Сотрудник подразделения
Публикации
- 13Kalosha V.P., Shchukin V.A., Ledentsov N.J., Ledentsov N.N. Comprehensive Analysis of Electric Properties of Oxide-Confined Vertical-Cavity Surface-Emitting Lasers // IEEE Journal of Selected Topics in Quantum Electronics - 2019, Vol. 25, No. 6, pp. 1700809 [IF: 3.971, SJR: 1.131]
подробнее >> - 12Shchukin V.A., Ledentsov N.N., Egorov A.Y. Wavelength–stabilized near–field laser // Optics express - 2019, Vol. 27, No. 22, pp. 32019-32036 [IF: 3.307, SJR: 1.394]
подробнее >> - 11Babichev A.V., Karachinskii L.Y., Novikov I.I., Gladyshev A.G., Sirbu A., Mikhailov S., Iakovlev V., Blokhin S.A., Stepniak G., Chorchos L., Turkiewicz J.P., Voropaev K.O., Ionov A.S., Agustin M., Ledentsov N.N., Egorov A.Y. Vertical-Cavity Surface-Emitting 1.55-mu m Lasers Fabricated by Fusion // Technical Physics Letters - 2018, Vol. 44, No. 1, pp. 24-27 [IF: 0.771, SJR: 0.338]
подробнее >> - 10Ledentsov N.N., Shchukin V.A., Kalosha V.P., Ledentsov N.N., Kropp J.R., Agustin M., Chorchos L., Stepniak G., Turkiewicz J.P., Shi J.W. Anti-waveguiding vertical-cavity surface-emitting laser at 850 nm: From concept to advances in high-speed data transmission // Optics express - 2018, Vol. 26, No. 1, pp. 445-453 [IF: 3.307, SJR: 1.394]
подробнее >> - 9Shchukin V.A., Ledentsov N.N., Kalosha V.P., Ledentsov N.J., Agustin M., Kropp J.R., Maximov M.V., Zubov F.I., Shernyakov Y.M., Payusov A.S., Gordeev N.Y., Kulagina M.M., Zhukov A.E., Egorov A.Y. Virtual cavity in distributed Bragg reflectors // Optics express - 2018, Vol. 26, No. 19, pp. 25280-25292 [IF: 3.307, SJR: 1.394]
подробнее >> - 8Babichev A.V., Karachinsky L.Y., Novikov I.I., Gladyshev A.G., Blokhin S.A., Mikhailov S., Iakovlev V., Sirbu A., Stepniak G., Chorchos L., Turkiewicz J.P., Voropaev K.O., Ionov A.S., Agustin M., Ledentsov N.N., Egorov A.Y. 6-mW Single-Mode High-Speed 1550-nm Wafer-Fused VCSELs for DWDM Application // IEEE Journal of Quantum Electronics - 2017, Vol. 53, No. 6, pp. 2400808 [IF: 1.852, SJR: 0.661]
подробнее >> - 7Babichev A.V., Karachinsky L.Y., Novikov I.I., Gladyshev A.G., Mikhailov S., Iakovlev V., Sirbu A., Stepniak G., Chorchos L., Turkiewicz J.P., Agustin M., Ledentsov N.N., Voropaev K.O., Ionov A.S., Egorov A.Y. Continuous wave and modulation performance of 1550 nm band wafer-fused VCSELs with MBE-grown InP-based active region and GaAs-based DBRs // Proceedings of SPIE - 2017, Vol. 10122, pp. 1012208 [SJR: 0.192]
подробнее >> - 6Ledentsov N.N., Ledentsov N.J., Agustin M., Kropp J.R., Shchukin V.A. Application of nanophotonics to the next generation of surface-emitting lasers // Nanophotonics - 2017, Vol. 6, No. 5, pp. 813-829 [IF: 4.492, SJR: 2.717]
подробнее >> - 5Ledentsov N.N., Shchukin V.A., Shernyakov Y.M., Kulagina M.M., Payusov A.S., Gordeev N.Y., Maximov M.V., Cherkashin N.A. (In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range // Semiconductor Science and Technology - 2017, Vol. 32, No. 2, pp. 025016 [IF: 2.305, SJR: 0.712]
подробнее >> - 4Ledentsov N., Shchukin V.A., Ledentsov N.N., Kropp J.R., Burger S., Schmidt F. Direct Evidence of the Leaky Emission in Oxide-Confined Vertical Cavity Lasers // IEEE Journal of Quantum Electronics - 2016, Vol. 52, No. 3, pp. 7383219 [IF: 1.852, SJR: 0.661]
подробнее >> - 3Ledentsov N.N., Shchukin V.A., Ledentsov N.N., Kropp J.R. Design Considerations for Single-Mode Vertical-Cavity Surface-Emitting Lasers with Impurity-Induced Intermixing // IEEE Journal of Quantum Electronics - 2016, Vol. 52, No. 8, pp. 2400406 [IF: 1.852, SJR: 0.661]
подробнее >> - 2Ledentsov N.N., Shchukin V.A., Maximov M.V., Shernyakov Y.M., Payusov A.S., Gordeev N.Y., Rouvimov S.S. High temperature laser diode based on a single sheet of quantum dots // Semiconductor Science and Technology - 2015, Vol. 30, No. 10, pp. 105005 [IF: 2.305, SJR: 0.712]
подробнее >> - 1Shchukin V.A., Ledentsov N.N., Karachinsky L.Y., Blokhin S.A., Novikov I.I., Egorov A.Y., Maximov M.V., Gordeev N.Y., Kulagina M.M., Ustinov V.M. Evidence of negative electrorefraction in type-II GaAs/GaAlAs short-period superlattice // Semiconductor Science and Technology - 2015, Vol. 30, No. 11, pp. 115013 [IF: 2.305, SJR: 0.712]
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