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Публикации
- 9Bazhenov N.L., Mynbaev K.D., Semakova A.A., Zegrya G.G. Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies // Semiconductors - 2019, Vol. 53, No. 4, pp. 428-433 [IF: 0.602, SJR: 0.287]
подробнее >> - 8Izhnin I.I., Izhnin A.I., Fitsych O.I., Voitsekhovskii A.V., Gorn D.I., Semakova A.A., Bazhenov N.L., Mynbaev K.D., Zegrya G.G. Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures // Applied Nanoscience - 2019, Vol. 9, No. 5, pp. 617-622 [IF: 3.325, SJR: 0.583]
подробнее >> - 7Semakova A.A., Lipnitskaya S.N., Bazhenov N.L., Kizhaev S.S., Chernyaev A.V., Stoyanov N.D., Mynbaev K.D. Spontaneous and stimulated emission in InAs-based LED heterostructures // Journal of Physics: Conference Series - 2019, Vol. 1400, No. 6, pp. 066044 [SJR: 0.21]
подробнее >> - 6Semakova A.A., Bazhenov N.L., Mynbaev K.D. Carrier lifetime in InAs(Ga,Sb,P) heterostructures // Journal of Physics: Conference Series - 2018, Vol. 1038, No. 1, pp. 012097 [SJR: 0.21]
подробнее >> - 5Semakova A.A., Bazhenov N.L., Mynbaev K.D. Luminescence of HgCdTe- and InAsSb-based quantum-well heterostructures // Journal of Physics: Conference Series - 2018, Vol. 1135, No. 1, pp. 012072 [SJR: 0.21]
подробнее >> - 4Mynbaev K.D., Bazhenov N.L., Semakova A.A., Chernyaev A.V., Kizhaev S.S., Stoyanov N.D., Bougrov V.E., Lipsanen H.K., Salikhov K. Spontaneous and stimulated emission in InAsSb-based LED heterostructures // Infrared Physics and Technology - 2017, Vol. 85, pp. 246-250 [IF: 1.713, SJR: 0.542]
подробнее >> - 3Mynbaev K.D., Bazhenov N.L., Semakova A.A., Mikhailova M.P., Stoyanov N.D., Kizhaev S.S., Molchanov S.S., Astakhova A.P., Chernyaev A.V., Lipsanen H., Bougrov V.E. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K // Semiconductors - 2017, Vol. 51, No. 2, pp. 239-244 [IF: 0.602, SJR: 0.287]
подробнее >> - 2Mynbaev K.D., Shilyaev A.V., Semakova A.A., Bykhanova E.V., Bazhenov N.L. Luminescence of II–VI and III–V nanostructures // Opto-electronics Review - 2017, Vol. 25, No. 3, pp. 209-214 [IF: 1.449, SJR: 0.453]
подробнее >> - 1Semakova A.A., Mynbaev K.D., Bazhenov N.L., Chernyaev A.V., Kizhaev S.S., Stoyanov N.D. Electroluminescence of InAsSb-based mid-infrared LEDs in 4.2–300 K temperature range // Journal of Physics: Conference Series - 2017, Vol. 917, No. 5, pp. 052005 [SJR: 0.21]
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