Физические основы и технологии создания полупроводниковой высокоскоростной оптоэлектронной компонентной базы систем радиофотоники
- Руководитель: Егоров Антон Юрьевич
Публикации
- 12. Egorov A.Y., Karachinsky L.Y., Novikov I.I., Babichev A.V., Nevedomsky V.M., Bugrov V.E. Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range // Semiconductors - 2015, Vol. 49, No. 11, pp. 1522-1526 [IF: 0.602, SJR: 0.287]
подробнее >> - 11. Pozina G.R., Kaliteevski M.A., Nikitina E.V., Denisov D.V., Polyakov N.K., Pirogov E.V., Goray L.I., Gubaydullin A.R., Ivanov K.A., Kaliteevskaya N.A., Egorov A.Y., Clark S.J. Super-radiant mode in InAs-monolayer-based Bragg structures // Scientific Reports - 2015, Vol. 5, pp. 14911 [IF: 4.259, SJR: 1.24]
подробнее >> - 10. Kudryashov D., Babichev A.V., Nikitina E., Gudovskikh A., Kladko P. Photoluminescence observation from zinc oxide formed by magnetron sputtering at room temperature // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012013 [SJR: 0.21]
подробнее >> - 9. Ledentsov N.N., Shchukin V.A., Maximov M.V., Shernyakov Y.M., Payusov A.S., Gordeev N.Y., Rouvimov S.S. High temperature laser diode based on a single sheet of quantum dots // Semiconductor Science and Technology - 2015, Vol. 30, No. 10, pp. 105005 [IF: 2.305, SJR: 0.712]
подробнее >> - 8. Shchukin V.A., Ledentsov N.N., Karachinsky L.Y., Blokhin S.A., Novikov I.I., Egorov A.Y., Maximov M.V., Gordeev N.Y., Kulagina M.M., Ustinov V.M. Evidence of negative electrorefraction in type-II GaAs/GaAlAs short-period superlattice // Semiconductor Science and Technology - 2015, Vol. 30, No. 11, pp. 115013 [IF: 2.305, SJR: 0.712]
подробнее >> - 7. Иванов К.А., Калитеевская Н.А., Губайдуллин А.Р., Калитеевский М.А. Анализ характеристик бозонного каскадного лазера // Письма в Журнал технической физики - 2015. - Т. 41. - № 22. - С. 40-47 [IF: 0.599]
подробнее >> - 6. Egorov A.Y., Babichev A.V., Karachinsky L.Y., Novikov I.I., Nikitina E.V., Tchernycheva M., Sofronov A.N., Firsov D.A., Vorobjev L.E., Pikhtin N.A., Tarasov I.S. Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-µm under current pumping // Semiconductors - 2015, Vol. 49, No. 11, pp. 1527-1530 [IF: 0.602, SJR: 0.287]
подробнее >> - 5. Buyalo M.S., Gadzhiyev I.M., Usikova A.A., Zadiranov Y.M., Il’Inskaya N.D., Gubenko A.E., Egorov A.Y., Portnoi E.L. Power increase in Q-switched two-sectional quantum well lasers due to Stark effect // Technical Physics Letters - 2015, Vol. 41, No. 10, pp. 984-986 [IF: 0.771, SJR: 0.338]
подробнее >> - 4. Messanvi A., Zhang H., Neplokh V., Julien F.H., Bayle F., Foldyna M.F., Bougerol C., Gautier E., Babichev A., Durand C., Eymery J., Tchernycheva M. Investigation of photovoltaic properties of single core-shell GaN/InGaN wires // ACS Applied Materials and Interfaces - 2015, Vol. 7, No. 39, pp. 21898-21906 [IF: 7.504, SJR: 2.535]
подробнее >> - 3. Zaitsev D.A., Il'Ynskaya N.D., Koudinov A.V., Poletaev N.K., Nikitina E.V., Egorov A.Y., Kavokin A.V., Seisyan R.P. Diffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs // Scientific Reports - 2015, Vol. 5, pp. 11474 [IF: 4.259, SJR: 1.24]
подробнее >> - 2. Tchernycheva M., Neplokh V., Zhang H., Lavenus P., Rigutti L., Bayle F., Julien F.H., Babichev A., Jacopin G., Largeau L., Ciechonski R.R., Vescovi G., Kryliouk O.M. Core-Shell InGaN/GaN Nanowire Light Emitting Diodes analyzed by Electron Beam Induced Current Microscopy and Cathodoluminescence Mapping // Nanoscale - 2015, Vol. 7, No. 27, pp. 11692-11701 Core-Shell InGaN/GaN Nanowire Light Emitting Diodes analyzed by Electron Beam Induced Current Microscopy and Cathodoluminescence Mapping
[IF: 7.367, SJR: 2.038]
подробнее >> - 1. Рожков М.А., Колодезный Е.С., Смирнов А.М., Бугров В.Е., Романов А.Е. Сравнение характеристик диодов Шоттки на основе бета-Ga2O3 и других широкозонных полупроводниковых материалов [Comparison of characteristics of schottky diodes based on бета-Ga2O3 and other wide bandgap semiconductors] // Физика и механика материалов = Materials Physics and Mechanics - 2015. - Т. 24. - № 2. - С. 194-200 [SJR: 0.285]
подробнее >>