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Публикации
- 18Eliseyev I.A., Davydov V.Y., Smirnov A.N., Nestoklon M.O., Dementev P.A., Lebedev S.P., Lebedev A.A., Zubov A.V., Mathew S., Pezoldt J., Bokai K., Usachov D.Y. Optical estimation of the carrier concentration and the value of strain in monolayer graphene grown on 4H-SiC // Semiconductors - 2019, Vol. 53, No. 14, pp. 1904-1909 [IF: 0.602, SJR: 0.287]
подробнее >> - 17Goloudina S.I., Luchinin V.V., Pasyuta V.M., Smirnov A.N., Kirilenko D.A., Sevost’Yanov E.N., Konoplev G.A., Andryushkin V.V., Sklizkova V.P., Gofman I.V., Svetlichnyi V.M., Kudryavtsev V.V. Formation of Highly Conducting Optically Transparent Films with Multigraphene Structure via Carbonization of Polyimide Langmuir–Blodgett Films // Technical Physics Letters - 2019, Vol. 45, No. 5, pp. 471-474 [IF: 0.771, SJR: 0.338]
подробнее >> - 16Alekseev P.A., Borodin B.R., Dunaevskii M.S., Smirnov A.N., Davydov V.Y., Lebedev S.P., Lebedev A.A. Local Anodic Oxidation of Graphene Layers on SiC // Technical Physics Letters - 2018, Vol. 44, No. 5, pp. 381-383 [IF: 0.771, SJR: 0.338]
подробнее >> - 15Alekseev P.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Smirnov A.N., Kirilenko D.A., Davydov V.Y., Berkovits V.L. Unified mechanism of the surface Fermi level pinning in III-As nanowires // Nanotechnology - 2018, Vol. 29, No. 31, pp. 314003 [IF: 3.44, SJR: 0.926]
подробнее >> - 14Butko A.V., Butko V.Y., Lebedev S.P., Lebedev A.A., Davydov V.Y., Smirnov A.N., Eliseyev I.A., Dunaevskiy M., Kumzerov Y.A. State memory in solution gated epitaxial graphene // Applied Surface Science - 2018, Vol. 444, pp. 36-41 [IF: 3.387, SJR: 1.295]
подробнее >> - 13Gomoyunova M.V., Grebenyuk G.S., Davydov V.Y., Ermakov I.A., Eliseyev I.A., Lebedev A.A., Lebedev S.P., Lobanova E.Y., Smirnov A.N., Smirnov D.A., Pronin I.I. Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide // Physics of the Solid State - 2018, Vol. 60, No. 7, pp. 1439-1446 [IF: 0.86, SJR: 0.346]
подробнее >> - 12Lebedev A.A., Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Eliseyev I.A., Dunaevskiy M.S., Gushchina E.V., Bokai K., Pezoldt J. High Quality Graphene Grown by Sublimation on 4H-SiC (0001) // Semiconductors - 2018, Vol. 52, No. 14, pp. 1882-1885 [IF: 0.602, SJR: 0.287]
подробнее >> - 11Lebedev A.A., Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Alekseev P.A., Dunaevskiy M.S., Rybkin A.G., Novikov S.V., Makarov Y.N. Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method // Journal of Physics: Conference Series - 2018, Vol. 951, No. 1, pp. 012007 [SJR: 0.21]
подробнее >> - 10Lebedev S.P., Davydov V.Y., Usachov D.Y., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Guschina E.V., Dunaevsckiy M.S., Vilkov O.Y., Rybkin A.G., Lebedev A.A., Novikov S.N., Makarov Y.N. Graphene on silicon carbide as a basis for gas- and biosensor applications // Наносистемы: Физика, химия, математика = Nanosystems: Physics, Chemistry, Mathematics - 2018, Vol. 9, No. 1, pp. 95-97
подробнее >> - 9Davydov V.Y., Usachov D.Y., Lebedev S.P., Smirnov A.N., Levitskii V.S., Eliseyev I.A., Alekseev P.A., Dunaevskiy M.S., Vilkov O.Y., Rybkin A.G., Lebedev A.A. Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) // Semiconductors - 2017, Vol. 51, No. 8, pp. 1072-1080 [IF: 0.602, SJR: 0.287]
подробнее >> - 8Lebedev S.P., Eliseyev I.A., Davydov V.Y., Smirnov A.N., Levitskii V.S., Mynbaeva M.G., Kulagina M.M., Hahnlein B., Pezoldt J., Lebedev A.A. Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium // Technical Physics Letters - 2017, Vol. 43, No. 9, pp. 849-852 [IF: 0.771, SJR: 0.338]
подробнее >> - 7Butko A.V., Butko V.Y., Lebedev S.P., Smirnov A.N., Davydov V.Y., Lebedev A.A., Kumzerov Y.A. Transport properties of graphene in the region of its interface with water surface // Physics of the Solid State - 2016, Vol. 58, No. 7, pp. 1483-1486 [IF: 0.86, SJR: 0.346]
подробнее >> - 6Lebedev A.A., Lebedev S.P., Novikov S.N., Davydov V.Y., Smirnov A.N., Litvin D.P., Makarov Y.N., Levitskii V.S. Supersensitive graphene-based gas sensor // Technical Physics - 2016, Vol. 61, No. 3, pp. 453-457 [IF: 0.632, SJR: 0.297]
подробнее >> - 5Nikolaev V.I., Pechnikov A.I., Stepanov S.I., Nikitina I.P., Smirnov A.N., Chikiryaka A.V., Sharofidinov S.S., Bougrov V.E., Romanov A.E. Epitaxial growth of (2-01) Beta-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy // Materials Science in Semiconductor Processing - 2016, Vol. 47, pp. 16-19 [IF: 2.359, SJR: 0.695]
подробнее >> - 4Nikolaev V.I., Pechnikov A.I., Stepanov S.I., Sharofidinov S.S., Golovatenko A.A., Nikitina I.P., Smirnov A.N., Bugrov V.E., Romanov A.E., Brunkov P.N., Kirilenko D.A. Chloride epitaxy of beta-Ga2O3 layers grown on c-sapphire substrates // Semiconductors - 2016, Vol. 50, No. 7, pp. 980-983 [IF: 0.602, SJR: 0.287]
подробнее >> - 3Sharofidinov S.S., Nikolaev V.I., Smirnov A.N., Chikiryaka A.V., Nikitina I.P., Odnoblyudov M.A., Bougrov V.E., Romanov A.E. On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy // Semiconductors - 2016, Vol. 50, No. 4, pp. 541-544 [IF: 0.602, SJR: 0.287]
подробнее >> - 2Николаев В.И., Печников А.И., Степанов С.И., Шарофидинов Ш.Ш., Головатенко А.А., Никитина И.П., Смирнов А.Н., Бугров В.Е., Романов А.Е., Брунков П.Н., Кириленко Д.А. Хлоридная эпитаксия слоев beta-Ga2O3 на сапфировых подложках базисной ориентации // Физика и техника полупроводников - 2016. - Т. 50. - № 7. - С. 997-1000 [IF: 0.745]
подробнее >> - 1Шарофидинов Ш.Ш., Николаев В.И., Смирнов А.Н., Чикиряка А.В., Никитина И.П., Одноблюдов М.А., Бугров В.Е., Романов А.Е. Снижение трещинообразования при росте ALN на подложках Si методом хлоридно-гидридной эпитаксии // Физика и техника полупроводников - 2016. - Т. 50. - № 4. - С. 549-552 [IF: 0.745]
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