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Публикации
- 10Lundin W.V., Tsatsul’Nikov A.F., Rodin S.N., Sakharov A.V., Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Evtikhiev V.P. Selective Epitaxy of Submicron GaN Structures // Semiconductors - 2019, Vol. 53, No. 16, pp. 2118-2120 [IF: 0.602, SJR: 0.287]
подробнее >> - 9Pozina G., Ivanov K.A., Mitrofanov I., Kaliteevski M.A., Morozov K.M., Levitskii I.V., Voznyuk G.V., Evtikhiev V.P., Rodin S.N. Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal-Organic Vapor Phase Epitaxy // Physica status solidi (b) - 2019, Vol. 256, No. 6, pp. 1800631 [IF: 1.674, SJR: 0.51]
подробнее >> - 8Sakharov A.V., Usov S.O., Rodin S.N., Lundin W.V., Tsatsulnikov A.F., Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Kaliteevskii M.A., Evtikhiev V.P. Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam // Semiconductors - 2019, Vol. 53, No. 16, pp. 2121-2124 [IF: 0.602, SJR: 0.287]
подробнее >> - 7Levitskii I.V., Mitrofanov M.I., Voznyuk G.V., Nikolaev D.N., Mizerov M.N., Evtikhiev V.P. Effect of annealing FIB-induced defects in GaAs/AlGaAs heterostructure // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 163
подробнее >> - 6Levitskii I.V., Mitrofanov M.I., Voznyuk G.V., Nikolaev D.N., Mizerov M.N., Evtikhiev V.P. Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure // Semiconductors - 2018, Vol. 52, No. 14, pp. 1898-1900 [IF: 0.602, SJR: 0.287]
подробнее >> - 5Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Tatarinov E.E., Rodin S.N., Kaliteevski M.A., Evtikhiev V.P. Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching // Semiconductors - 2018, Vol. 52, No. 7, pp. 954–956 [IF: 0.602, SJR: 0.287]
подробнее >> - 4Pozina G., Gubaydullin A.R., Mitrofanov M.I., Kaliteevski M.A., Levitskii I.V., Voznyuk G.V., Tatarinov E.E., Evtikhiev V.P., Rodin S.N., Kaliteevskiy V.N., Chechurin L.S. Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy // Scientific Reports - 2018, Vol. 8, pp. 7218 [IF: 4.259, SJR: 1.24]
подробнее >> - 3Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Mizerov M.N., Nikolaev D.N., Evtikhiev V.P. The study of photoluminescence properties of AlGaAs/GaAs heterostructure after Ga+ focused ion beam etching // Journal of Physics: Conference Series - 2018, Vol. 1124, No. 5, pp. 051016 [SJR: 0.21]
подробнее >> - 2Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Nikolaev D.N., Evtikhiev V.P. Effect of Ga+ focused ion beam etching on photoluminescence of AlGaAs/GaAs heterostructure // Journal of Physics: Conference Series - 2018, Vol. 1038, No. 1, pp. 012080 [SJR: 0.21]
подробнее >> - 1Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Nikolaev D.N., Evtikhiev V.P. Photoluminescence study of AlGaAs/GaAs heterostructure subsequent to Ga+ focused ion beam etching // Proceedings - International Conference Laser Optics 2018, ICLO 2018 - 2018, pp. 167
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