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Публикации

  1. 6Blokhin S.A., Bobrov M.A., Blokhin A.A., Kuz’Menkov A.G., Maleev N.A., Ustinov V.M., Kolodeznyi E.S., Rochas S.S., Babichev A.V., Novikov I.I., Gladyshev A.G., Karachinsky L.Y., Denisov D.V., Voropaev K.O., Ionov A.S., Egorov A.Y. Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-mu m Wafer-Fused Vertical-Cavity Surface-Emitting Lasers // Semiconductors - 2019, Vol. 53, No. 8, pp. 1104-1109 [IF: 0.602, SJR: 0.287]
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  2. 5Dudelev V.V., Mamutin V.V., Chistyakov D.V., Kognovitskaya E.A., Kuchinskii V.I., Maleev N.A., Vasil’Ev A.P., Kuz’Menkov A.G., Ustinov V.M., Sokolovskii G.S. The Effect of Active Region Heating on Dynamic and Power Characteristics of Quantum Cascade Lasers Emitting at a Wavelength of 4.8 µm at Room Temperature // Optics and spectroscopy - 2019, Vol. 127, No. 3, pp. 479-482 [IF: 0.716, SJR: 0.283]
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  3. 4Aladov A.V., Bugrov V.E., Chernyakov A.E., Ustinov V.M., Zakgeim A.L. Dynamic thermal analysis of "vertical" and "faceup" high-power AlGaInN LEDs at Pulse Operation // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 162
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  4. 3Babichev A.V., Sokolovskii G.S., Ustinov V.M., Gladyshev A.G., Karachinsky L.Y., Novikov I.I., Egorov A.Y. Quantum-cascade lasers of 8-9 mu m spectral range // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 173
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  5. 2Dudelev V.V., Maleev N.A., Kuz’Menkov A.G., Blokhin S.A., Myl’Nikov V.Y., Kuchinskii V.I., Ustinov V.M., Rafailov E.U., Sokolovskii G.S. Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots // Technical Physics Letters - 2017, Vol. 43, No. 12, pp. 1099-1101 [IF: 0.771, SJR: 0.338]
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  6. 1Tsatsul’Nikov A.F., Lundin V.W., Zavarin E.E., Yagovkina M.A., Sakharov A.V., Usov S.O., Zemlyakov V.E., Egorkin V.I., Bulashevich K.A., Karpov S.Y., Ustinov V.M. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis // Semiconductors - 2016, Vol. 50, No. 10, pp. 1383–1389 [IF: 0.602, SJR: 0.287]
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