Публикации

  1. 72. Koryakin A.A. ., Leshchenko E.D., Dubrovskii V.G. Modeling the formation of InP/GaxIn(1-x)P axial nanowire heterostructures // Journal of Physics: Conference Series - 2019, Vol. 1410, No. 1, pp. 012058 [SJR: 0.221]
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  2. 71. Лещенко Е.Д., Дубровский В.Г. Неоднородное распределение легирующей примеси в AIII-BV нитевидных нанокристаллах // Физика и техника полупроводников - 2017. - Т. 51. - № 11. - С. 1480-1483 [IF: 0.745]
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  3. 70. Berdnikov Y., Sibirev N. V. ., Schmidtbauer J., Borg M., Johansson J., Dubrovskii V.G. Broadening of Length Distributions of Au-catalyzed InAs Nanowires // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040001 [SJR: 0.182]
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  4. 69. Berdnikov Y.S., Sibirev N.V., Dubrovskii V.G. Contribution of droplet volume fluctuation to dispersion of nanowire length // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012040 [SJR: 0.221]
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  5. 68. Bolshakov A.D., Sapunov G.A., Mozharov A.M., Cirlin G.E., Shtrom I.V., Mukhin I.S. Synthesis of GaN nanowires on Si (111) substrates by molecular beam epitaxy // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012044 [SJR: 0.221]
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  6. 67. Bouravleuv A.D., Cirlin G.E., Reznik R.R., Khrebtov A.I., Samsonenko Y.B., Werner P.E., Soshnikov I.P., Savin A.M., Lipsanen H.K. Growth and properties of self-catalyzed (In,Mn)As nanowires // Physica Status Solidi (RRL)- Rapid Research Letters - 2016, Vol. 10, No. 7, pp. 554-557 [IF: 2.578, SJR: 1.031]
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  7. 66. Cirlin G.E., Buyskhih A.S., Bouravlev A.D., Samsonenko Y.B., Kaliteevski M.A., Gallant A.J., Zeze D.A. . Investigation of non-equilibrium electron-hole plasma in nanowires by THz spectroscopy // Оптика и спектроскопия - 2016, Vol. 120, No. 5, pp. 796-801 [IF: 0.484]
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  8. 65. Cirlin G.E., Buyskikh A.S., Bouravleuv A.D., Samsonenko Y.B., Kaliteevski M.A., Gallant A.J., Zeze D.A. Investigation of non-equilibrium electron-hole plasma in nanowires by THz spectroscopy // Optics and spectroscopy - 2016, Vol. 120, No. 5, pp. 751-755 [IF: 0.716, SJR: 0.299]
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  9. 64. Dong Z., Andre Y., Dubrovskii V.G., Bougerol C., Monier G., Ramdani R.M., Trassoudaine A., Castelluci D., Leroux C.H., Gil E. Self-catalyzed growth of GaAs nanowires on silicon by HVPE // International Conference Laser Optics, LO 2016 - 2016, pp. R91
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  10. 63. Dubrovskii V.G. A model of axial heterostructure formation in III–V semiconductor nanowires // Technical Physics Letters - 2016, Vol. 42, No. 3, pp. 332-335 [IF: 0.771, SJR: 0.396]
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  11. 62. Dubrovskii V.G. Group v sensitive vapor-liquid-solid growth of Au-catalyzed and self-catalyzed III-V nanowires // Journal of Crystal Growth - 2016, Vol. 440, pp. 62-68 [IF: 1.462, SJR: 0.515]
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  12. 61. Dubrovskii V.G. Kinetic narrowing of size distribution // Physical Review B - 2016, Vol. 93, No. 17, pp. 174203 [IF: 3.836, SJR: 1.502]
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  13. 60. Dubrovskii V.G. The length distribution function of semiconductor filamentary nanocrystals // Technical Physics Letters - 2016, Vol. 42, No. 7, pp. 682-685 [IF: 0.771, SJR: 0.396]
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  14. 59. Dubrovskii V.G., Berdnikov Y., Schmidtbauer J., Borg M., Storm K., Deppert K., Johansson J. Length Distributions of Nanowires Growing by Surface Diffusion // Crystal Growth & Design - 2016, Vol. 16, No. 4, pp. 2167-2172 [IF: 4.055, SJR: 1.046]
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  15. 58. Dubrovskii V.G., Berdnikov Y., Sibirev N.V. Regimes of radial growth for Ga-catalyzed GaAs nanowires // Applied Physics A: Materials Science and Processing - 2016, Vol. 122, No. 7, pp. 671 [IF: 1.455, SJR: 0.421]
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  16. 57. Dubrovskii V.G., Sibirev N. V. . Factors Influencing the Interfacial Abruptness in Axial III-V Nanowire Heterostructures // Crystal Growth & Design - 2016, Vol. 16, No. 4, pp. 2019-2023 [IF: 4.055, SJR: 1.046]
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  17. 56. Dubrovskii V.G., Sibirev N.V., Berdnikov Y.S., Gomes U.P., Ercolani D., Zannier V., Sorba L. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires // Nanotechnology - 2016, Vol. 27, No. 37, pp. 375602 [IF: 3.44, SJR: 1.056]
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  18. 55. Gao Q., Dubrovskii V.G., Caroff P., Wong-Leung J., Li L., Guo Y., Fu L., Tan H., Jagadish C.H. Simultaneous selective-area and vapor-liquid-solid growth of InP nanowire arrays // Nano Letters - 2016, Vol. 16, No. 7, pp. 4361-4367 [IF: 12.712, SJR: 6.211]
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  19. 54. Gonzalez-Diaz B., Guerrero-Lemus R., Del Canizo C., Garcia-Tabares E., Rey-Stolle I., Granek F., Korte L., Tucci M., Rath J., Singh U.P., Todorov T., Gunawan O., Plaza J.L., Rubio S., Dieguez E., Cirlin G.E., Hoffmann B., Christiansen S., Ramanujam J., Verma A. Inorganic Photovoltaics - Planar and Nanostructured Devices // Progress in Materials Science - 2016, No. 82, pp. 294-404 [IF: 31.14, SJR: 7.649]
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  20. 53. Grecenkov J., Dubrovskii V.G. Chemical potentials and growth rates of gold-catalyzed ternary InGaAs nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012010 [SJR: 0.221]
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  21. 52. Grecenkov J., Dubrovskii V.G., Ghasemi M., Johansson J. Quaternary Chemical Potentials for Gold-Catalyzed Growth of Ternary InGaAs Nanowires // Crystal Growth and Design - 2016, Vol. 16, No. 8, pp. 4529-4530 [IF: 4.055, SJR: 1.046]
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  22. 51. Koriakin A.A. ., Sibirev N. V. ., Huang H., Ren X., Dubrovskii V.G. As Flux Controlled Formation of (Al,Ga)As Axial Nanowire Heterostructures // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040002 [SJR: 0.182]
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  23. 50. Koryakin A.A. ., Repetun L., Sibirev N.V., Dubrovskii V.G. Self-induced GaN nanowire growth: Surface density determination // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012032 [SJR: 0.221]
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  24. 49. Kukushkin S.A., Nikolaev V.I., Osipov A.V., Osipova E.V., Pechnikov A.I., Feoktistov N.A. Epitaxial gallium oxide on a SiC/Si substrate // Physics of the solid state - 2016, Vol. 58, No. 9, pp. 1876-1881 [IF: 0.86, SJR: 0.364]
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  25. 48. Leshchenko E.D., Turchina M.A., Dubrovskii V.G. Self-equilibration of the radius distribution in self-catalyzed GaAs nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012033 [SJR: 0.221]
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  26. 47. Leshchenko E.D., Turchina M.A., Dubrovskii V.G. The initial stage of autocatalytic growth of GaAs filamentary nanocrystals // Technical Physics Letters - 2016, Vol. 42, No. 8, pp. 818-821 [IF: 0.771, SJR: 0.396]
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  27. 46. Lysak V., Soshnikov I.P., Lahderanta E.E., Cirlin G.E. Piezoelectric effect in GaAs nanowires: experiment and theory // Physica Status Solidi (RRL)- Rapid Research Letters - 2016, Vol. 10, No. 2, pp. 172-175 [IF: 2.578, SJR: 1.031]
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  28. 45. Lysak V.V., Soshnikov I.P., Lahderanta E.E., Cirlin G.E. Piezoelectric effect in wurtzite GaAs nanowires: Growth, characterization, and electromechanical 3D modeling // Physica Status Solidi (A) Applications and Materials Science - 2016, Vol. 213, No. 11, pp. 3014-3019 [IF: 1.775, SJR: 0.545]
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  29. 44. Mozharov A.M., Bolshakov A.D., Cirlin G.E., Kudryashov D.A., Gudovskikh A., Mukhin I.S., Alferov Z.I. Simulation of photovoltaic efficiency of a tandem solar cell on Si with GaN nanowires as an emitter layer // Journal of Physics: Conference Series - 2016, Vol. 690, No. 1, pp. 012041 [SJR: 0.221]
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  30. 43. Mozharov A.M., Komissarenko F.E., Vasiliev A.A., Bolshakov A.D., Moiseev E.I., Mukhin M.S., Cirlin G.E., Mukhin I.S. Study of electrical properties of single GaN nanowires grown by molecular beam epitaxy // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012002 [SJR: 0.221]
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  31. 42. Neplokh V., Ali A., Julien F.H., Foldyna M.F., Mukhin I.S., Cirlin G.E., Harmand J.C., Gogneau N., Tchernycheva M. Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates // Materials Science in Semiconductor Processing - 2016, Vol. 55, pp. 72-78 [IF: 2.264, SJR: 0.633]
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  32. 41. Reznik R.R., Kotlyar K., Ilkiv I., Soshnikov I., Kukushkin S.A., Osipov A.V., Nikitina E., Cirlin G. MBE Growth and Optical Properties of GaN Nanowires on SiC/Si(111) Hybrid Substrate // AIP Conference Proceedings - 2016, Vol. 1748, pp. 040003 [SJR: 0.182]
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  33. 40. Reznik R.R., Kotlyar K.P., Ilkiv I.V., Kukushkin S.A., Osipov A.V., Soshnikov I.P., Nikitina E.V., Cirlin G.E. MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate // International Conference Laser Optics, LO 2016 - 2016, pp. R92
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  34. 39. Reznik R.R., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Kukushkin S.A., Osipov A.V., Nikitina E.V., Cirlin G.E. The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires // Journal of Physics: Conference Series - 2016, Vol. 741, No. 1, pp. 012027 [SJR: 0.221]
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  35. 38. Timofeeva M.A., Bolshakov A.P., Tovee P.D., Zeze D.A., Dubrovskii V.G., Kolosov O.V. Scanning thermal microscopy with heat conductive nanowire probes // Ultramicroscopy - 2016, Vol. 162, pp. 42-51 [IF: 2.874, SJR: 1.556]
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  36. 37. Trassoudaine A., Roche E., Bougerol C., Andre Y., Avit G., Monier G., Ramdani M.R., Gil E., Castelluci D., Dubrovskii V.G. Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy // Journal of Crystal Growth - 2016, Vol. 454, pp. 1-5 [IF: 1.462, SJR: 0.515]
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  37. 36. Vukajlovic-Plestina J., Dubrovskii V.G., Tutuncuoglu G., Potts H., Ricca R., Meyer F., Matteini F., Leran J., Morral A. Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III–Vs on Si // Nanotechnology - 2016, Vol. 27, No. 45, pp. 455601 [IF: 3.44, SJR: 1.056]
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  38. 35. Zhukov A.E., Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kaliteevski M.A., Ivanov K.A., Kryzhanovskaya N.V., Maximov M.V., Alferov Z.I. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range // Semiconductors - 2016, Vol. 50, No. 5, pp. 662-666 [IF: 0.602, SJR: 0.308]
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  39. 34. Ameruddin A.S., Caroff P., Tan H., Jagadish C., Dubrovskii V.G. Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires // Nanoscale - 2015, Vol. 7, No. 39, pp. 16266-16272 [IF: 7.367, SJR: 2.396]
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  40. 33. Berdnikov I.S., Sibirev N.V., Dubrovskii V.G., Kang J.H. Self-limiting growth and bimodal size distribution of Au nanoislands on InAs(111)B surface // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012012 [SJR: 0.221]
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  41. 32. Dubrovskii V.G. Fully analytical description for the composition of ternary vapor-liquid-solid nanowires // Crystal Growth & Design - 2015, Vol. 15, No. 12, pp. 5738-5743 [IF: 4.055, SJR: 1.046]
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  42. 31. Dubrovskii V.G. Model of selective growth of III–V nanowires // Technical Physics Letters - 2015, Vol. 41, No. 12, pp. 1136-1138 [IF: 0.771, SJR: 0.396]
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  43. 30. Dubrovskii V.G. Mono- and polynucleation, atomistic growth, and crystal phase of III-V nanowires under varying group v flow // Journal of Chemical Physics - 2015, Vol. 142, No. 20, pp. 204702 [IF: 2.965, SJR: 1.159]
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  44. 29. Dubrovskii V.G. Self-consistent renormalization in the theory of binary nucleation in ternary solutions // Technical Physics Letters - 2015, Vol. 41, No. 9, pp. 915-918 [IF: 0.771, SJR: 0.396]
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  45. 28. Dubrovskii V.G. The theory of nucleation and polytypism of III–V semiconductor nanowires // Technical Physics Letters - 2015, Vol. 41, No. 2, pp. 203-207 [IF: 0.771, SJR: 0.396]
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  46. 27. Dubrovskii V.G., Berdnikov Y.S. Natural scaling of size distributions in homogeneous and heterogeneous rate equations with size-linear capture rates // Journal of Chemical Physics - 2015, Vol. 142, No. 12, pp. 124110 [IF: 2.965, SJR: 1.159]
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  47. 26. Dubrovskii V.G., Berdnikov Y.S., Sokolova Z.V. Scaling size distribution functions of heterogeneous clusters in a linear capture coefficient model // Technical Physics Letters - 2015, Vol. 41, No. 3, pp. 242-245 [IF: 0.771, SJR: 0.396]
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  48. 25. Dubrovskii V.G., Grecenkov J. Zeldovich Nucleation Rate, Self-Consistency Renormalization, and Crystal Phase of Au-Catalyzed GaAs Nanowires // Crystal Growth & Design - 2015, Vol. 15, No. 1, pp. 340-347 [IF: 4.055, SJR: 1.046]
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  49. 24. Dubrovskii V.G., Sibirev N.V. Analytic scaling function for island-size distributions // Physical Review E - 2015, Vol. 91, No. 4, pp. 042408 [IF: 2.366, SJR: 0.992]
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  50. 23. Dubrovskii V.G., Sokolova Z.V. Scale invariance of continuum size distribution upon irreversible growth of surface islands // Technical Physics Letters - 2015, Vol. 41, No. 6, pp. 526-528 [IF: 0.771, SJR: 0.396]
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  51. 22. Dubrovskii V.G., Timofeeva M.A., Kelrich A., Ritter D. Growth and morphological modeling of InP nanowires obtained by Au-catalyzed selective area MOMBE // Journal of Crystal Growth - 2015, Vol. 413, pp. 25-30 [IF: 1.462, SJR: 0.515]
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  52. 21. Dubrovskii V.G., Xu T., Alvarez A.D., Plissard S.R., Caroff P., Glas F., Grandidier B. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires // Nano Letters - 2015, Vol. 15, No. 8, pp. 5580-5584 [IF: 12.712, SJR: 6.211]
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  53. 20. Gomes U.P., Ercolani D., Sibirev N. V. ., Gemmi M., Dubrovskii V.G., Beltram F., Sorba L. Catalyst-free growth of InAs nanowires on Si (111) by CBE // Nanotechnology - 2015, Vol. 26, No. 41, pp. 415604 [IF: 3.44, SJR: 1.056]
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  54. 19. Grecenkov J., Dubrovskii V.G. Modelling polytypism in III-V nanowires: role of group V and nucleation patterns during the growth // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012017 [SJR: 0.221]
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  55. 18. Kelrich A., Dubrovskii V.G., Calahorra Y., Cohen S., Ritter D. Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE // Nanotechnology - 2015, Vol. 26, No. 8, pp. 085303 [IF: 3.44, SJR: 1.056]
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  56. 17. Matteini F., Dubrovskii V.G., Ruffer D., Tutuncuoglu G., Fontana Y., Morral A.F. Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon // Nanotechnology - 2015, Vol. 26, No. 10, pp. 105603 [IF: 3.44, SJR: 1.056]
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  57. 16. Mukhin I.S., Fadeev I.V., Zhukov M.V., Dubrovskii V.G., Golubok A.O. Framed carbon nanostructures: Synthesis and applications in functional SPM tips // Ultramicroscopy - 2015, Vol. 148, pp. 151-157 [IF: 2.874, SJR: 1.556]
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  58. 15. Reznik R.R., Котляр К.П., Khrebtov A.I., Samsonenko Y.B., Сошников И.П., Дьяконов В., Задиранов Ю., Танкелевская Е.М., Кудряшов Д.А., Шевчук Д., Cirlin G.E. Development of methods for orderly growth of nanowires // Journal of Physics: Conference Series - 2015, Vol. 661, No. 1, pp. 1-6 [SJR: 0.221]
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  59. 14. Robson M.T., Dubrovskii V.G., Lapierre R.R. Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates // Nanotechnology - 2015, Vol. 26, No. 46, pp. 465301 [IF: 3.44, SJR: 1.056]
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  60. 13. Rozhavskaya M.M., Lundin W.V., Lundina E.Y., Davydov V.Y., Troshkov S.I., Vasilyev A.A., Brunkov P.N., Tsatsulnikov A.F., Dubrovskii V.G. Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film // Journal of Applied Physics - 2015, Vol. 117, No. 2, pp. 024301 [IF: 2.068, SJR: 0.746]
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  61. 12. Rozhavskaya M.M., Lundin W.V., Troshkov S.I., Tsatsulnikov A.F., Dubrovskii V.G. Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling // Physica Status Solidi (A) Applications and Materials Science - 2015, Vol. 212, No. 4, pp. 851-854 [IF: 1.775, SJR: 0.545]
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  62. 11. Sibirev N.V., Koriakin A.A., Zeze D., Dubrovskii V.G. Modeling of axial heterostructure formation in ternary III-V nanowires // Journal of Physics: Conference Series - 2015, Vol. 643, pp. 012007 [SJR: 0.221]
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  63. 10. Sibirev N.V., Koryakin A.A. . The influence of liquid drop shape on crystalline structure of nanowires // Technical Physics Letters - 2015, Vol. 41, No. 12, pp. 1189-1191 [IF: 0.771, SJR: 0.396]
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  64. 9. Bourauleuv A.D., Sibirev N.V., Gilstein E.P., Brunkov P.N., Mukhin I.S., Tchernycheva M., Khrebtov A.I., Samsonenko Y.B., Cirlin G.E. Study of the electrical properties of individual (Ga, Mn)As nanowires // Semiconductors - 2014, Vol. 48, No. 3, pp. 344-349 [IF: 0.602, SJR: 0.308]
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  65. 8. Dubrovskii V.G., Berdnikov Y.S. Size distributions and scaling in heterogeneous nucleation with size-linear rate constants // Физика и механика материалов = Materials Physics and Mechanics - 2014, Vol. 21, No. 3, pp. 207-221 [SJR: 0.214]
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  66. 7. Dubrovskii V.G., Grecenkov J. Recipes for crystal phase design in Au-catalyzed III-V nanowires // Journal of Physics: Conference Series - 2014, Vol. 541, No. 1, pp. 012001 [SJR: 0.221]
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  67. 6. Periwal P., Sibirev N.V., Patriarche G., Salem B., Bassani F., Dubrovskii V.G., Baron T. Composition-dependent interfacial abruptness in Au-catalyzed Si1–xGex/Si/Si1–xGex nanowire heterostructures // Nano Letters - 2014, Vol. 14, No. 9, pp. 5140–5147 [IF: 12.712, SJR: 6.211]
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  68. 5. Trukhin V.N., Bourauleuv A.D., Dhaka V.D., Cirlin G.E., Mustafin I., Kaliteevski M.A., Lipsanen H.K., Samsonenko Y.B. Ultrafast carrier dynamics in GaAs Nanowires // Lithuanian Journal of Physics - 2014, Vol. 54, No. 1, pp. 41-45 [IF: 0.537, SJR: 0.253]
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  69. 4. Blokhin S.A., Nadtochiy A.M., Krasivichev A.A., Karachinsky L.Y., Vasil'Ev A.P., Nevedomskiy V.N., Maximov M.V., Cirlin G.E., Buravlev A.D., Maleev N.A., Ledentsov N.N., Ustinov V.M., Zhukov A.E. Optical anisotropy of InGaAs quantum dots // Semiconductors - 2013, Vol. 47, No. 1, pp. 85-89 [IF: 0.602, SJR: 0.308]
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  70. 3. Bouravleuv A.D., Cirlin G.E., Sapega V.F., Werner P.E., Savin A., Lipsanen H.K. Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy // Journal of Applied Physics - 2013, Vol. 113, No. 14, pp. 144303 [IF: 2.068, SJR: 0.746]
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  71. 2. Soshnikov I.P., Petrov V.A., Cirlin G.E., Samsonenko Y.B., Bourauleuv A.D., Zadiranov Y.M., Il'Inskaya N.D., Troshkov S.I. Growth specifics of GaAs nanowires in mesa // Physics of the solid state - 2013, Vol. 55, No. 4, pp. 702-706 [IF: 0.86, SJR: 0.364]
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  72. 1. Trukhin V.N., Buyskikh A.S., Kaliteevskaya N.A., Buravlev A.D., Samoylov L.L., Samsonenko Y.B., Cirlin G.E., Kaliteevski M.A., Gallant A.J. Terahertz generation by GaAs nanowires // Applied Physics Letters - 2013, Vol. 103, No. 7, pp. 072108 [IF: 3.411, SJR: 1.331]
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