Сотрудник подразделения
Публикации
- 10Breev I.D., Anisimov A.N., Wolfson A.A., Kazarova O.P., Mokhov E.N. Raman scattering in AlN crystals grown by sublimation on SiC and AlN seeds // Semiconductors - 2019, Vol. 53, No. 11, pp. 1558-1561 [IF: 0.602, SJR: 0.287]
подробнее >> - 9Soltamov V.A., Kasper C., Poshakinskiy A.V., Anisimov A.N., Mokhov E.N., Sperlich A., Tarasenko S.A., Baranov P.G., Astakhov G.V., Dyakonov V.V. Excitation and coherent control of spin qudit modes in silicon carbide at room temperature // Nature Communications - 2019, Vol. 10, No. 1, pp. 1678 [IF: 12.124, SJR: 5.559]
подробнее >> - 8Soltamov V.A., Rabchinskii M.K., Yavkin B.V., Kazarova O.P., Nagalyuk S.S., Davydov V.Y., Smirnov A.N., Lebedev V.F., Mokhov E.N., Orlinskii S.B., Baranov P.G. Properties of AlN single crystals doped with Beryllium via high temperature diffusion // Applied Physics Letters - 2018, Vol. 113, No. 8, pp. 082104 [IF: 3.411, SJR: 1.182]
подробнее >> - 7Argunova T.S., Gutkin M.Y., Je J., Kalmykov A.E., Kazarova O., Mokhov E.N., Mikaelyan K.N., Myasoedov A.V., Sorokin L.M., Shcherbachev K.D. Distribution of dislocations near the interface in AIN crystals grown on evaporated SiC substrates // Crystals - 2017, Vol. 7, No. 6, pp. 163 [IF: 1.566, SJR: 0.538]
подробнее >> - 6Argunova T.S., Gutkin M.Y., Shcherbachev K.D., Je J.H., Lim J.H., Kazarova O.P., Mokhov E.N. Microstructure and strength of AlN–SiC interface studied by synchrotron X-rays // Journal of Materials Science - 2017, Vol. 52, No. 8, pp. 4244-4252 [IF: 2.599, SJR: 0.813]
подробнее >> - 5Mokhov E.N., Argunova T.S., Je J.H., Kazarova O., Shcherbachev K. Freestanding single crystal AlN layers grown using the SiC substrate evaporation method // CrystEngComm - 2017, Vol. 19, No. 23, pp. 3192-3197 [IF: 3.474, SJR: 0.813]
подробнее >> - 4Savchenko D., Kalabukhova E., Shanina B., Cichon S., Honolka J., Kiselov V., Mokhov E. Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance // Journal of Applied Physics - 2016, Vol. 119, No. 4, pp. 045701 [IF: 2.068, SJR: 0.699]
подробнее >> - 3Savchenko D., Shanina B., Kalabukhova E., Poeppl A., Lancok J., Mokhov E. The spin relaxation of nitrogen donors in 6H SiC crystals as studied by the electron spin echo method // Journal of Applied Physics - 2016, Vol. 119, No. 13, pp. 135706 [IF: 2.068, SJR: 0.699]
подробнее >> - 2Simin D., Soltamov V.A., Poshakinskiy A.V., Anisimov A.N., Babunts R.A., Tolmachev D.O., Mokhov E.N., Trupke M., Tarasenko S.A., Sperlich A., Baranov P.G., Dyakonov V., Astakhov G.V. All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide // Physical Review X - 2016, Vol. 6, No. 3, pp. 031014 [IF: 12.789, SJR: 7.94]
подробнее >> - 1Argunova T.S., Gutkin M.Y., Mokhov E.N., Kazarova O.P., Lim J.H., Shcheglov M.P. Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates // Physics of the Solid State - 2015, Vol. 57, No. 12, pp. 2473–2478 [IF: 0.86, SJR: 0.346]
подробнее >>