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Публикации

  1. 14Leandro L., Reznik R.R., Clement J., Repan J., Reynolds M., Ubyivovk E.V., Shtrom I.V., Cirlin G.E., Akopian N. Wurtzite AlGaAs Nanowires // Scientific Reports - 2020, Vol. 10, No. 1, pp. 735 [IF: 4.259, SJR: 1.24]
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  2. 13Berdnikov Y.S., Sibirev N. V. ., Khayrudinov V., Alaferdov A., Moshkalev S., Ubyivovk E., Lipsanen H., Bouravleuv A. Growth of GaAs Nanowire–Graphite Nanoplatelet Hybrid Structures // CrystEngComm - 2019, Vol. 21, No. 41, pp. 6165-6172 [IF: 3.474, SJR: 0.813]
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  3. 12Bolshakov A.D., Fedorov V.V., Sibirev N.V., Fetisova M.V., Moiseev E.I., Kryzhanovskaya N.V., Koval O.Y., Ubyivovk E.V., Mozharov A.M., Cirlin G.E., Mukhin I.S. Growth and Characterization of GaP/GaPAs Nanowire Heterostructures with Controllable Composition // Physica Status Solidi (RRL)- Rapid Research Letters - 2019, Vol. 13, No. 11, pp. 1900350 [IF: 2.578, SJR: 0.786]
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  4. 11Goray L., Pirogov E.V., Nikitina E.V., Ubyivovk E.V., Gerchikov L.G., Ipatov A.N., Dashkov A.S., Sobolev M.S., Ilkiv I.V., Bouravlev A.D. Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures // Semiconductors - 2019, Vol. 53, No. 14, pp. 1914-1917 [IF: 0.602, SJR: 0.287]
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  5. 10Khrebtov A.I., Reznik R.R., Ubyivovk E., Litvin A.P., Skurlov I.D., Parfenov P.S., Kulagina A.S., Danilov V.V., Cirlin G.E. Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality // Semiconductors - 2019, Vol. 53, No. 9, pp. 1258-1261 [IF: 0.602, SJR: 0.287]
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  6. 9Koryakin A.A. ., Kukushkin S.A., Kotlyar K.P., Ubyivovk E., Reznik R.R., Cirlin G.E. A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires // CrystEngComm - 2019, Vol. 21, No. 32, pp. 4707-4717 [IF: 3.474, SJR: 0.813]
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  7. 8Seppanen H., Kim I., Etula J., Ubyivovk E.V., Bouravleuv A., Lipsanen H. Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition // Materials - 2019, Vol. 12, No. 3, pp. 406 [IF: 2.654, SJR: 0.682]
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  8. 7Sibirev N. V. ., Huang C., Ubyivovk E.V., Lv R., Zhao D., Guang Q., Berdnikov Y.S., Yan X., Koryakin A.A. ., Shtrom I.V. Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts // Technical Physics Letters - 2019, Vol. 45, No. 2, pp. 159-162 [IF: 0.771, SJR: 0.338]
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  9. 6Bolshakov A.D., Mozharov A.M., Sapunov G.A., Shtrom I.V., Sibirev N.V., Fedorov V.V., Ubyivovk E.V., Tchernycheva M., Cirlin G.E., Mukhin I.S. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy // Beilstein Journal of Nanotechnology - 2018, Vol. 9, pp. 146-154 [IF: 3.127, SJR: 0.721]
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  10. 5Boltynjuk E., Gunderov D.V., Ubyivovk E.V., Monclus M.A., Yang L.W., Molina-Aldareguia J.M., Tyurin A.I., Kilmametov A.R., Churakova A.A., Churakova A.Y., Valiev R.Z. Enhanced strain rate sensitivity of Zr-based bulk metallic glasses subjected to high pressure torsion // Journal of Alloys and Compounds - 2018, Vol. 747, pp. 595-602 [IF: 3.133, SJR: 1.112]
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  11. 4Orlova T.S., Mavlyutov A.M., Latynina T.A., Ubyivovk E.V., Murashkin М.Y., Schneider R., Gerthsen D., Valiev R.Z. Influence of severe plastic deformation on microstructure, strength and electrical conductivity of aged Al–0.4Zr(wt.%) alloy // Reviews on Advanced Materials Science - 2018, Vol. 55, No. 1-2, pp. 92-101 [IF: 2.5, SJR: 0.361]
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  12. 3Petukhova Y.V., Mosiagin I.P., Mezenov I.A., Sarnovskiy-Gonzalez A.D., Ubiivovk E.V., Bobrysheva N.P., Levin O.V., Osmolowsky M.G., Osmolovskaya O.M. Fabrication of composite nanoparticles based on VO2with given structure and its optical and electrochemical performance // Journal of Physics and Chemistry of Solids - 2018, Vol. 121, pp. 128-138 [IF: 2.059, SJR: 0.741]
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  13. 2Shtrom I.V., Sibirev N.V., Ubiivovk E.V., Samsonenko Y.B., Khrebtov A.I., Reznik R.R., Bouravleuv A.D., Cirlin G.E. GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases // Semiconductors - 2018, Vol. 52, No. 1, pp. 1-5 [IF: 0.602, SJR: 0.287]
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  14. 1Штром И.В., Сибирев Н.В., Убыйвовк Е.В., Самсоненко Ю.Б., Хребтов А.И., Резник Р.Р., Буравлев А.Д., Цырлин Г.Э. XXI международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2017 г. Нитевидные нанокристаллы GaP/Si(111), синтезированные методом молекулярно-пучковой эпитаксии с переключением гексагональной и кубической фазy // Физика и техника полупроводников - 2018. - Т. 52. - № 1. - С. 5-9 [IF: 0.745]
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