016, Vol. 50, No. 5, pp. 662-666 [IF: 0.602, SJR: 0.287]
подробнее >> - 7Reznik R.R., Kotlyar K., Khrebtov A.I., Samsonenko Y.B., Soshnikov I.P., Dyakonov V., Zadiranov U., Tankelevskaya E., Kudryashov D.A., Shevchuk D.S., Cirlin G.E. Development of methods for orderly growth of nanowires // Journal of Physics: Conference Series - 2015, Vol. 661, No. 1, pp. 012053 [SJR: 0.21]
подробнее >> - 6Bourauleuv A.D., Sibirev N.V., Gilstein E.P., Brunkov P.N., Mukhin I.S., Tchernycheva M., Khrebtov A.I., Samsonenko Y.B., Cirlin G.E. Study of the electrical properties of individual (Ga, Mn)As nanowires // Semiconductors - 2014, Vol. 48, No. 3, pp. 344-349 [IF: 0.602, SJR: 0.287]
подробнее >> - 5Trukhin V.N., Bourauleuv A.D., Dhaka V.D., Cirlin G.E., Mustafin I., Kaliteevski M.A., Lipsanen H.K., Samsonenko Y.B. Ultrafast carrier dynamics in GaAs Nanowires // Lithuanian Journal of Physics - 2014, Vol. 54, No. 1, pp. 41-45 [IF: 0.537, SJR: 0.269]
подробнее >> - 4Blokhin S.A., Nadtochiy A.M., Krasivichev A.A., Karachinsky L.Y., Vasil'Ev A.P., Nevedomskiy V.N., Maximov M.V., Cirlin G.E., Buravlev A.D., Maleev N.A., Ledentsov N.N., Ustinov V.M., Zhukov A.E. Optical anisotropy of InGaAs quantum dots // Semiconductors - 2013, Vol. 47, No. 1, pp. 85-89 [IF: 0.602, SJR: 0.287]
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