Сотрудник подразделения
Публикации
- 40Gridchin V.O., Kotlyar K.P., Reznik R.R., Dvoretskaya E.A., Parfen’Eva A.V., Mukhin I.S., Cirlin G.E. Selective-Area Growth of GaN Nanowires on patterned SiOx/Si Substrates by Molecular Beam Epitaxy // Technical Physics Letters - 2020, Vol. 46, No. 11, pp. 1080-1083 [IF: 0.771, SJR: 0.338]
подробнее >> - 39Leandro L., Reznik R.R., Clement J., Repan J., Reynolds M., Ubyivovk E.V., Shtrom I.V., Cirlin G.E., Akopian N. Wurtzite AlGaAs Nanowires // Scientific Reports - 2020, Vol. 10, No. 1, pp. 735 [IF: 4.259, SJR: 1.24]
подробнее >> - 38Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Kirilenko D.A., Ilkiv I.V., Reznik R.R., Cirlin G.E., Berkovits V.L. Control of Conductivity of In(x)G(a1-x)As Nanowires by Applied Tension and Surface States // Nano Letters - 2019, Vol. 19, No. 7, pp. 4463-4469 [IF: 12.712, SJR: 4.853]
подробнее >> - 37Berdnikov Y., Sibirev N. V. ., Reznik R.R., Redkov A.V. The model for in-plane and out-of-plane growth regimes of semiconductor nanowires // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012049 [SJR: 0.21]
подробнее >> - 36Grigorieva N.R., Shtrom I.V., Grigoriev R.V., Soshnikov I.P., Reznik R.R., Samsonenko Y.B., Sibirev N. V. ., Cirlin G.E. The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires // Technical Physics Letters - 2019, Vol. 45, No. 8, pp. 835-838 [IF: 0.771, SJR: 0.338]
подробнее >> - 35Khrebtov A.I., Reznik R.R., Ubyivovk E., Litvin A.P., Skurlov I.D., Parfenov P.S., Kulagina A.S., Danilov V.V., Cirlin G.E. Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality // Semiconductors - 2019, Vol. 53, No. 9, pp. 1258-1261 [IF: 0.602, SJR: 0.287]
подробнее >> - 34Koryakin A.A. ., Kukushkin S.A., Kotlyar K.P., Ubyivovk E., Reznik R.R., Cirlin G.E. A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires // CrystEngComm - 2019, Vol. 21, No. 32, pp. 4707-4717 [IF: 3.474, SJR: 0.813]
подробнее >> - 33Kotlyar K.P., Vershinin A.V., Reznik R.R., Pavlov S.I., Kudryashov D.A., Zelentsov K.S., Mozharov A.M., Karaborchev A.A., Mukhin I.S., Soshnikov I.P., Cirlin G.E. Photovoltaic properties of InP NWs/p-Si heterostructure // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012060 [SJR: 0.21]
подробнее >> - 32Reznik R.R., Kotlyar K.P., Khrebtov A.I., Kryzhanovskaya N.V., Cirlin G.E. InGaN nanostructures of a branched morphology on silicon substrate: MBE synthesis and properties // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012052 [SJR: 0.21]
подробнее >> - 31Reznik R.R., Kotlyar K.P., Kryzhanovskaya N.V., Morozov S.V., Cirlin G.E. Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate // Technical Physics Letters - 2019, Vol. 45, No. 11, pp. 1111-1113 [IF: 0.771, SJR: 0.338]
подробнее >> - 30Reznik R.R., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Talalaev V.G., Cirlin G.E. The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers // AIP Conference Proceedings - 2019, Vol. 2064, pp. 040004 [SJR: 0.177]
подробнее >> - 29Sharov V.A., Alekseev P.A., Borodin B.R., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. InP/Si Heterostructure for High-Current Hybrid Triboelectric/Photovoltaic Generation // ACS Applied Energy Materials - 2019, Vol. 2, No. 6, pp. 4395-4401 [SJR: 1.833]
подробнее >> - 28Sharov V.A., Alekseev P.A., Dunaevskiy M.S., Reznik R.R., Cirlin G.E. Triboelectric current generation in InP // Journal of Physics: Conference Series - 2019, Vol. 1400, No. 6, pp. 066055 [SJR: 0.21]
подробнее >> - 27Alekseev P.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Smirnov A.N., Kirilenko D.A., Davydov V.Y., Berkovits V.L. Unified mechanism of the surface Fermi level pinning in III-As nanowires // Nanotechnology - 2018, Vol. 29, No. 31, pp. 314003 [IF: 3.44, SJR: 0.926]
подробнее >> - 26Alekseev P.A., Sharov V.A., Dunaevskiy M.S., Cirlin G.E., Reznik R.R., Berkovits V.L. Electromechanical Switch Based on InxGa1-xAs Nanowires // Semiconductors - 2018, Vol. 52, No. 14, pp. 1833-1835 [IF: 0.602]
подробнее >> - 25Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Lysak V.V., Cirlin G.E., Reznik R.R., Khrebtov A.I., Soshnikov I.P., Lahderanta E. Piezoelectric current generation in wurtzite GaAs nanowires // Physica Status Solidi (RRL)- Rapid Research Letters - 2018, Vol. 12, No. 1, pp. 1700358 [IF: 2.578, SJR: 0.786]
подробнее >> - 24Alekseev P.A., Sharov V.A., Geydt P., Dunaevskiy M.S., Soshnikov I.P., Reznik R.R., Lisak V., Lahderanta E., Cirlin G.E. GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells // Semiconductors - 2018, Vol. 52, No. 5, pp. 609-611 [IF: 0.602, SJR: 0.287]
подробнее >> - 23Bourauleuv A.D., Ilkiv I., Reznik R.R., Kotlyar K.P., Soshnikov I., Cirlin G.E., Brunkov P.N., Kirilenko D.A., Bondarenko L.V., Nepomniaschiy A., Gruznev D.V., Zotov A.V., Saranin A.A., Dhaka V., Lipsanen H. New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles // Nanotechnology - 2018, Vol. 29, No. 4, pp. 045602 [IF: 3.44, SJR: 0.926]
подробнее >> - 22Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Samsonenko Y.B., Kukushkin S.A., Kasama T., Akopian N., Leonardo L. Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources // Semiconductors - 2018, Vol. 52, No. 4, pp. 462-464 [IF: 0.602, SJR: 0.287]
подробнее >> - 21Kotlyar K., Kudryashov D.A., Soshnikov I.P., Uvarov A.V., Reznik R.R. Temperature annealing effect on ITO film // Journal of Physics: Conference Series - 2018, Vol. 1124, No. 4, pp. 041035 [SJR: 0.21]
подробнее >> - 20Reznik R.R., Cirlin G.E., Shtrom I.V., Khrebtov A.I., Soshnikov I.P., Kryzhanovskaya N.V., Moiseev E.I., Zhukov A.E. Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy // Technical Physics Letters - 2018, Vol. 44, No. 2, pp. 112-114 [IF: 0.771, SJR: 0.338]
подробнее >> - 19Reznik R.R., Kotlyar K.P., Il’Kiv I.V., Khrebtov A.I., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. MBE Growth and Optical Properties of GaN, InN, and A(3)B(5) Nanowires on SiC/Si(111) Hybrid Substrate // Advances in Condensed Matter Physics - 2018, pp. 1040689 [IF: 1.044, SJR: 0.314]
подробнее >> - 18Reznik R.R., Kotlyar K.P., Kukushkin S.A., Osipov A.V., Soshnikov I.P., Nikitina E.V., Cirlin G.E. MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 382
подробнее >> - 17Reznik R.R., Kotlyar K.P., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E. MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates // Semiconductors - 2018, Vol. 52, No. 5, pp. 651-653 [IF: 0.602, SJR: 0.287]
подробнее >> - 16Reznik R.R., Kryzhanovskaya N.V., Zhukov A.E., Khrebtov A.I., Samsonenko Y.B., Morozov S.V., Cirlin G.E. Structural properties of multilayer heterostructure for quantum-cascade lasers grown by MBE growth // Journal of Physics: Conference Series - 2018, Vol. 1124, No. 2, pp. 022005 [SJR: 0.21]
подробнее >> - 15Reznik R.R., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Zeze D., Cirlin G.E. MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) substrate // Journal of Physics: Conference Series - 2018, Vol. 1038, No. 1, pp. 012063 [SJR: 0.21]
подробнее >> - 14Shtrom I.V., Filosofov N.G., Agekian V.F., Smirnov M.B., Serov A.Y., Reznik R.R., Kudryavtsev K.E., Cirlin G.E. Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate // Semiconductors - 2018, Vol. 52, No. 5, pp. 602-604 [IF: 0.602, SJR: 0.287]
подробнее >> - 13Shtrom I.V., Sibirev N.V., Ubiivovk E.V., Samsonenko Y.B., Khrebtov A.I., Reznik R.R., Bouravleuv A.D., Cirlin G.E. GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases // Semiconductors - 2018, Vol. 52, No. 1, pp. 1-5 [IF: 0.602, SJR: 0.287]
подробнее >> - 12Штром И.В., Сибирев Н.В., Убыйвовк Е.В., Самсоненко Ю.Б., Хребтов А.И., Резник Р.Р., Буравлев А.Д., Цырлин Г.Э. XXI международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 13-16 марта 2017 г. Нитевидные нанокристаллы GaP/Si(111), синтезированные методом молекулярно-пучковой эпитаксии с переключением гексагональной и кубической фазy // Физика и техника полупроводников - 2018. - Т. 52. - № 1. - С. 5-9 [IF: 0.745]
подробнее >> - 11Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Soshnikov I.P., Kukushkin S.A., Leandro L., Kasama T., Akopian N. AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates // Journal of Physics D: Applied Physics - 2017, Vol. 50, No. 48, pp. 484003 [IF: 2.588, SJR: 0.857]
подробнее >> - 10Reznik R.R., Kotlyar K.P., Shtrom I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Cirlin G.E. MBE Growth of Ultrathin III–V Nanowires on a Highly Mismatched SiC/Si(111) Substrate // Semiconductors - 2017, Vol. 51, No. 11, pp. 1472–1476 [IF: 0.602, SJR: 0.287]
подробнее >> - 9Reznik R.R., Kotlyar K.P., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate // Journal of Physics: Conference Series - 2017, Vol. 917, No. 3, pp. 032014 [SJR: 0.21]
подробнее >> - 8Reznik R.R., Kryzhanovskaya N.V., Zubov F.I., Zhukov A.E., Khabibullin R.A., Morozov S.V., Cirlin G.E. MBE growth, structural and optical properties of multilayer heterostructures for quantum-cascade lasers // Journal of Physics: Conference Series - 2017, Vol. 917, No. 5, pp. 052012 [SJR: 0.21]
подробнее >> - 7Reznik R.R., Shtrom I.V., Samsonenko Y.B., Khrebtov A.I., Soshnikov I.P., Cirlin G.E. The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate // Journal of Physics: Conference Series - 2017, Vol. 929, No. 1, pp. 012047 [SJR: 0.21]
подробнее >> - 6Bouravleuv A.D., Cirlin G.E., Reznik R.R., Khrebtov A.I., Samsonenko Y.B., Werner P.E., Soshnikov I.P., Savin A.M., Lipsanen H.K. Growth and properties of self-catalyzed (In,Mn)As nanowires // Physica Status Solidi (RRL)- Rapid Research Letters - 2016, Vol. 10, No. 7, pp. 554-557 [IF: 2.578, SJR: 0.786]
подробнее >> - 5Reznik R.R., Kotlyar K., Ilkiv I., Soshnikov I., Kukushkin S.A., Osipov A.V., Nikitina E., Cirlin G. MBE Growth and Optical Properties of GaN Nanowires on SiC/Si(111) Hybrid Substrate // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040003 [SJR: 0.177]
подробнее >> - 4Reznik R.R., Kotlyar K.P., Ilkiv I.V., Kukushkin S.A., Osipov A.V., Soshnikov I.P., Nikitina E.V., Cirlin G.E. MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate // International Conference Laser Optics, LO 2016 - 2016, pp. R92
подробнее >> - 3Reznik R.R., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012027 [SJR: 0.21]
подробнее >> - 2Zhukov A.E., Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kaliteevski M.A., Ivanov K.A., Kryzhanovskaya N.V., Maximov M.V., Alferov Z.I. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range // Semiconductors - 2016, Vol. 50, No. 5, pp. 662-666 [IF: 0.602, SJR: 0.287]
подробнее >> - 1Reznik R.R., Kotlyar K., Khrebtov A.I., Samsonenko Y.B., Soshnikov I.P., Dyakonov V., Zadiranov U., Tankelevskaya E., Kudryashov D.A., Shevchuk D.S., Cirlin G.E. Development of methods for orderly growth of nanowires // Journal of Physics: Conference Series - 2015, Vol. 661, No. 1, pp. 012053 [SJR: 0.21]
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