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Публикации
- 5Grashchenko A.S., Kukushkin S.A., Osipov A.V. Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic substitution // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012003 [SJR: 0.21]
подробнее >> - 4Kukushkin S.A., Sharofidinov S.S., Osipov A.V., Redkov A.V., Kidalov V.V., Grashchenko A.S., Soshnikov I.P., Dyadenchuk A.F. Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of atoms on porous Si substrates (ECS Journal of Solid State Science and Technology (2018) 7 (P480) DOI: 10.1149/2.0191809jss) // ECS Journal of Solid State Science and Technology - 2019, Vol. 8, No. 4, pp. X1 [IF: 1.787, SJR: 0.488]
подробнее >> - 3Sharofidinov S.S., Kukushkin S.A., Red’Kov A.V., Grashchenko A.S., Osipov A.V. Growing III–V Semiconductor Heterostructures on SiC/Si Substrates // Technical Physics Letters - 2019, Vol. 45, No. 7, pp. 711-713 [IF: 0.771, SJR: 0.338]
подробнее >> - 2Kukushkin S.A., Osipov A.V., Redkov A.V., Grashchenko A.S., Feoktistov N.A., Fedotov S.D., Statsenko V., Sokolov E.M., Timoshenkov S.P. A new method for synthesis of epitaxial films of silicon carbide on sapphire substrates (alpha-Al2O3) // Reviews on Advanced Materials Science - 2018, Vol. 57, No. 1, pp. 82-96 [IF: 2.5, SJR: 0.361]
подробнее >> - 1Kukushkin S.A., Sharofidinov S.S., Osipov A.V., Redkov A.V., Kidalov V.V., Grashchenko A.S., Soshnikov I.P., Dydenchuk A.F. The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates // ECS Journal of Solid State Science and Technology - 2018, Vol. 7, No. 9, pp. P480-P486 [IF: 1.787, SJR: 0.488]
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